页 14 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL308CL6327HTSA1	Infineon Technologies	MOSFET N/P-CH 30V 2.3A/2A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存2,864	Logic Level Gate	30V	2.3A, 2A	80 mOhm @ 2A, 10V	2V @ 11µA	500nC @ 10V	275pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF7103Q	Infineon Technologies	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存85,488	Standard	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	15nC @ 10V	255pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTJD4105CT4G	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存5,680	Logic Level Gate	20V, 8V	630mA, 775mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
FDJ1032C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 3.2A/2.8A SC75 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.8A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC75-6 FLMP Supplier Device Package: SC75-6 FLMP	封装: SC75-6 FLMP	库存47,364	Logic Level Gate	20V	3.2A, 2.8A	90 mOhm @ 3.2A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	200pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	SC75-6 FLMP	SC75-6 FLMP
FDS8934A	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存59,904	Logic Level Gate	20V	4A	55 mOhm @ 4A, 4.5V	1V @ 250µA	28nC @ 5V	1130pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM20DUM05G	Microsemi Corporation	MOSFET 2N-CH 200V 317A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存6,848	Standard	200V	317A	6 mOhm @ 158.5A, 10V	5V @ 10mA	448nC @ 10V	27400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
ALD210802PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存2,384	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SQJ992EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存3,632	Standard	60V	15A	56.2 mOhm @ 3.7A, 10V	2.5V @ 250µA	12nC @ 10V	446pF @ 30V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
EFC6612R-A-TF	ON Semiconductor	MOSFET 2N-CH 20V 23A EFCP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (1.77x3.54)	封装: 6-SMD, No Lead	库存3,040	Logic Level Gate, 2.5V Drive	-	-	-	-	27nC @ 4.5V	-	2.5W	-	Surface Mount	6-SMD, No Lead	6-CSP (1.77x3.54)
EFC6605R-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-EFCP (1.9x1.46)	封装: 6-XFBGA	库存3,008	Logic Level Gate, 2.5V Drive	-	-	-	-	19.8nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	6-XFBGA	6-EFCP (1.9x1.46)
BUK7K13-60EX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存7,888	Standard	60V	40A	10 mOhm @ 10A, 10V	4V @ 1mA	30.1nC @ 10V	2163pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
ZXMP6A18DN8TA	Diodes Incorporated	MOSFET 2P-CH 60V 3.7A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存10,608	Logic Level Gate	60V	3.7A	55 mOhm @ 3.5A, 10V	1V @ 250µA (Min)	44nC @ 10V	1580pF @ 30V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SH8K22TB1	Rohm Semiconductor	MOSFET 2N-CH 45V 4.5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存113,208	Logic Level Gate	45V	4.5A	46 mOhm @ 4.5A, 10V	2.5V @ 1mA	9.6nC @ 5V	550pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SIZ730DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	封装: 6-PowerPair?	库存90,252	Logic Level Gate	30V	16A, 35A	9.3 mOhm @ 15A, 10V	2.2V @ 250µA	24nC @ 10V	830pF @ 15V	27W, 48W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SMA5132	Sanken	MOSFET 3N/3P-CH 500V 1.5A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	封装: 12-SIP, Exposed Tab	库存7,056	Standard	500V	1.5A	-	-	-	-	-	-	Through Hole	12-SIP, Exposed Tab	12-SIP
DMG9926USD-13	Diodes Incorporated	MOSFET 2N-CH 20V 8A SOP8L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,968	Logic Level Gate	20V	8A	24 mOhm @ 8.2A, 4.5V	900mV @ 250µA	8.8nC @ 4.5V	867pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CAS120M12BM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 193A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 193A Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: Module	库存6,016	Standard	1200V (1.2kV)	193A	16 mOhm @ 120A, 20V	2.6V @ 6mA (Typ)	378nC @ 20V	6300pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
NDC7001C	Fairchild/ON Semiconductor	MOSFET N/P-CH 60V SSOT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 510mA, 340mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封装: SOT-23-6 Thin, TSOT-23-6	库存242,184	Logic Level Gate	60V	510mA, 340mA	2 Ohm @ 510mA, 10V	2.5V @ 250µA	1.5nC @ 10V	20pF @ 25V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDWS9420-F085	onsemi	MOSFET 2N-CH 40V 20A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	封装: -	Request a Quote	-	40V	20A (Tc)	5.8mOhm @ 20A, 10V	4V @ 250µA	43nC @ 10V	2100pF @ 20V	75W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)
SI4953ADY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 3.7A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	30V	3.7A	53mOhm @ 4.9A, 10V	1V @ 250µA (Min)	25nC @ 10V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTMFD5C470NLT1G	onsemi	MOSFET 2N-CH 40V 11A/36A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Power - Max: 3W (Ta), 24W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存17,139	-	40V	11A (Ta), 36A (Tc)	11.5mOhm @ 5A, 10V	2.2V @ 20µA	9nC @ 10V	590pF @ 25V	3W (Ta), 24W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMJD025N04CTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRF630A_CP001	Fairchild Semiconductor	MOSFET N-CH 200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N36TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: -	库存34,851	Logic Level Gate, 1.5V Drive	20V	500mA (Ta)	630mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SP8K33FRATB	Rohm Semiconductor	MOSFET 2N-CH 60V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存7,500	-	60V	5A (Ta)	48mOhm @ 5A, 10V	2.5V @ 1mA	12nC @ 5V	620pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NVMJD012N04CLTWG	onsemi	MOSFET N-CH 40V LFPACK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
HAT2218R-EL-E	Renesas Electronics Corporation	MOSFET 2N-CH 30V 7.5A/8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	7.5A, 8A	24mOhm @ 3.75A, 10V	-	4.6nC @ 4.5V	630pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NXH010P120MNF1PG	onsemi	SIC 2N-CH 1200V 114A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Power - Max: 250W (Tj) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
GSFQ4701	Good-Ark Semiconductor	MOSFET N/P-CH 40V 6.7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V Power - Max: 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存17,802	-	40V	6.7A (Tc), 7.2A (Tc)	32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V	2.5V @ 250µA	5.6nC @ 4.5V, 16nC @ 4.5V	800pF @ 15V, 1600pF @ 15V	2.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DF16MR12W1M1HFB67BPSA1	Infineon Technologies	MOSFET 2N-CH 1200V 25A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V Vgs(th) (Max) @ Id: 5.15V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封装: -	库存72	-	1200V (1.2kV)	25A	32.3mOhm @ 25A, 18V	5.15V @ 10mA	74nC @ 18V	2200pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-

BSL308CL6327HTSA1

Infineon Technologies

MOSFET N/P-CH 30V 2.3A/2A 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存2,864

Logic Level Gate

30V

2.3A, 2A

80 mOhm @ 2A, 10V

2V @ 11µA

500nC @ 10V

275pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF7103Q

Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存85,488

Standard

50V

3A

130 mOhm @ 3A, 10V

3V @ 250µA

15nC @ 10V

255pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTJD4105CT4G

ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存5,680

Logic Level Gate

20V, 8V

630mA, 775mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

FDJ1032C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 3.2A/2.8A SC75

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.8A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC75-6 FLMP
Supplier Device Package: SC75-6 FLMP

封装: SC75-6 FLMP

库存47,364

Logic Level Gate

20V

3.2A, 2.8A

90 mOhm @ 3.2A, 4.5V

1.5V @ 250µA

3nC @ 4.5V

200pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

SC75-6 FLMP

FDS8934A

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存59,904

Logic Level Gate

20V

4A

55 mOhm @ 4A, 4.5V

1V @ 250µA

28nC @ 5V

1130pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM20DUM05G

Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存6,848

Standard

200V

317A

6 mOhm @ 158.5A, 10V

5V @ 10mA

448nC @ 10V

27400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

ALD210802PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存2,384

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SQJ992EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存3,632

Standard

60V

15A

56.2 mOhm @ 3.7A, 10V

2.5V @ 250µA

12nC @ 10V

446pF @ 30V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

EFC6612R-A-TF

ON Semiconductor

MOSFET 2N-CH 20V 23A EFCP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-CSP (1.77x3.54)

封装: 6-SMD, No Lead

库存3,040

Logic Level Gate, 2.5V Drive

-

27nC @ 4.5V

-

2.5W

-

Surface Mount

6-SMD, No Lead

6-CSP (1.77x3.54)

EFC6605R-TR

ON Semiconductor

MOSFET 2N-CH EFCP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA
Supplier Device Package: 6-EFCP (1.9x1.46)

封装: 6-XFBGA

库存3,008

Logic Level Gate, 2.5V Drive

-

19.8nC @ 4.5V

-

1.6W

150°C (TJ)

Surface Mount

6-XFBGA

6-EFCP (1.9x1.46)

BUK7K13-60EX

Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存7,888

Standard

60V

40A

10 mOhm @ 10A, 10V

4V @ 1mA

30.1nC @ 10V

2163pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

ZXMP6A18DN8TA

Diodes Incorporated

MOSFET 2P-CH 60V 3.7A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存10,608

Logic Level Gate

60V

3.7A

55 mOhm @ 3.5A, 10V

1V @ 250µA (Min)

44nC @ 10V

1580pF @ 30V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SH8K22TB1

Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存113,208

Logic Level Gate

45V

4.5A

46 mOhm @ 4.5A, 10V

2.5V @ 1mA

9.6nC @ 5V

550pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SIZ730DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A 6-POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

封装: 6-PowerPair?

库存90,252

Logic Level Gate

30V

16A, 35A

9.3 mOhm @ 15A, 10V

2.2V @ 250µA

24nC @ 10V

830pF @ 15V

27W, 48W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SMA5132

Sanken

MOSFET 3N/3P-CH 500V 1.5A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

封装: 12-SIP, Exposed Tab

库存7,056

Standard

500V

1.5A

-

Through Hole

12-SIP, Exposed Tab

12-SIP

DMG9926USD-13

Diodes Incorporated

MOSFET 2N-CH 20V 8A SOP8L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,968

Logic Level Gate

20V

8A

24 mOhm @ 8.2A, 4.5V

900mV @ 250µA

8.8nC @ 4.5V

867pF @ 15V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CAS120M12BM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 193A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: Module

库存6,016

Standard

1200V (1.2kV)

193A

16 mOhm @ 120A, 20V

2.6V @ 6mA (Typ)

378nC @ 20V

6300pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

NDC7001C

Fairchild/ON Semiconductor

MOSFET N/P-CH 60V SSOT6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 510mA, 340mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封装: SOT-23-6 Thin, TSOT-23-6

库存242,184

Logic Level Gate

60V

510mA, 340mA

2 Ohm @ 510mA, 10V

2.5V @ 250µA

1.5nC @ 10V

20pF @ 25V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDWS9420-F085

onsemi

MOSFET 2N-CH 40V 20A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Power - Max: 75W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)

封装: -

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40V

20A (Tc)

5.8mOhm @ 20A, 10V

4V @ 250µA

43nC @ 10V

2100pF @ 20V

75W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (5x6)

SI4953ADY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

30V

3.7A

53mOhm @ 4.9A, 10V

1V @ 250µA (Min)

25nC @ 10V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTMFD5C470NLT1G

onsemi

MOSFET 2N-CH 40V 11A/36A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Power - Max: 3W (Ta), 24W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存17,139

-

40V

11A (Ta), 36A (Tc)

11.5mOhm @ 5A, 10V

2.2V @ 20µA

9nC @ 10V

590pF @ 25V

3W (Ta), 24W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

NVMJD025N04CTWG

onsemi

MOSFET N-CH 40V LFPAK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

IRF630A_CP001

Fairchild Semiconductor

MOSFET N-CH 200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SSM6N36TU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封装: -

库存34,851

Logic Level Gate, 1.5V Drive

20V

500mA (Ta)

630mOhm @ 200mA, 5V

1V @ 1mA

1.23nC @ 4V

46pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SP8K33FRATB

Rohm Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存7,500

-

60V

5A (Ta)

48mOhm @ 5A, 10V

2.5V @ 1mA

12nC @ 5V

620pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NVMJD012N04CLTWG

onsemi

MOSFET N-CH 40V LFPACK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

HAT2218R-EL-E

Renesas Electronics Corporation

MOSFET 2N-CH 30V 7.5A/8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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Logic Level Gate, 4.5V Drive

30V

7.5A, 8A

24mOhm @ 3.75A, 10V

-

4.6nC @ 4.5V

630pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NXH010P120MNF1PG

onsemi

SIC 2N-CH 1200V 114A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Power - Max: 250W (Tj)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

114A (Tc)

14mOhm @ 100A, 20V

4.3V @ 40mA

454nC @ 20V

4707pF @ 800V

250W (Tj)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

GSFQ4701

Good-Ark Semiconductor

MOSFET N/P-CH 40V 6.7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Power - Max: 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存17,802

-

40V

6.7A (Tc), 7.2A (Tc)

32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V

2.5V @ 250µA

5.6nC @ 4.5V, 16nC @ 4.5V

800pF @ 15V, 1600pF @ 15V

2.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DF16MR12W1M1HFB67BPSA1

Infineon Technologies

MOSFET 2N-CH 1200V 25A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存72

-

1200V (1.2kV)

25A

32.3mOhm @ 25A, 18V

5.15V @ 10mA

74nC @ 18V

2200pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

-