晶体管 - FET，MOSFET - 单

BSS315PL6327HTSA1

Infineon Technologies

MOSFET P-CH 30V 1.5A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 11µA
• Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

BSS87E6327T

Infineon Technologies

MOSFET N-CH 240V 260MA SOT-89

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 108µA
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT89-4-2
• Package / Case: TO-243AA

封装: TO-243AA

IRFU3303

Infineon Technologies

MOSFET N-CH 30V 33A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

5LP01SP

ON Semiconductor

MOSFET P-CH 50V .07A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: 3-SPA
• Package / Case: SC-72

封装: SC-72

SI4493DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 10A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRFS750A

Fairchild/ON Semiconductor

MOSFET N-CH 400V 8.4A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 49W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FQB6N25TM

Fairchild/ON Semiconductor

MOSFET N-CH 250V 5.5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF710L

Vishay Siliconix

MOSFET N-CH 400V 2A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRFS8405TRL

Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 163W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFI830G

Vishay Siliconix

MOSFET N-CH 500V 3.1A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: TO-220-3 Full Pack, Isolated Tab

CPH3356-TL-H

ON Semiconductor

MOSFET P-CH 20V 2.5A CPH3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-CPH
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

MMBF0201NLT1G

ON Semiconductor

MOSFET N-CH 20V 300MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 225mW (Ta)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

AUIRF4905STRL

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS7734TRL7PP

Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 294W (Tc)
• Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

STFW1N105K3

STMicroelectronics

MOSFET N-CH 1050V 1.4A TO3PF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1050V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 11 Ohm @ 600mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

封装: TO-3P-3 Full Pack

RCD080N25TL

Rohm Semiconductor

MOSFET N-CH 250V 8A SOT-428

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 850mW (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

CSD17507Q5A

Texas Instruments

MOSFET N-CH 30V 65A 8SON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSON (5x6)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

GPI65010DF56

GaNPower

GANFET N-CH 650V 10A DFN 5X6

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Drive Voltage (Max Rds On, Min Rds On): 6V
• Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
• Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V
• Vgs (Max): +7.5V, -12V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

封装: -

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2SJ210-0-T1B-A

Renesas Electronics Corporation

P-CHANNEL SMALL SIGNAL MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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IXTQ50N28T

IXYS

MOSFET N-CH TO3P

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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NC1M120C12HTNG

NextGen Components

SiC MOSFET N 1200V 12mohm 214A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.5V @ 40mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V
• Vgs (Max): +20V, -5V
• FET Feature: -
• Power Dissipation (Max): 938W (Ta)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

封装: -

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FDB8860-F085

onsemi

MOSFET N-CH 30V 80A TO263AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12585 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 254W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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PJP60R290E_T0_00001

Panjit International Inc.

600V N-CHANNEL SUPER JUNCTION MO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 184W (Tc)
• Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: -

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ISL9N327AD3ST

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Ta)
• Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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IXFH90N65X3

IXYS

MOSFET 90A 650V X3 TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.2V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXFH)
• Package / Case: TO-247-3

封装: -

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NVMFS5C460NWFT1G

onsemi

MOSFET N-CH 40V 19A/71A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: -

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SPW17N80C3FKSA1

Infineon Technologies

MOSFET N-CH 800V 17A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

封装: -

SIL3415CHE3-TP

Micro Commercial Co

MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1W (Tj)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6L
• Package / Case: SOT-23-6

封装: -

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NTD78N03R-35G

onsemi

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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DMTH10H010LPS-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W, 125W (Tc)
• Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

封装: -

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