页 150 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EPC2101ENG	EPC	TRANS GAN 2N-CH 60V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存4,704	GaNFET (Gallium Nitride)	60V	9.5A, 38A	11.5 mOhm @ 20A, 5V	2.5V @ 2mA	2.7nC @ 5V	300pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
ZXMP3F37DN8TA	Diodes Incorporated	MOSFET 2P-CH 30V 5.7A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存466,992	Logic Level Gate	30V	5.7A	25 mOhm @ 7.1A, 10V	3V @ 250µA	31.6nC @ 10V	1678pF @ 15V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1563EDH-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存653,172	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	1nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI4622DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V Power - Max: 3.3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,216	Standard	30V	8A	16 mOhm @ 9.6A, 10V	2.5V @ 1mA	60nC @ 10V	2458pF @ 15V	3.3W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRFH4257DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 25A 24PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V Power - Max: 25W, 28W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: Dual PQFN (5x4)	封装: 8-PowerVDFN	库存5,872	Logic Level Gate	25V	25A	3.4 mOhm @ 25A, 10V	2.1V @ 35µA	15nC @ 4.5V	1321pF @ 13V	25W, 28W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	Dual PQFN (5x4)
APTM20AM06SG	Microsemi Corporation	MOSFET 2N-CH 200V 300A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存7,696	Standard	200V	300A	7.2 mOhm @ 150A, 10V	5V @ 6mA	325nC @ 10V	18500pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC60HM70SCTG	Microsemi Corporation	MOSFET 4N-CH 600V 39A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存3,552	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
STS5DP3LLH6	STMicroelectronics	MOSFET ARRAY 2P-CH 30V 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Power - Max: 2.7W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,640	Logic Level Gate, 4.5V Drive	30V	5A (Ta)	56 mOhm @ 2.5A, 10V	2.5V @ 250µA	6nC @ 4.5V	639pF @ 25V	2.7W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7216DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 6A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Power - Max: 20.8W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存27,180	Standard	40V	6A	32 mOhm @ 5A, 10V	3V @ 250µA	19nC @ 10V	670pF @ 20V	20.8W	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI3585DV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 2A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存658,140	Logic Level Gate	20V	2A, 1.5A	125 mOhm @ 2.4A, 4.5V	600mV @ 250µA (Min)	3.2nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
ALD1105PBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14DIP FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	封装: 14-DIP (0.300", 7.62mm)	库存16,332	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
FDMS7600AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/22A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 22A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: 8-PowerWDFN	库存366,120	Logic Level Gate	30V	12A, 22A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
STL40DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 40A POWERFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封装: 8-PowerVDFN	库存6,848	Standard	30V	40A	18 mOhm @ 5.5A, 10V	1.5V @ 250µA	4.5nC @ 4.5V	475pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
SI6926ADQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存438,120	Logic Level Gate	20V	4.1A	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	10.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SSM6N15AFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A 2-2J1C FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存3,280	Logic Level Gate	30V	100mA	3.6 Ohm @ 10mA, 4V	1.5V @ 100µA	-	13.5pF @ 3V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
FTCO3V455A1	Fairchild/ON Semiconductor	MOSFET 6N-CH 40V 150A MODULE FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 1.66 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 115W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: 19-PowerDIP Module Supplier Device Package: Module	封装: 19-PowerDIP Module	库存7,896	Logic Level Gate	40V	150A	1.66 mOhm @ 80A, 10V	-	-	-	115W	175°C (TJ)	Through Hole	19-PowerDIP Module	Module
EFC4630R-TR	onsemi	MOSFET 2N-CH 24V 6A EFCP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: EFCP1313-4CC-037	封装: -	Request a Quote	Logic Level Gate, 2.5V Drive	24V	6A (Ta)	45mOhm @ 3A, 4.5V	1.3V @ 1mA	7nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	4-XFBGA	EFCP1313-4CC-037
CSD87313DMS	Texas Instruments	MOSFET 2N-CH 30V 8WSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WSON (3.3x3.3)	封装: -	Request a Quote	-	30V	-	-	1.25V @ 250µA	28nC @ 4.5V	4290pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WSON (3.3x3.3)
UPA2451BTL-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 8.2A 6HWSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 700mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: 6-HWSON	封装: -	Request a Quote	Logic Level Gate	30V	8.2A	20mOhm @ 4A, 4.5V	1.5V @ 1mA	9.2nC @ 4V	540pF @ 10V	700mW	-	Surface Mount	6-VFDFN Exposed Pad	6-HWSON
IPG20N06S4L11ATMA2	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: -	库存128,976	Logic Level Gate	60V	20A (Tc)	11.2mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
DMN2041UVT-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	库存3,144	-	20V	5.8A (Ta)	28mOhm @ 8.2A, 4.5V	900mV @ 250µA	9.1nC @ 4.5V	689pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NTMFD0D9N02P1E	onsemi	MOSFET 2N-CH 30V/25V 14A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V Power - Max: 960mW (Ta), 1.04W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	封装: -	Request a Quote	-	30V, 25V	14A (Ta), 30A (Ta)	3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V	2V @ 340µA, 2V @ 1mA	9nC @ 4.5V, 30nC @ 4.5V	1400pF @ 15V, 5050pF @ 13V	960mW (Ta), 1.04W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
CAB760M12HM3R	Wolfspeed, Inc.	SIC 2N-CH 1200V 1.015KA MODUL FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote	-	1200V (1.2kV)	1.015kA (Tc)	1.73mOhm @ 760A, 15V	3.6V @ 280mA	2724nC @ 15V	79400pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
CPH6602-TL-E	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN3401LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FF6MR12W2M1B70BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY2B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	封装: -	Request a Quote	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY2B
DMN3401LDW-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存27,798	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMPH6050SPDWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UX)	封装: -	Request a Quote	-	60V	6.3A (Ta), 26A (Tc)	48mOhm @ 5A, 10V	3V @ 250µA	30.6nC @ 10V	1525pF @ 30V	1.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type UX)
DMN2053UFDB-7	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	7.7nC @ 10V	369pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
AO8801A_001	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: -	Request a Quote	-	20V	4.5A (Ta)	42mOhm @ 4.5A, 4.5V	900mV @ 250µA	11nC @ 4.5V	905pF @ 10V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

EPC2101ENG

EPC

TRANS GAN 2N-CH 60V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存4,704

GaNFET (Gallium Nitride)

60V

9.5A, 38A

11.5 mOhm @ 20A, 5V

2.5V @ 2mA

2.7nC @ 5V

300pF @ 30V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

ZXMP3F37DN8TA

Diodes Incorporated

MOSFET 2P-CH 30V 5.7A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存466,992

Logic Level Gate

30V

5.7A

25 mOhm @ 7.1A, 10V

3V @ 250µA

31.6nC @ 10V

1678pF @ 15V

1.81W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1563EDH-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存653,172

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

1nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI4622DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Power - Max: 3.3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,216

Standard

30V

8A

16 mOhm @ 9.6A, 10V

2.5V @ 1mA

60nC @ 10V

2458pF @ 15V

3.3W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRFH4257DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 25A 24PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
Power - Max: 25W, 28W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: Dual PQFN (5x4)

封装: 8-PowerVDFN

库存5,872

Logic Level Gate

25V

25A

3.4 mOhm @ 25A, 10V

2.1V @ 35µA

15nC @ 4.5V

1321pF @ 13V

25W, 28W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

Dual PQFN (5x4)

APTM20AM06SG

Microsemi Corporation

MOSFET 2N-CH 200V 300A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存7,696

Standard

200V

300A

7.2 mOhm @ 150A, 10V

5V @ 6mA

325nC @ 10V

18500pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC60HM70SCTG

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存3,552

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

STS5DP3LLH6

STMicroelectronics

MOSFET ARRAY 2P-CH 30V 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
Power - Max: 2.7W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,640

Logic Level Gate, 4.5V Drive

30V

5A (Ta)

56 mOhm @ 2.5A, 10V

2.5V @ 250µA

6nC @ 4.5V

639pF @ 25V

2.7W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7216DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 6A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Power - Max: 20.8W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存27,180

Standard

40V

6A

32 mOhm @ 5A, 10V

3V @ 250µA

19nC @ 10V

670pF @ 20V

20.8W

-50°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI3585DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 2A 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存658,140

Logic Level Gate

20V

2A, 1.5A

125 mOhm @ 2.4A, 4.5V

600mV @ 250µA (Min)

3.2nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

ALD1105PBL

Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14DIP

FET Type: 2 N and 2 P-Channel Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm)

库存16,332

Standard

10.6V

-

500 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

14-PDIP

FDMS7600AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/22A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 22A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: 8-PowerWDFN

库存366,120

Logic Level Gate

30V

12A, 22A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

STL40DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 40A POWERFLAT56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封装: 8-PowerVDFN

库存6,848

Standard

30V

40A

18 mOhm @ 5.5A, 10V

1.5V @ 250µA

4.5nC @ 4.5V

475pF @ 25V

60W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

SI6926ADQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存438,120

Logic Level Gate

20V

4.1A

30 mOhm @ 4.5A, 4.5V

1V @ 250µA

10.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SSM6N15AFU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A 2-2J1C

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存3,280

Logic Level Gate

30V

100mA

3.6 Ohm @ 10mA, 4V

1.5V @ 100µA

-

13.5pF @ 3V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

FTCO3V455A1

Fairchild/ON Semiconductor

MOSFET 6N-CH 40V 150A MODULE

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 1.66 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 115W
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-PowerDIP Module
Supplier Device Package: Module

封装: 19-PowerDIP Module

库存7,896

Logic Level Gate

40V

150A

1.66 mOhm @ 80A, 10V

-

115W

175°C (TJ)

Through Hole

19-PowerDIP Module

Module

EFC4630R-TR

onsemi

MOSFET 2N-CH 24V 6A EFCP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Supplier Device Package: EFCP1313-4CC-037

封装: -

Request a Quote

Logic Level Gate, 2.5V Drive

24V

6A (Ta)

45mOhm @ 3A, 4.5V

1.3V @ 1mA

7nC @ 4.5V

-

1.6W

150°C (TJ)

Surface Mount

4-XFBGA

EFCP1313-4CC-037

CSD87313DMS

Texas Instruments

MOSFET 2N-CH 30V 8WSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WSON (3.3x3.3)

封装: -

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-

30V

-

1.25V @ 250µA

28nC @ 4.5V

4290pF @ 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WSON (3.3x3.3)

UPA2451BTL-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 30V 8.2A 6HWSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Power - Max: 700mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: 6-HWSON

封装: -

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Logic Level Gate

30V

8.2A

20mOhm @ 4A, 4.5V

1.5V @ 1mA

9.2nC @ 4V

540pF @ 10V

700mW

-

Surface Mount

6-VFDFN Exposed Pad

6-HWSON

IPG20N06S4L11ATMA2

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: -

库存128,976

Logic Level Gate

60V

20A (Tc)

11.2mOhm @ 17A, 10V

2.2V @ 28µA

53nC @ 10V

4020pF @ 25V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

DMN2041UVT-7

Diodes Incorporated

MOSFET 2N-CH 20V 5.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

库存3,144

-

20V

5.8A (Ta)

28mOhm @ 8.2A, 4.5V

900mV @ 250µA

9.1nC @ 4.5V

689pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NTMFD0D9N02P1E

onsemi

MOSFET 2N-CH 30V/25V 14A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Power - Max: 960mW (Ta), 1.04W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

封装: -

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-

30V, 25V

14A (Ta), 30A (Ta)

3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V

2V @ 340µA, 2V @ 1mA

9nC @ 4.5V, 30nC @ 4.5V

1400pF @ 15V, 5050pF @ 13V

960mW (Ta), 1.04W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

CAB760M12HM3R

Wolfspeed, Inc.

SIC 2N-CH 1200V 1.015KA MODUL

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

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-

1200V (1.2kV)

1.015kA (Tc)

1.73mOhm @ 760A, 15V

3.6V @ 280mA

2724nC @ 15V

79400pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

CPH6602-TL-E

onsemi

NCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMN3401LDWQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FF6MR12W2M1B70BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY2B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2B

封装: -

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-

1200V (1.2kV)

200A (Tj)

5.63mOhm @ 200A, 15V

5.55V @ 80mA

496nC @ 15V

14700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY2B

DMN3401LDW-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存27,798

-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMPH6050SPDWQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UX)

封装: -

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-

60V

6.3A (Ta), 26A (Tc)

48mOhm @ 5A, 10V

3V @ 250µA

30.6nC @ 10V

1525pF @ 30V

1.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type UX)

DMN2053UFDB-7

Diodes Incorporated

MOSFET 2N-CH 20V 4.6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

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-

20V

4.6A (Ta)

35mOhm @ 5A, 4.5V

1V @ 250µA

7.7nC @ 10V

369pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

AO8801A_001

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: -

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-

20V

4.5A (Ta)

42mOhm @ 4.5A, 4.5V

900mV @ 250µA

11nC @ 4.5V

905pF @ 10V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP