图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 150V 33A TO-262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,344 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | ±30V | - | 3.8W (Ta), 170W (Tc) | 56 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
|
封装: TO-261-4, TO-261AA |
库存6,912 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 10V | 4V @ 1mA | - | 550pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220
|
封装: Super-220?-3 (Straight Leads) |
库存6,960 |
|
MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 7660pF @ 25V | ±16V | - | 300W (Tc) | 4 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220? (TO-273AA) | Super-220?-3 (Straight Leads) |
||
NXP |
MOSFET N-CH 55V 2.5A SOT223
|
封装: TO-261-4, TO-261AA |
库存2,832 |
|
MOSFET (Metal Oxide) | 55V | 2.5A (Ta) | 5V | 2V @ 1mA | 4.5nC @ 5V | 330pF @ 25V | ±13V | - | 1.8W (Ta), 8.3W (Tc) | 150 mOhm @ 5A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 20V 12A PPAK CHIPFET
|
封装: 8-PowerVDFN |
库存7,024 |
|
MOSFET (Metal Oxide) | 20V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 1200pF @ 10V | ±20V | - | 3.1W (Ta), 31W (Tc) | 10 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerPak? ChipFet (3x1.9) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 60V 150MA TO-92
|
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
库存6,032 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±20V | - | 400mW (Ta) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
ON Semiconductor |
MOSFET N-CH 200V 32A TO-247
|
封装: TO-247-3 |
库存3,744 |
|
MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 5000pF @ 25V | ±20V | - | 180W (Tc) | 75 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,664 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | ±20V | - | 3.7W (Ta), 88W (Tc) | 160 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 7A TO-220
|
封装: TO-220-3 |
库存264,000 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 560pF @ 50V | ±30V | - | 70W (Tc) | 700 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
STMicroelectronics |
MOSFET P-CH 60V 2A SOT23-6
|
封装: SOT-23-6 |
库存868,992 |
|
MOSFET (Metal Oxide) | 60V | 2A (Tc) | 4.5V, 10V | 1V @ 250µA | 7nC @ 10V | 313pF @ 25V | ±15V | - | 1.6W (Tc) | 250 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
|
封装: TO-220-3 |
库存5,792 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | ±20V | - | 330W (Tc) | 4.7 mOhm @ 104A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 8.7A TO247
|
封装: TO-247-3 |
库存6,624 |
|
MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存17,088 |
|
MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4460pF @ 25V | ±20V | - | 350W (Tc) | 15 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,432 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 2.2V @ 340µA | 234nC @ 10V | 15000pF @ 25V | ±16V | - | 136W (Tc) | 3.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,992 |
|
MOSFET (Metal Oxide) | 40V | 85A (Tc) | 10V | 4V @ 150µA | 89nC @ 10V | 6085pF @ 25V | ±20V | - | 88W (Tc) | 7.3 mOhm @ 85A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Renesas Electronics America |
MOSFET P-CH 60V 20A TO-220
|
封装: TO-220-3 Isolated Tab |
库存11,088 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 10V | - | 38nC @ 10V | 1900pF @ 10V | ±20V | - | 2W (Ta), 25W (Tc) | 48 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 7.5A TO-220SIS
|
封装: TO-220-3 Full Pack |
库存3,568 |
|
MOSFET (Metal Oxide) | 450V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Texas Instruments |
N-CHANNEL NEXFET POWER MOSFET
|
封装: 8-PowerTDFN |
库存6,096 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 16nC @ 4.5V | 2640pF @ 20V | ±20V | - | 3.1W (Ta), 120W (Tc) | 4.3 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 69A SO8FL
|
封装: - |
库存5,328 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
ON Semiconductor |
MOSFET N-CH 30V 8.9A 8WDFN
|
封装: 8-PowerWDFN |
库存16,560 |
|
MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 52A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 28nC @ 10V | 1979pF @ 15V | ±20V | - | 850mW (Ta), 29.8W (Tc) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
PT8P 20V/8V SINGLE SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,104 |
|
MOSFET (Metal Oxide) | 20V | 1.15A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 1220pF @ 10V | ±8V | - | 1.6W (Ta) | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
N-CHANNEL 600 V, 0.310 OHM TYP.,
|
封装: TO-220-3 Full Pack |
库存19,980 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 19nC @ 10V | 730pF @ 100V | ±25V | - | 25W (Tc) | 365 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 55V DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存155,952 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 35nC @ 10V | 2453pF @ 25V | ±20V | - | 167W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P-CH 30V 14.5A POWERDI
|
封装: 8-PowerTDFN |
库存23,940 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 126.2nC @ 10V | 6234pF @ 15V | ±20V | - | 2.18W (Ta) | 7.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 120A TO-220-3
|
封装: TO-220-3 |
库存13,644 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.5V @ 250µA | 268nC @ 10V | 20930pF @ 30V | ±20V | - | 333W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 12A PPAK CHIPFET
|
封装: 8-PowerVDFN |
库存47,250 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 32nC @ 10V | 1100pF @ 30V | ±20V | - | 3.1W (Ta), 31W (Tc) | 34 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerPak? ChipFet (3x1.9) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 2A SOT-223
|
封装: TO-261-4, TO-261AA |
库存409,608 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 5V @ 250µA | 6nC @ 10V | 225pF @ 25V | ±30V | - | 2W (Tc) | 3.4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
EPC |
TRANS GAN 200V 22A BUMPED DIE
|
封装: Die |
库存109,092 |
|
GaNFET (Gallium Nitride) | 200V | 22A (Ta) | 5V | 2.5V @ 3mA | 5.3nC @ 5V | 540pF @ 100V | +6V, -4V | - | - | 25 mOhm @ 12A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (7-Solder Bar) | Die |
||
Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存73,560 |
|
MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 17nC @ 5V | 950pF @ 25V | ±20V | - | 600mW (Ta) | 470 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET P-CH 20V 12A SC-70
|
封装: PowerPAK? SC-70-6 |
库存191,076 |
|
MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 62nC @ 8V | 1750pF @ 10V | ±8V | - | 3.5W (Ta), 19W (Tc) | 20.5 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |