页 481 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  481/1,401
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF1902GTRPBF
Infineon Technologies

MOSFET N-CH 20V 4.2A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存158,328
MOSFET (Metal Oxide)
20V
4.2A (Ta)
-
700mV @ 250µA
7.5nC @ 4.5V
310pF @ 15V
-
-
-
85 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRFR2905ZTRL
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存62,388
MOSFET (Metal Oxide)
55V
42A (Tc)
10V
4V @ 250µA
44nC @ 10V
1380pF @ 25V
±20V
-
110W (Tc)
14.5 mOhm @ 36A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SPB80N03S2L-06
Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存60,000
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 80µA
68nC @ 10V
2530pF @ 25V
±20V
-
150W (Tc)
5.9 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2N6766T1
Microsemi Corporation

MOSFET N-CH 200V TO-254AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
封装: TO-254-3, TO-254AA (Straight Leads)
库存2,608
MOSFET (Metal Oxide)
200V
30A (Tc)
10V
4V @ 250µA
115nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
90 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-254AA
TO-254-3, TO-254AA (Straight Leads)
IXTF250N075T
IXYS

MOSFET N-CH 75V 140A ISOPLUS I4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS i4-PAC?
  • Package / Case: i4-Pac?-5
封装: i4-Pac?-5
库存3,376
MOSFET (Metal Oxide)
75V
140A (Tc)
10V
4V @ 250µA
200nC @ 10V
9900pF @ 25V
±20V
-
200W (Tc)
4.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
ISOPLUS i4-PAC?
i4-Pac?-5
HUFA75329P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 49A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,120
MOSFET (Metal Oxide)
55V
49A (Tc)
10V
4V @ 250µA
75nC @ 20V
1060pF @ 25V
±20V
-
128W (Tc)
24 mOhm @ 49A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFU3710ZPBF
Infineon Technologies

MOSFET N-CH 100V 42A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存5,856
MOSFET (Metal Oxide)
100V
42A (Tc)
10V
4V @ 250µA
100nC @ 10V
2930pF @ 25V
±20V
-
140W (Tc)
18 mOhm @ 33A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
BSC0501NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 29A 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存2,144
MOSFET (Metal Oxide)
30V
29A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
33nC @ 10V
2200pF @ 15V
±20V
Schottky Diode (Body)
2.5W (Ta), 50W (Tc)
1.9 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
hot AOT412
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 60A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存131,640
MOSFET (Metal Oxide)
100V
8.2A (Ta), 60A (Tc)
7V, 10V
3.8V @ 250µA
54nC @ 10V
3220pF @ 50V
±25V
-
2.6W (Ta), 150W (Tc)
15.8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
CSD13302W
Texas Instruments

MOSFET N-CH 12V 1.6A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 862pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 17.1 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DSBGA
  • Package / Case: 4-UFBGA, DSBGA
封装: 4-UFBGA, DSBGA
库存3,632
MOSFET (Metal Oxide)
12V
1.6A (Ta)
2.5V, 4.5V
1.3V @ 250µA
7.8nC @ 4.5V
862pF @ 6V
±10V
-
1.8W (Ta)
17.1 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-DSBGA
4-UFBGA, DSBGA
DMTH10H010LCT
Diodes Incorporated

MOSFET 100V 108A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2592pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存6,912
MOSFET (Metal Oxide)
100V
108A (Tc)
10V
3.5V @ 250µA
53.7nC @ 10V
2592pF @ 50V
±20V
-
2.4W (Ta), 166W (Tc)
9.5 mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQP16N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 16A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存18,060
MOSFET (Metal Oxide)
250V
16A (Tc)
10V
5V @ 250µA
35nC @ 10V
1200pF @ 25V
±30V
-
142W (Tc)
230 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IRF8304MTRPBF
Infineon Technologies

MOSFET N-CH 30V 28A MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封装: DirectFET? Isometric MX
库存3,536
MOSFET (Metal Oxide)
30V
28A (Ta), 170A (Tc)
4.5V, 10V
2.35V @ 100µA
42nC @ 4.5V
4700pF @ 15V
±20V
-
2.8W (Ta), 100W (Tc)
2.2 mOhm @ 28A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
hot IRF6217TRPBF
Infineon Technologies

MOSFET P-CH 150V 0.7A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存53,052
MOSFET (Metal Oxide)
150V
700mA (Ta)
10V
5V @ 250µA
9nC @ 10V
150pF @ 25V
±20V
-
2.5W (Ta)
2.4 Ohm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TPN1R603PL,L1Q
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 10V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存3,152
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
10V @ 10µA
41nC @ 10V
3900pF @ 15V
±20V
-
104W (Tc)
1.2 mOhm @ 80A, 10V
175°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
STL23NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 92A PWRFLAT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存2,384
MOSFET (Metal Oxide)
30V
92A (Tc)
4.5V, 10V
2.3V @ 1mA
13.7nC @ 4.5V
2100pF @ 15V
±20V
-
2.9W (Ta), 50W (Tc)
3.7 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
NVR4003NT3G
ON Semiconductor

MOSFET N-CH 30V SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 690mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存3,520
MOSFET (Metal Oxide)
30V
500mA (Ta)
2.5V, 4V
1.4V @ 250µA
1.15nC @ 5V
21pF @ 5V
±20V
-
690mW (Ta)
1.5 Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23 (TO-236AB)
TO-236-3, SC-59, SOT-23-3
TPH4R606NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 32A 8-SOP ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存46,470
MOSFET (Metal Oxide)
60V
32A (Ta)
6.5V, 10V
4V @ 500µA
49nC @ 10V
3965pF @ 30V
±20V
-
1.6W (Ta), 63W (Tc)
4.6 mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
AOTF42S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 39A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2154pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存18,936
MOSFET (Metal Oxide)
600V
39A (Tc)
10V
3.8V @ 250µA
40nC @ 10V
2154pF @ 100V
±30V
-
37.9W (Tc)
99 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
hot STF12N65M2
STMicroelectronics

MOSFET N-CH 650V 8A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存5,648
MOSFET (Metal Oxide)
650V
8A (Tc)
10V
4V @ 250µA
16.5nC @ 10V
535pF @ 100V
±25V
-
25W (Tc)
500 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot ZXMN2A01FTA
Diodes Incorporated

MOSFET N-CH 20V 1.9A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存3,260,748
MOSFET (Metal Oxide)
20V
1.9A (Ta)
2.5V, 4.5V
700mV @ 250µA
3nC @ 4.5V
303pF @ 15V
±12V
-
625mW (Ta)
120 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IRFI630BTU
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262 (I2PAK)
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
9A (Tc)
10V
4V @ 250µA
29 nC @ 10 V
720 pF @ 25 V
±30V
-
3.13W (Ta), 72W (Tc)
400mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
DMPH4013SK3Q-13
Diodes Incorporated

MOSFET P-CH 40V 55A TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存13,503
MOSFET (Metal Oxide)
40 V
55A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
4004 pF @ 20 V
±20V
-
2.1W (Ta)
15mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
FDBL86361-F085AW
onsemi

MOSFET N-CH 80V 300A 8HPSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 429W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HPSOF
  • Package / Case: 8-PowerSFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
80 V
300A (Tc)
10V
4V @ 250µA
188 nC @ 10 V
12800 pF @ 40 V
±20V
-
429W (Tj)
1.4mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-HPSOF
8-PowerSFN
NXV65UPR
Nexperia USA Inc.

NXV65UP/SOT23/TO-236AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存151,395
MOSFET (Metal Oxide)
20 V
2.1A (Ta)
1.8V, 4.5V
1V @ 250µA
8.7 nC @ 4.5 V
458 pF @ 10 V
±8V
-
340mW (Ta), 2.1W (Tc)
70mOhm @ 2.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
FQB46N15TM
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
150 V
45.6A (Tc)
10V
4V @ 250µA
110 nC @ 10 V
3250 pF @ 25 V
±25V
-
3.75W (Ta), 210W (Tc)
42mOhm @ 22.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDS4435BZ-F085
onsemi

MOSFET P-CH 30V 8.8A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
8.8A (Ta)
4.5V, 10V
3V @ 250µA
40 nC @ 10 V
1845 pF @ 15 V
±25V
-
2.5W (Ta)
20mOhm @ 8.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
UF3C065040T3S
Qorvo

MOSFET N-CH 650V 54A TO220-3

  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 326W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: -
库存1,050
-
650 V
54A (Tc)
12V
6V @ 10mA
51 nC @ 15 V
1500 pF @ 100 V
±25V
-
326W (Tc)
52mOhm @ 40A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TPCP8107-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 8A PS-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8
  • Package / Case: 8-SMD, Flat Lead
封装: -
库存11,598
MOSFET (Metal Oxide)
40 V
8A (Ta)
6V, 10V
3V @ 1mA
44.6 nC @ 10 V
2160 pF @ 10 V
+10V, -20V
-
1W (Ta)
18mOhm @ 4A, 10V
175°C
Surface Mount
PS-8
8-SMD, Flat Lead
GT130N10F
Goford Semiconductor

MOSFET N-CH 100V 45A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
45A (Tc)
10V
4V @ 250µA
18 nC @ 10 V
1215 pF @ 50 V
±20V
-
41.7W (Tc)
12mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack