晶体管 - FET，MOSFET - 单

AOWF12T60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO262F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262F
• Package / Case: TO-262-3 Full Pack, I2Pak

封装: TO-262-3 Full Pack, I2Pak

SI4362BDY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 29A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
• Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 19.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IXFC60N20

IXYS

MOSFET N-CH 200V 60A ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

封装: ISOPLUS220?

STI90N4F3

STMicroelectronics

MOSFET N-CH 40V 80A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRF3315STRL

Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT30M85BVRG

Microsemi Corporation

MOSFET N-CH 300V 40A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

封装: TO-247-3

AOB280L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 20.5A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11135pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AO4423

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 17A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3033pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

FDMS9411_F085

Fairchild/ON Semiconductor

MOSFET N-CH 40V 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68.2W (Tj)
• Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Power56
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

STF5N105K5

STMicroelectronics

MOSFET N-CH 1050V 3A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1050V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

TSM2N60ECH C5G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 362pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52.1W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251 (IPAK)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

FCPF380N60_F152

Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.2A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F-3
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

PSMN4R3-100ES,127

Nexperia USA Inc.

MOSFET N-CH 100V 120A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 338W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

STP14NK50Z

STMicroelectronics

MOSFET N-CH 500V 14A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

STFI15N65M5

STMicroelectronics

MOSFET N CH 650V 11A I2PAKFP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAKFP (TO-281)
• Package / Case: TO-262-3 Full Pack, I2Pak

封装: TO-262-3 Full Pack, I2Pak

BUK9635-55A,118

Nexperia USA Inc.

MOSFET N-CH 55V 34A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1173pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 85W (Tc)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RSD100N10TL

Rohm Semiconductor

MOSFET N-CH 100V 10A CPT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 133 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SI2305CHE3-TP

Micro Commercial Co

MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8 V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W
• Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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DI022P06D1

Diotec Semiconductor

IC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2098 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 43W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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DMTH10H009SPS-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

封装: -

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IXFN70N100X

IXYS

MOSFET N-CH 1000V 56A SOT227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1200W (Tc)
• Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: -

NTBGS004N10G

onsemi

POWER MOSFET 203 AMPS, 100 VOLTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 203A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 340W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封装: -

FDMC6696P

onsemi

FDMC6696 - P-CHANNEL POWERTRENCH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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APT20M45SVRG

Microchip Technology

MOSFET N-CH 200V 56A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D3PAK
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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UPA2521T1H-T1-AT

Renesas Electronics Corporation

MOSFET N-CH 30V 8A 8VSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSOF
• Package / Case: 8-SMD, Flat Lead

封装: -

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RSJ400N06FRATL

Rohm Semiconductor

MOSFET N-CH 60V 40A LPTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Ta)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

DMT4011LSS-13

Diodes Incorporated

MOSFET N-CH 40V 10.8A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 829 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.31W (Ta)
• Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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PXN011-100QSJ

Nexperia USA Inc.

N-CHANNEL 100 V, 11 MOHM, STANDA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 56A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 66W
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: MLPAK33
• Package / Case: 8-PowerVDFN

封装: -

NTLJS4D7N03HTAG

onsemi

MOSFET N-CH 25V 11.6A 6PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 860mW (Ta)
• Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-PQFN (2x2)
• Package / Case: 6-PowerWDFN

封装: -

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UJ3C120040K3S

Qorvo

SICFET N-CH 1200V 65A TO247-3

• FET Type: N-Channel
• Technology: SiCFET (Cascode SiCJFET)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V
• Vgs(th) (Max) @ Id: 6V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 429W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

封装: -