存储器

S29GL01GP13TFIH20D

Cypress Semiconductor Corp

IC FLASH 1GBIT 130NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 130ns
• Access Time: 130ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP I

封装: 56-TFSOP (0.724", 18.40mm Width)

AK93C65CU

AKM Semiconductor Inc.

IC EEPROM 4KBIT 8USON

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: SPI
• Clock Frequency: 4MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: 8-USON

封装: -

MT29F64G08AEAAAC5-IT:A TR

Micron Technology Inc.

IC FLASH 64GBIT 52VLGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 52-VELGA
• Supplier Device Package: 52-VLGA (18x14)

封装: 52-VELGA

IS42SM32160C-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-LFBGA
• Supplier Device Package: 90-WBGA (8x13)

封装: 90-LFBGA

R1EX24016ASAS0I#S0

Renesas Electronics America

IC EEPROM 16KBIT 400KHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

MT45W2MW16BGB-701 IT

Micron Technology Inc.

IC PSRAM 32MBIT 70NS 54VFBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 32Mb (2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (6x8)

封装: 54-VFBGA

MT41J256M8HX-125:D

Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (9x11.5)

封装: 78-TFBGA

STK22C48-SF25I

Cypress Semiconductor Corp

IC NVSRAM 16KBIT 25NS 28SOIC

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.342", 8.69mm Width)
• Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.342", 8.69mm Width)

CY7C10211BN-10ZXC

Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

AT29BV010A-12TU

Microchip Technology

IC FLASH 1MBIT 120NS 32TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 1Mb (128K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ms
• Access Time: 120ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 32-TSOP

封装: 32-TFSOP (0.724", 18.40mm Width)

MT48LC128M4A2TG-75:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

M27C512-12F1

STMicroelectronics

IC EPROM UV 512KBIT 120NS 28CDIP

• Memory Type: Non-Volatile
• Memory Format: EPROM
• Technology: EPROM - UV
• Memory Size: 512Kb (64K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 120ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-CDIP (0.600", 15.24mm) Window
• Supplier Device Package: 28-CDIP Frit Seal with Window

封装: 28-CDIP (0.600", 15.24mm) Window

CY62148BLL-70ZI

Cypress Semiconductor Corp

IC SRAM 4MBIT 70NS 32TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (0.400", 10.16mm Width)
• Supplier Device Package: 32-TSOP II

封装: 32-SOIC (0.400", 10.16mm Width)

AT28HC256-90JI

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ms
• Access Time: 90ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 32-LCC (J-Lead)
• Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

AT24C128W-10SI

Microchip Technology

IC EEPROM 128KBIT 1MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 128Kb (16K x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: 10ms
• Access Time: 550ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

MT29E4T08CTHBBM5-3ES:B TR

Micron Technology Inc.

IC FLASH 4TBIT 333MHZ 132LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Tb (512G x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IS61QDPB451236A-400M3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 400MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, QUADP
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.4ns
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-LFBGA (15x17)

封装: 165-LBGA

IS61LF102418B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 7.5NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 117MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x20)

封装: 100-LQFP

MT29F8G16ABACAWP-IT:C

Micron Technology Inc.

IC FLASH 8GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

MT48LC4M32B2P-6A XIT:L TR

Micron Technology Inc.

IC SDRAM 128MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

7140SA100PF8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 100NS 64TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 8Kb (1K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

CY7C1061G30-10ZXI

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

24LC16B-I/MS

Microchip Technology

IC EEPROM 16KBIT 400KHZ 8MSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

FM16W08-SG

Cypress Semiconductor Corp

IC FRAM 64KBIT 70NS 28SOIC

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 130ns
• Access Time: -
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

S29GL01GT11DHB023

Cypress Semiconductor Corp

IC NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

S25FL256SDSMFB010

Cypress Semiconductor Corp

IC 256 MB FLASH MEMORY

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 80MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.295", 7.50mm Width)

VM29DL640H90WHI

Cypress Semiconductor Corp

IC MEMORY NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

W25Q256FVFJF TR

Winbond Electronics

IC FLASH MEMORY 256MB

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT35XU512ABA2G12-0AUT

Micron Technology Inc.

SERIAL NOR 512M MT35X 45NM IT

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Xccela Bus
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TPBGA

封装: 24-TBGA

MX25UW51245GXDQ00

Macronix

SERIAL NOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (6x8)

封装: 24-TBGA