晶体管 - FET，MOSFET - 单

BUZ73L

Infineon Technologies

MOSFET N-CH 200V 7A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

IXFJ40N30Q

IXYS

MOSFET N-CH TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-268
• Package / Case: TO-220-3, Short Tab

封装: TO-220-3, Short Tab

NTLUS3A90PZCTAG

ON Semiconductor

MOSFET P-CH 20V 4A UDFN6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 600mW (Ta)
• Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFN (1.6x1.6)
• Package / Case: 6-PowerUFDFN

封装: 6-PowerUFDFN

JANTXV2N6758

Microsemi Corporation

MOSFET N-CH 200V 9A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 75W (Tc)
• Rds On (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-204AA (TO-3)
• Package / Case: TO-204AA, TO-3

封装: TO-204AA, TO-3

AO4588

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

AOT8N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: TO-220-3

NTB6448ANG

ON Semiconductor

MOSFET N-CH 100V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB70N12S3L12ATMA1

Infineon Technologies

MOSFET N-CHANNEL_100+

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IXFT12N90Q

IXYS

MOSFET N-CH 900V 12A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

NTMFS5C404NLTWFT3G

ON Semiconductor

MOSFET N-CH 40V 352A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

HAT2169H-EL-E

Renesas Electronics America

MOSFET N-CH 40V 50A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6650pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封装: SC-100, SOT-669

AOT20C60L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 463W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: TO-220-3

FCPF190N60_F152

Fairchild/ON Semiconductor

MOSFET N-CH 600V 20.2A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F-3
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

NVMFS5C450NT1G

ON Semiconductor

MOSFET N-CH 40V SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 65µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

TK8S06K3L(T6L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 8A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 54 mOhm @ 4A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AOTF7N65

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 7A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 38.5W (Tc)
• Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

AO4286

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 4A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BUK9E08-55B,127

Nexperia USA Inc.

MOSFET N-CH 55V 75A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 203W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRLML0100TRPBF

Infineon Technologies

MOSFET N-CH 100V 1.6A SOT-23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3?/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IXFN170N25X3

IXYS

MOSFET N-CH 250V 170A SOT227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 390W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

STP9N60M2

STMicroelectronics

MOSFET N-CH 600V 5.5A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 780 mOhm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: TO-220-3

PHP33NQ20T,127

Nexperia USA Inc.

MOSFET N-CH 200V 32.7A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 32.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 77 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

PMCM6501VPEZ

Nexperia USA Inc.

MOSFET P-CH 12V 6WLCSP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WLCSP (1.48x.98)
• Package / Case: 6-XFBGA, WLCSP

封装: 6-XFBGA, WLCSP

DMTH4005SPSQ-13

Diodes Incorporated

MOSFET N-CH POWERDI5060-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20.9A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

SI4134DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 14A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

STB7N52K3

STMicroelectronics

MOSFET N-CH 525V 6.2A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 737pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLZ14SPBF

Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7205TRPBF

Infineon Technologies

MOSFET P-CH 30V 4.6A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

DMN3067LW-7

Diodes Incorporated

MOSFET N-CH 30V 2.6A SOT-323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

IXFN180N15P

IXYS

MOSFET N-CH 150V 150A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 680W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC