页 15 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSD840N L6327	Infineon Technologies	MOSFET 2N-CH 20V 0.88A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V Vgs(th) (Max) @ Id: 750mV @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存7,312	Logic Level Gate	20V	880mA	400 mOhm @ 880mA, 2.5V	750mV @ 1.6µA	0.26nC @ 2.5V	78pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
AO8822#A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,360	Logic Level Gate	20V	7A	18 mOhm @ 7A, 10V	1V @ 250µA	18nC @ 10V	780pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI7948DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 3A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存2,880	Logic Level Gate	60V	3A	75 mOhm @ 4.6A, 10V	3V @ 250µA	20nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMC25D0UVT-13	Diodes Incorporated	MOSFET N/P-CH 25V/30V TSOT26 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V, 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: SOT-23-6 Thin, TSOT-23-6	库存2,464	Standard	25V, 30V	400mA, 3.2A	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.7nC @ 8V	26.2pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
FDMD8530	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 35A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: 8-PowerWDFN	库存4,976	Standard	30V	35A	1.25 mOhm @ 35A, 10V	3V @ 250µA	149nC @ 10V	10395pF @ 15V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
STS4DPF20L	STMicroelectronics	MOSFET 2P-CH 20V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存108,144	Logic Level Gate	20V	4A	80 mOhm @ 2A, 10V	2.5V @ 250µA	16nC @ 5V	1350pF @ 25V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRL6297SDTRPBF	Infineon Technologies	MOSFET 2N-CH 20V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 10V Power - Max: 1.7W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric SA Supplier Device Package: DIRECTFET? SA	封装: DirectFET? Isometric SA	库存2,784	Logic Level Gate	20V	15A	4.9 mOhm @ 15A, 4.5V	1.1V @ 35µA	54nC @ 10V	2245pF @ 10V	1.7W	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric SA	DIRECTFET? SA
FDMS8095AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 150V 6.2A/1A PWR56 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6.2A, 1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 75V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: 8-PowerWDFN	库存6,080	Standard	150V	6.2A, 1A	30 mOhm @ 6.2A, 10V	4V @ 250µA	30nC @ 10V	2020pF @ 75V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMS3606S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/27A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 27A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封装: 8-PowerTDFN	库存15,516	Logic Level Gate	30V	13A, 27A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMC8032L	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 7A 8-MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	封装: 8-PowerWDFN	库存26,400	Logic Level Gate	40V	7A	20 mOhm @ 7A, 10V	3V @ 250µA	11nC @ 10V	720pF @ 20V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
QH8MA4TCR	Rohm Semiconductor	MOSFET N/P-CH 30V TSMT8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: 8-SMD, Flat Lead	库存2,112	Standard	30V	9A, 8A	16 mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
FDS6961A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存342,240	Logic Level Gate	30V	3.5A	90 mOhm @ 3.5A, 10V	3V @ 250µA	4nC @ 5V	220pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MTM763200LBF	Panasonic Electronic Components	MOSFET N/P-CH 20V WSMINI6-F1 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power - Max: 700mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: WSMini6-F1-B	封装: 6-SMD, Flat Leads	库存36,000	Standard	20V	1.9A, 1.2A	105 mOhm @ 1A, 4V	1.3V @ 1mA	-	280pF @ 10V	700mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	WSMini6-F1-B
AO6604	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 20V 6-TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.5A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存1,233,012	Logic Level Gate	20V	3.4A, 2.5A	60 mOhm @ 3.4A, 4.5V	1V @ 250µA	3.8nC @ 4.5V	320pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SIZ342DT-T1-GE3	Vishay Siliconix	MOSFET DL N-CH 30V POWERPAIR3X3 FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	封装: 8-PowerWDFN	库存8,592	-	30V	15.7A (Ta), 100A (Tc)	11.5 mOhm @ 14A, 10V	2.4V @ 250µA	20nC @ 10V	650pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SI4590DY-T1-GE3	Vishay Siliconix	MOSFET N/P CHAN 100V SO8 DUAL FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V Power - Max: 2.4W, 3.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存24,378	-	100V	3.4A, 2.8A	57 mOhm @ 2A, 10V	2.5V @ 250µA	11.5nC @ 10V	360pF @ 50V	2.4W, 3.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STL65DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 65A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封装: 8-PowerVDFN	库存235,368	Logic Level Gate	30V	65A	6.5 mOhm @ 9.5A, 10V	1.5V @ 250µA	12nC @ 4.5V	1500pF @ 25V	60W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
BSS84DWQ-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存8,985	-	50V	130mA (Ta)	10Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CPH5608-TL-E	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120DUM08T3AG	Microchip Technology	SIC 2N-CH 1200V 337A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V Power - Max: 1409W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1200V (1.2kV)	337A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 4mA	928nC @ 20V	12100pF @ 1000V	1409W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
SQJB46EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	Request a Quote	-	40V	30A (Tc)	8mOhm @ 8A, 10V	3.3V @ 250µA	32nC @ 10V	1800pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
UT6K30TCR	Rohm Semiconductor	MOSFET 2N-CH 60V 3A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.7V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封装: -	库存9,969	-	60V	3A (Ta)	153mOhm @ 3A, 10V	2.7V @ 50µA	2.1nC @ 10V	110pF @ 30V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
NTMFD5C446NLT1G	onsemi	MOSFET 2N-CH 40V 25A/145A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Power - Max: 3.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	40V	25A (Ta), 145A (Tc)	2.65mOhm @ 20A, 10V	2.2V @ 90µA	54nC @ 10V	3170pF @ 25V	3.5W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FF6MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 250A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V Vgs(th) (Max) @ Id: 5.15V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	封装: -	Request a Quote	-	1200V (1.2kV)	250A (Tc)	5.81mOhm @ 250A, 15V	5.15V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
MSCSM120X10CTYZBNMG	Microchip Technology	PM-MOSFET-SIC-SBD-6HPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 49A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA, 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 20V, 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 838pF @ 1000V, 1990pF @ 1000V Power - Max: 116W (Tc), 196W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	28A (Tc), 49A (Tc)	100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V	2.8V @ 1mA, 2.7V @ 2mA	64nC @ 20V, 137nC @ 20V	838pF @ 1000V, 1990pF @ 1000V	116W (Tc), 196W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
EMH2401-TL-E	onsemi	NCH+NCH 1.8 DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D0UDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.35A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power - Max: 320mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存18,000	-	60V	350mA (Ta)	2Ohm @ 100mA, 4.5V	1.1V @ 250µA	0.5nC @ 4.5V	32pF @ 30V	320mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CPH5614-TL-E-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120HM50T3AG	Microchip Technology	SIC 4N-CH 1200V 55A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 2mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
AO4822	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	-	30V	8A	19mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

BSD840N L6327

Infineon Technologies

MOSFET 2N-CH 20V 0.88A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存7,312

Logic Level Gate

20V

880mA

400 mOhm @ 880mA, 2.5V

750mV @ 1.6µA

0.26nC @ 2.5V

78pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

AO8822#A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,360

Logic Level Gate

20V

7A

18 mOhm @ 7A, 10V

1V @ 250µA

18nC @ 10V

780pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI7948DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 3A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存2,880

Logic Level Gate

60V

3A

75 mOhm @ 4.6A, 10V

3V @ 250µA

20nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMC25D0UVT-13

Diodes Incorporated

MOSFET N/P-CH 25V/30V TSOT26

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: SOT-23-6 Thin, TSOT-23-6

库存2,464

Standard

25V, 30V

400mA, 3.2A

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.7nC @ 8V

26.2pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

FDMD8530

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 35A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: 8-PowerWDFN

库存4,976

Standard

30V

35A

1.25 mOhm @ 35A, 10V

3V @ 250µA

149nC @ 10V

10395pF @ 15V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

STS4DPF20L

STMicroelectronics

MOSFET 2P-CH 20V 4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存108,144

Logic Level Gate

20V

4A

80 mOhm @ 2A, 10V

2.5V @ 250µA

16nC @ 5V

1350pF @ 25V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRL6297SDTRPBF

Infineon Technologies

MOSFET 2N-CH 20V 15A DIRECTFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 10V
Power - Max: 1.7W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric SA
Supplier Device Package: DIRECTFET? SA

封装: DirectFET? Isometric SA

库存2,784

Logic Level Gate

20V

15A

4.9 mOhm @ 15A, 4.5V

1.1V @ 35µA

54nC @ 10V

2245pF @ 10V

1.7W

-40°C ~ 150°C (TJ)

Surface Mount

DirectFET? Isometric SA

DIRECTFET? SA

FDMS8095AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 150V 6.2A/1A PWR56

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 75V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: 8-PowerWDFN

库存6,080

Standard

150V

6.2A, 1A

30 mOhm @ 6.2A, 10V

4V @ 250µA

30nC @ 10V

2020pF @ 75V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMS3606S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/27A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封装: 8-PowerTDFN

库存15,516

Logic Level Gate

30V

13A, 27A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1785pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMC8032L

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 7A 8-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

封装: 8-PowerWDFN

库存26,400

Logic Level Gate

40V

7A

20 mOhm @ 7A, 10V

3V @ 250µA

11nC @ 10V

720pF @ 20V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

QH8MA4TCR

Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: 8-SMD, Flat Lead

库存2,112

Standard

30V

9A, 8A

16 mOhm @ 9A, 10V

2.5V @ 1mA

15.5nC @ 10V

640pF @ 15V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

FDS6961A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存342,240

Logic Level Gate

30V

3.5A

90 mOhm @ 3.5A, 10V

3V @ 250µA

4nC @ 5V

220pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MTM763200LBF

Panasonic Electronic Components

MOSFET N/P-CH 20V WSMINI6-F1

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Power - Max: 700mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: WSMini6-F1-B

封装: 6-SMD, Flat Leads

库存36,000

Standard

20V

1.9A, 1.2A

105 mOhm @ 1A, 4V

1.3V @ 1mA

-

280pF @ 10V

700mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

WSMini6-F1-B

AO6604

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V 6-TSOP

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.5A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存1,233,012

Logic Level Gate

20V

3.4A, 2.5A

60 mOhm @ 3.4A, 4.5V

1V @ 250µA

3.8nC @ 4.5V

320pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SIZ342DT-T1-GE3

Vishay Siliconix

MOSFET DL N-CH 30V POWERPAIR3X3

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

封装: 8-PowerWDFN

库存8,592

-

30V

15.7A (Ta), 100A (Tc)

11.5 mOhm @ 14A, 10V

2.4V @ 250µA

20nC @ 10V

650pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SI4590DY-T1-GE3

Vishay Siliconix

MOSFET N/P CHAN 100V SO8 DUAL

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Power - Max: 2.4W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存24,378

-

100V

3.4A, 2.8A

57 mOhm @ 2A, 10V

2.5V @ 250µA

11.5nC @ 10V

360pF @ 50V

2.4W, 3.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STL65DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 65A POWERFLAT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封装: 8-PowerVDFN

库存235,368

Logic Level Gate

30V

65A

6.5 mOhm @ 9.5A, 10V

1.5V @ 250µA

12nC @ 4.5V

1500pF @ 25V

60W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

BSS84DWQ-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存8,985

-

50V

130mA (Ta)

10Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CPH5608-TL-E

onsemi

NCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MSCSM120DUM08T3AG

Microchip Technology

SIC 2N-CH 1200V 337A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Power - Max: 1409W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

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-

1200V (1.2kV)

337A (Tc)

7.8mOhm @ 80A, 20V

2.8V @ 4mA

928nC @ 20V

12100pF @ 1000V

1409W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

SQJB46EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

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-

40V

30A (Tc)

8mOhm @ 8A, 10V

3.3V @ 250µA

32nC @ 10V

1800pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

UT6K30TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 3A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封装: -

库存9,969

-

60V

3A (Ta)

153mOhm @ 3A, 10V

2.7V @ 50µA

2.1nC @ 10V

110pF @ 30V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

NTMFD5C446NLT1G

onsemi

MOSFET 2N-CH 40V 25A/145A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Power - Max: 3.5W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

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-

40V

25A (Ta), 145A (Tc)

2.65mOhm @ 20A, 10V

2.2V @ 90µA

54nC @ 10V

3170pF @ 25V

3.5W (Ta), 125W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

FF6MR12KM1PHOSA1

Infineon Technologies

SIC 2N-CH 1200V 250A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

封装: -

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-

1200V (1.2kV)

250A (Tc)

5.81mOhm @ 250A, 15V

5.15V @ 80mA

496nC @ 15V

14700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

MSCSM120X10CTYZBNMG

Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 49A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA, 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 20V, 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 838pF @ 1000V, 1990pF @ 1000V
Power - Max: 116W (Tc), 196W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

28A (Tc), 49A (Tc)

100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V

2.8V @ 1mA, 2.7V @ 2mA

64nC @ 20V, 137nC @ 20V

838pF @ 1000V, 1990pF @ 1000V

116W (Tc), 196W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

EMH2401-TL-E

onsemi

NCH+NCH 1.8 DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

DMN62D0UDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.35A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Power - Max: 320mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存18,000

-

60V

350mA (Ta)

2Ohm @ 100mA, 4.5V

1.1V @ 250µA

0.5nC @ 4.5V

32pF @ 30V

320mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CPH5614-TL-E-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MSCSM120HM50T3AG

Microchip Technology

SIC 4N-CH 1200V 55A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 2mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

AO4822

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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-

30V

8A

19mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC