存储器

MT29F256G08CMEDBJ5-12:D TR

Micron Technology Inc.

IC FLASH 256GBIT 83MHZ 132TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

SST25PF080B-80-4C-S2AE

Microchip Technology

IC FLASH 8MBIT 80MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 8Mb (1M x 8)
• Memory Interface: SPI
• Clock Frequency: 80MHz
• Write Cycle Time - Word, Page: 10µs
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

MT47H128M8CF-3:H

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 450ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-FBGA (8x10)

封装: 60-TFBGA

IDT71V416VS12PHG

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

IDT71T75702S75PFI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 7.5NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

CY7C1318BV18-278BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 278MHZ 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, DDR II
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 278MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

IS45S32400B-7TLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

M28W640FST70ZA6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-TBGA (10x13)

封装: 64-TBGA

AT49F002NT-70PC

Microchip Technology

IC FLASH 2MBIT 70NS 32DIP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 2Mb (256K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 50µs
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TC)
• Mounting Type: Through Hole
• Package / Case: 32-DIP (0.600", 15.24mm)
• Supplier Device Package: 32-DIP

封装: 32-DIP (0.600", 15.24mm)

AT27C1024-55PC

Microchip Technology

IC OTP 1MBIT 55NS 40DIP

• Memory Type: Non-Volatile
• Memory Format: EPROM
• Technology: EPROM - OTP
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TC)
• Mounting Type: Through Hole
• Package / Case: 40-DIP (0.600", 15.24mm)
• Supplier Device Package: 40-PDIP

封装: 40-DIP (0.600", 15.24mm)

AT49F512-70JC

Microchip Technology

IC FLASH 512KBIT 70NS 32PLCC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 512Kb (64K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 50µs
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 32-LCC (J-Lead)
• Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

MT49H32M18CSJ-25E IT:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 400MHZ 144FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (32M x 18)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 15ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FBGA (18.5x11)

封装: 144-TFBGA

70V9279L7PRF

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 7.5NS 128TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Synchronous
• Memory Size: 512Kb (32K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

封装: 128-LQFP

71V67603S150PFG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 150MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

71V65703S80BG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8NS 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

IS45S16320F-7TLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

MT41K64M16TW-107 AAT:J

Micron Technology Inc.

IC DDR3 SDRAM 1GBIT 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (8x14)

封装: 96-TFBGA

IS62WV25616BLL-55BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 48MINIBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-miniBGA (6x8)

封装: 48-TFBGA

S29CD016J0MQFM113

Cypress Semiconductor Corp

NOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 16Mb (512K x 32)
• Memory Interface: Parallel
• Clock Frequency: 56MHz
• Write Cycle Time - Word, Page: 60ns
• Access Time: 54ns
• Voltage - Supply: 1.65 V ~ 2.75 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

24AA02/P

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (256 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

CY7C1518KV18-333BZXI

Cypress Semiconductor Corp

IC SRAM 72MBIT 333MHZ 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, DDR II
• Memory Size: 72Mb (4M x 18)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

FM25V20A-G

Cypress Semiconductor Corp

IC FRAM 2MBIT 40MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 2Mb (256K x 8)
• Memory Interface: SPI
• Clock Frequency: 40MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

MT53D1024M32D4DT-053 WT ES:D

Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (1G x 32)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IS45S16100H-7TLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 143MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 50-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 50-TSOP II

封装: 50-TSOP (0.400", 10.16mm Width)

MT41K128M16V89C3WC1

Micron Technology Inc.

DDR3 2G DIE 128MX16

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53D4DBBP-DC TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

71V30L55TFI8

IDT, Integrated Device Technology Inc

IC SRAM 8K PARALLEL 64TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 8Kb (1K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: 64-LQFP

CG8014AAT

Cypress Semiconductor Corp

IC SRAM MICROPOWER 44TSOP II

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

W972GG8KB-25 TR

Winbond Electronics

IC DDR2 SDRAM 2GBIT 2.5NS 60WBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-WBGA (8x12.5)

封装: 84-TFBGA

93LC56B-I/SN15KVAO

Microchip Technology

APG STANDARD

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (128 x 16)
• Memory Interface: SPI
• Clock Frequency: 3MHz
• Write Cycle Time - Word, Page: 6ms
• Access Time: -
• Voltage - Supply: 2.5V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)