页 483 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  483/1,401
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封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot AOD4158P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 13A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存83,640
MOSFET (Metal Oxide)
30V
13A (Ta), 46A (Tc)
4.5V, 10V
2.4V @ 250µA
18nC @ 10V
1500pF @ 15V
±20V
-
2.5W (Ta), 32W (Tc)
9 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
H7N1002LSTL-E
Renesas Electronics America

MOSFET N-CH 100V LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 37.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
封装: SC-83
库存2,832
MOSFET (Metal Oxide)
100V
75A (Ta)
4.5V, 10V
-
155nC @ 10V
9700pF @ 10V
±20V
-
100W (Tc)
10 mOhm @ 37.5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RSS105N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 10.5A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,944
MOSFET (Metal Oxide)
30V
10.5A (Ta)
4V, 10V
2.5V @ 1mA
15nC @ 5V
1130pF @ 10V
20V
-
2W (Ta)
11.7 mOhm @ 10.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
IXFC14N60P
IXYS

MOSFET N-CH 600V 8A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
封装: ISOPLUS220?
库存5,824
MOSFET (Metal Oxide)
600V
8A (Tc)
10V
5.5V @ 2.5mA
36nC @ 10V
2500pF @ 25V
±30V
-
125W (Tc)
630 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
hot ISL9N303AP3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 215W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存16,080
MOSFET (Metal Oxide)
30V
75A (Tc)
4.5V, 10V
3V @ 250µA
172nC @ 10V
7000pF @ 15V
±20V
-
215W (Tc)
3.2 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
ZXM41N10FTC
Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存7,792
MOSFET (Metal Oxide)
100V
170mA (Ta)
3V, 4.5V
1.5V @ 1mA
-
25pF @ 25V
±40V
-
360mW (Ta)
8 Ohm @ 150mA, 4.5V
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot IRF9510S
Vishay Siliconix

MOSFET P-CH 100V 4A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存390,000
MOSFET (Metal Oxide)
100V
4A (Tc)
10V
4V @ 250µA
8.7nC @ 10V
200pF @ 25V
±20V
-
3.7W (Ta), 43W (Tc)
1.2 Ohm @ 2.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF200S234
Infineon Technologies

TRENCH_MOSFETS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存2,144
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IRL1404STRLPBF
Infineon Technologies

MOSFET N-CH 40V 160A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存180,000
MOSFET (Metal Oxide)
40V
160A (Tc)
4.3V, 10V
3V @ 250µA
140nC @ 5V
6600pF @ 25V
±20V
-
3.8W (Ta), 200W (Tc)
4 mOhm @ 95A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK725R0-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 75A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,872
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 1mA
60nC @ 10V
3820pF @ 25V
±20V
-
157W (Tc)
5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STF16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存392,544
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
5V @ 250µA
45nC @ 10V
1250pF @ 100V
±25V
-
25W (Tc)
299 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STI175N4F6AG
STMicroelectronics

MOSFET N-CH 40V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7735pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK (TO-262)
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存7,888
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
4.5V @ 250µA
130nC @ 10V
7735pF @ 20V
±20V
-
190W (Tc)
2.7 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK (TO-262)
TO-262-3 Long Leads, I2Pak, TO-262AA
hot BSZ060NE2LS
Infineon Technologies

MOSFET N-CH 25V 12A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存327,732
MOSFET (Metal Oxide)
25V
12A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
9.1nC @ 10V
670pF @ 12V
±20V
-
2.1W (Ta), 26W (Tc)
6 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IXTT3N200P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2000V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存5,936
MOSFET (Metal Oxide)
2000V
3A (Tc)
10V
5V @ 250µA
70nC @ 10V
1860pF @ 25V
±20V
-
520W (Tc)
8 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
STL51N3LLH5
STMicroelectronics

MOSFET N-CH 30V 51A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V
  • Vgs (Max): ±22V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
封装: 8-PowerSMD, Flat Leads
库存5,360
MOSFET (Metal Oxide)
30V
51A (Tc)
4.5V, 10V
2.5V @ 250µA
5nC @ 4.5V
724pF @ 25V
±22V
-
62.5W (Tc)
14.5 mOhm @ 6.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
hot RZF020P01TL
Rohm Semiconductor

MOSFET P-CH 12V 2A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
封装: 3-SMD, Flat Leads
库存542,364
MOSFET (Metal Oxide)
12V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
6.5nC @ 4.5V
770pF @ 6V
±10V
-
800mW (Ta)
105 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot STP110N55F6
STMicroelectronics

MOSFET N CH 55V 110A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存828,564
MOSFET (Metal Oxide)
55V
110A (Tc)
10V
4V @ 250µA
120nC @ 10V
8350pF @ 25V
±20V
-
150W (Tc)
5.2 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
R6007KNX
Rohm Semiconductor

MOSFET N-CH 600V 7A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存15,336
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
5V @ 1mA
14.5nC @ 10V
470pF @ 25V
±20V
Schottky Diode (Isolated)
46W (Tc)
620 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
hot RSM002P03T2L
Rohm Semiconductor

MOSFET P-CH 30V 200MA VMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
封装: SOT-723
库存151,320
MOSFET (Metal Oxide)
30V
200mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
150mW (Ta)
1.4 Ohm @ 200mA, 10V
150°C (TJ)
Surface Mount
VMT3
SOT-723
DMT10H9M9LCT
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO220AB T

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
101A (Tc)
4.5V, 10V
2.5V @ 250µA
40.2 nC @ 10 V
2309 pF @ 50 V
±20V
-
2.3W (Ta), 156W (Tc)
8.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
AOWF10N60C
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262F
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
4.5V @ 250µA
40 nC @ 10 V
1600 pF @ 25 V
±30V
-
28W (Tc)
750mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262F
TO-262-3 Long Leads, I2PAK, TO-262AA
UPA2718GR-E1-AT
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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NTMFS4C822NAT1G
onsemi

TRENCH 6 30V NCH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
30A (Ta), 136A (Tc)
4.5V, 10V
2.2V @ 250µA
45.2 nC @ 10 V
3071 pF @ 15 V
±20V
-
3.1W (Ta), 64W (Tc)
1.7mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
FDN339AN-NL-ML
MOSLEADER

N-Channel 20V 3A SOT-23-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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NTPF150N65S3HF
onsemi

MOSFET N-CH 650V 24A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 540µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 540µA
43 nC @ 10 V
1985 pF @ 400 V
±30V
-
192W (Tc)
150mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IRLB3034PBFXKMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
195A (Tc)
4.5V, 10V
2.5V @ 250µA
162 nC @ 4.5 V
10315 pF @ 25 V
±20V
-
375W (Tc)
1.7mOhm @ 195A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
STW12N170K5
STMicroelectronics

MOSFET N-CH 1700V 5A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
1700 V
5A (Tc)
10V
5V @ 100µA
37 nC @ 10 V
1380 pF @ 100 V
±30V
-
250W (Tc)
2.9Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
BSS123T-HF
Comchip Technology

MOSFET N-CH 100V 0.19A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5.6Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
2.5V @ 250µA
2.8 nC @ 10 V
39 pF @ 25 V
±20V
-
300mW (Ta)
5.6Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
NVD5867NLT4G
onsemi

MOSFET N-CH 60V 6A/22A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
6A (Ta), 22A (Tc)
4.5V, 10V
2.5V @ 250µA
15 nC @ 10 V
675 pF @ 25 V
±20V
-
3.3W (Ta), 43W (Tc)
39mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
RLP03N06CLE
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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