页 49 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  49/1,401
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFH5106TRPBF
Infineon Technologies

MOSFET N-CH 60V 21A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存61,512
MOSFET (Metal Oxide)
60V
21A (Ta), 100A (Tc)
10V
4V @ 250µA
75nC @ 10V
3090pF @ 25V
±20V
-
3.6W (Ta), 114W (Tc)
5.6 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerVDFN
MIC94031CYW
Microchip Technology

MOSFET P-CH 16V 1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存2,080
MOSFET (Metal Oxide)
16V
1A (Ta)
-
1.4V @ 250µA
-
-
-
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
-
-
-
hot SIE854DF-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 60A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.2 mOhm @ 13.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (L)
  • Package / Case: 10-PolarPAK? (L)
封装: 10-PolarPAK? (L)
库存7,488
MOSFET (Metal Oxide)
100V
60A (Tc)
10V
4.4V @ 250µA
75nC @ 10V
3100pF @ 50V
±20V
-
5.2W (Ta), 125W (Tc)
14.2 mOhm @ 13.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (L)
10-PolarPAK? (L)
FQD19N10TM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,440
MOSFET (Metal Oxide)
100V
15.6A (Tc)
10V
4V @ 250µA
25nC @ 10V
780pF @ 25V
±25V
-
2.5W (Ta), 50W (Tc)
100 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN10B08E6TC
Diodes Incorporated

MOSFET N-CH 100V 1.6A SOT23-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存5,920
MOSFET (Metal Oxide)
100V
1.6A (Ta)
4.3V, 10V
3V @ 250µA
9.2nC @ 10V
497pF @ 50V
±20V
-
1.1W (Ta)
230 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
IXTQ74N20P
IXYS

MOSFET N-CH 200V 74A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存5,360
MOSFET (Metal Oxide)
200V
74A (Tc)
10V
5V @ 250µA
107nC @ 10V
3300pF @ 25V
±20V
-
480W (Tc)
34 mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
NDT03N40ZT1G
ON Semiconductor

MOSFET N-CH 400V 0.5A SOT223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存4,352
MOSFET (Metal Oxide)
400V
500mA (Tc)
10V
4.5V @ 50µA
6.6nC @ 10V
140pF @ 50V
±30V
-
2W (Tc)
3.4 Ohm @ 600mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
PMPB43XPE,115
Nexperia USA Inc.

MOSFET P-CH 20V 5A 6DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
封装: 6-UDFN Exposed Pad
库存5,584
MOSFET (Metal Oxide)
20V
5A (Ta)
1.8V, 4.5V
900mV @ 250µA
23.4nC @ 4.5V
1550pF @ 10V
±12V
-
1.7W (Ta), 12.5W (Tc)
48 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
MCH3376-TL-W
ON Semiconductor

MOSFET P-CH 20V 1.5A MCPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 241 mOhm @ 750mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCPH
  • Package / Case: 3-SMD, Flat Leads
封装: 3-SMD, Flat Leads
库存7,536
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1.4V @ 1mA
1.7nC @ 4.5V
120pF @ 10V
±10V
-
800mW (Ta)
241 mOhm @ 750mA, 4.5V
150°C (TJ)
Surface Mount
3-MCPH
3-SMD, Flat Leads
TSM3446CX6 RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存3,536
MOSFET (Metal Oxide)
20V
5.3A (Tc)
2.5V, 4.5V
1V @ 250µA
8.8nC @ 4.5V
700pF @ 10V
±12V
-
2W (Ta)
33 mOhm @ 5.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
hot RE1J002YNTCL
Rohm Semiconductor

MOSFET N-CH 1.2V DRIVE EMT3FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3F (SOT-416FL)
  • Package / Case: SC-89, SOT-490
封装: SC-89, SOT-490
库存5,952
MOSFET (Metal Oxide)
50V
200mA (Ta)
0.9V, 4.5V
800mV @ 1mA
-
26pF @ 10V
±8V
-
150mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
TK290A60Y,S4X
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR TO-220SIS PD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,656
MOSFET (Metal Oxide)
600V
11.5A (Tc)
10V
4V @ 450µA
25nC @ 10V
730pF @ 300V
±30V
-
35W (Tc)
290 mOhm @ 5.8A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
hot IRFRC20TRLPBF
Vishay Siliconix

MOSFET N-CH 600V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,744
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4V @ 250µA
18nC @ 10V
350pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
4.4 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
SIS468DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 30A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存3,584
MOSFET (Metal Oxide)
80V
30A (Tc)
4.5V, 10V
3V @ 250µA
28nC @ 10V
780pF @ 40V
±20V
-
3.7W (Ta), 52W (Tc)
19.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
TK28A65W,S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: TO-220-3 Full Pack, Isolated Tab
库存7,260
MOSFET (Metal Oxide)
650V
27.6A (Ta)
10V
3.5V @ 1.6mA
75nC @ 10V
3000pF @ 300V
±30V
-
45W (Tc)
110 mOhm @ 13.8A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack, Isolated Tab
STW18N60M2
STMicroelectronics

MOSFET N-CH 600V 13A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封装: TO-247-3
库存16,800
MOSFET (Metal Oxide)
600V
13A (Tc)
10V
4V @ 250µA
21.5nC @ 10V
791pF @ 100V
±25V
-
110W (Tc)
280 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
SIHH14N65E-T1-GE3
Vishay Siliconix

MOSFET N-CH 650V 15A PWRPAK 8X8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 8 x 8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存28,260
MOSFET (Metal Oxide)
650V
15A (Tc)
10V
4V @ 250µA
96nC @ 10V
1712pF @ 100V
±30V
-
156W (Tc)
260 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 8 x 8
8-PowerTDFN
RSJ800N06TL
Rohm Semiconductor

MOSFET N-CH 60V 80A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
封装: SC-83
库存16,290
MOSFET (Metal Oxide)
60V
80A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
LPTS
SC-83
PJC7407_R1_00001
Panjit International Inc.

SOT-323, MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封装: -
库存111,798
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
1.8V, 4.5V
1.2V @ 250µA
5.4 nC @ 4.5 V
416 pF @ 10 V
±12V
-
350mW (Ta)
125mOhm @ 1.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
AOM060V75X2Q
Alpha & Omega Semiconductor Inc.

750V SILICON CARBIDE MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 103W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
Request a Quote
SiCFET (Silicon Carbide)
750 V
29A (Tc)
15V
3.5V @ 6mA
39.4 nC @ 15 V
1165 pF @ 400 V
+15V, -5V
-
103W (Tc)
80mOhm @ 6A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
NP82N055KHE-E1-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI2310A-TP
Micro Commercial Co

N-CHANNEL MOSFET,SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存10,869
MOSFET (Metal Oxide)
60 V
3A
4.5V, 10V
1.5V @ 250µA
6 nC @ 4.5 V
247 pF @ 30 V
±20V
-
1.2W
105mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
UPA2520T1H-T1-AT
Renesas Electronics Corporation

MOSFET N-CH 30V 10A 8VSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 13.2mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSOF
  • Package / Case: 8-SMD, Flat Lead
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
10A (Ta)
-
2.5V @ 1mA
10.8 nC @ 5 V
1100 pF @ 15 V
-
-
1W (Ta)
13.2mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-VSOF
8-SMD, Flat Lead
SQ3426AEEV-T1_BE3
Vishay Siliconix

MOSFET N-CH 60V 7A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
库存8,949
MOSFET (Metal Oxide)
60 V
7A (Tc)
4.5V, 10V
2.5V @ 250µA
14 nC @ 10 V
1100 pF @ 30 V
±20V
-
5W (Tc)
42mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
IPB65R420CFDATMA1
Infineon Technologies

MOSFET N-CH 650V 8.7A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
8.7A (Tc)
10V
4.5V @ 340µA
32 nC @ 10 V
870 pF @ 100 V
±20V
-
83.3W (Tc)
420mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFP245
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
250 V
14A (Tc)
10V
4V @ 250µA
59 nC @ 10 V
1300 pF @ 25 V
±20V
-
150W (Tc)
340mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
SQJ401EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 12V 32A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
库存1,092
MOSFET (Metal Oxide)
12 V
32A (Tc)
2.5V, 4.5V
1.5V @ 250µA
164 nC @ 4.5 V
10015 pF @ 6 V
±8V
-
83W (Tc)
6mOhm @ 15A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IXFP28N60X3
IXYS

DISCRETE MOSFET 28A 600V X3 TO22

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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-
-
-
-
-
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-
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-
-
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-
RJK0701DPP-E0-T2
Renesas Electronics Corporation

MOSFET N-CH 75V 100A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
75 V
100A (Ta)
-
-
140 nC @ 10 V
10000 pF @ 10 V
-
-
30W (Tc)
3.8mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPB80N07S405ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
80A (Tc)
-
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-
-
-
-
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-
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