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Vishay Siliconix |
MOSFET N-CH 40V 50MA TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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封装: TO-206AA, TO-18-3 Metal Can |
库存3,536 |
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Vishay Siliconix |
MOSFET N-CH 55V 30A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存205,056 |
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Vishay Siliconix |
MOSFET P-CH 20V 7.5A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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封装: PowerPAK? 1212-8 |
库存14,640 |
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Vishay Siliconix |
MOSFET P-CH 12V 3.6A 2X2 4-MFP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.47W (Ta)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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封装: 4-XFBGA, CSPBGA |
库存86,880 |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存433,476 |
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Vishay Siliconix |
MOSFET N-CH 40V 200A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存3,120 |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存115,200 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存61,260 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存40,692 |
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Vishay Siliconix |
MOSFET N-CH 100V 16.9A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,408 |
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Vishay Siliconix |
MOSFET N-CH 60V 115MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存2,528 |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存16,680 |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存22,260 |
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Vishay Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存85,296 |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存223,404 |
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Vishay Siliconix |
MOSFET P-CH 30V 6.4A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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封装: PowerPAK? 1212-8 |
库存361,008 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,048 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 6-TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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封装: SOT-23-6 Thin, TSOT-23-6 |
库存616,800 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.8A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
- Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W, 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存21,024 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 60A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
- Power - Max: 46W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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封装: PowerPAK? SO-8 Dual |
库存7,712 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 16A PWRPAIR
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A, 40A
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
- Power - Max: 22.7W, 100W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-PowerPair?
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封装: 8-WDFN Exposed Pad |
库存5,888 |
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Vishay Siliconix |
IC REG LINEAR 4.6V 150MA TSC75-6
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 4.6V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
- Control Features: Enable, Power Good
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? TSC-75-6
- Supplier Device Package: PowerPAK? TSC75-6
|
封装: PowerPAK? TSC-75-6 |
库存4,528 |
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Vishay Siliconix |
IC REG LINEAR 2.85V 150MA SC70-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 2.85V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
- Control Features: Enable, Power Good
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-70-5
|
封装: 5-TSSOP, SC-70-5, SOT-353 |
库存5,760 |
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Vishay Siliconix |
IC REG LINEAR 2.8V 150MA SC70-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
- Control Features: Enable
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-70-5
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封装: 5-TSSOP, SC-70-5, SOT-353 |
库存675,552 |
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Vishay Siliconix |
IC REG FLYBACK FWRD ISO 16SOIC
- Function: Step-Up/Step-Down
- Output Configuration: Positive, Isolation Capable
- Topology: Flyback, Forward Converter
- Output Type: -
- Number of Outputs: 1
- Voltage - Input (Min): 10V
- Voltage - Input (Max): 120V
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Frequency - Switching: 40kHz ~ 1MHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
封装: 16-SOIC (0.295", 7.50mm Width) |
库存5,952 |
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Vishay Siliconix |
IC ANALOG SWITCH DUAL SPST 14DIP
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: -
- Number of Circuits: -
- On-State Resistance (Max): -
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): -
- Current - Leakage (IS(off)) (Max): -
- Crosstalk: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存4,176 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-DIP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 35 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 105ns, 80ns
- -3db Bandwidth: -
- Charge Injection: 22pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -88dB @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
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封装: 16-CDIP (0.300", 7.62mm) |
库存5,760 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-TSSOP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 26 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 50ns, 30ns
- -3db Bandwidth: -
- Charge Injection: 6.6pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -114dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存6,656 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 25 V
- Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 300ns, 200ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存85,548 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT LV SC70-6
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 1
- On-State Resistance (Max): 12 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 2.25 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 11ns, 7ns
- -3db Bandwidth: -
- Charge Injection: 10pC
- Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -70dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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封装: 6-TSSOP, SC-88, SOT-363 |
库存1,158,840 |
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