页 110 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF6156	Infineon Technologies	MOSFET 2N-CH 20V 6.5A FLIP-FET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-FlipFet? Supplier Device Package: 6-FlipFet?	封装: 6-FlipFet?	库存33,840	Logic Level Gate	20V	6.5A	40 mOhm @ 6.5A, 4.5V	1.2V @ 250µA	18nC @ 5V	950pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-FlipFet?	6-FlipFet?
SI4947ADY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,312	Logic Level Gate	30V	3A	80 mOhm @ 3.9A, 10V	1V @ 250µA (Min)	8nC @ 5V	-	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6928DQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存219,360	Logic Level Gate	30V	4A	35 mOhm @ 4A, 10V	1V @ 250µA	14nC @ 5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
GWM160-0055P3	IXYS	MOSFET 6N-CH 55V 160A ISODIL FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL? Supplier Device Package: ISOPLUS-DIL?	封装: ISOPLUS-DIL?	库存4,944	Standard	55V	160A	3 mOhm @ 100A, 10V	4V @ 1mA	90nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL?	ISOPLUS-DIL?
FDQ7698S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/15A 14SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1324pF @ 15V Power - Max: 1.1W, 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) 11 Leads, Fused Leads Supplier Device Package: 14-SO	封装: 14-SOIC (0.154", 3.90mm Width) 11 Leads, Fused Leads	库存7,104	Logic Level Gate	30V	12A, 15A	7.5 mOhm @ 15A, 10V	3V @ 250µA	17nC @ 5V	1324pF @ 15V	1.1W, 1.3W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width) 11 Leads, Fused Leads	14-SO
APTM120A15FG	Microsemi Corporation	MOSFET 2N-CH 1200V 60A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存7,808	Standard	1200V (1.2kV)	60A	175 mOhm @ 30A, 10V	5V @ 10mA	748nC @ 10V	20600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC60DSKM70T1G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存3,840	Super Junction	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	700pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD114804SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存7,152	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
EFC2J017NUZTDG	ON Semiconductor	MOSFET 2N-CH 6WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.77x3.05)	封装: 6-XFBGA, WLCSP	库存7,904	Logic Level Gate, 2.5V Drive	-	-	-	1.3V @ 1mA	95nC @ 4.5V	-	2.5W	150°C (TJ)	Surface Mount	6-XFBGA, WLCSP	6-WLCSP (1.77x3.05)
AON6980	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 18A/27A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A, 27A Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Power - Max: 3.5W, 4.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerVDFN	库存2,288	Logic Level Gate	30V	18A, 27A	6.8 mOhm @ 20A, 10V	2.2V @ 250µA	22nC @ 10V	1095pF @ 15V	3.5W, 4.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
BSS8402DWQ-7	Diodes Incorporated	MOSFET N/P-CH 60V/50V FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存4,752	Logic Level Gate	60V, 50V	115mA, 130mA	13.5 Ohm @ 500mA, 10V	2.5V @ 250µA	-	50pF @ 25V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PMGD175XNEAX	Nexperia USA Inc.	MOSFET ARRAY 2N-CH 30V SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存5,984	Standard	30V	900mA (Ta)	252 mOhm @ 900mA, 4.5V	1.25V @ 250µA	1.65nC @ 4.5V	81pF @ 15V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC4050SSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 5.3A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存149,700	Logic Level Gate	40V	5.3A	45 mOhm @ 3A, 10V	1.8V @ 250µA	37.56nC @ 10V	1790.8pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS3992	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 4.5A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,136	Standard	100V	4.5A	62 mOhm @ 4.5A, 10V	4V @ 250µA	15nC @ 10V	750pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BUK9K25-40EX	Nexperia USA Inc.	MOSFET 2N-CH 40V 18.2A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18.2A Rds On (Max) @ Id, Vgs: 24 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存22,866	Logic Level Gate	40V	18.2A	24 mOhm @ 5A, 10V	2.1V @ 1mA	6.3nC @ 5V	701pF @ 25V	32W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
NTHD4508NT1G	ON Semiconductor	MOSFET 2N-CH 20V 3A CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power - Max: 1.13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存595,740	Logic Level Gate	20V	3A	75 mOhm @ 3.1A, 4.5V	1.2V @ 250µA	4nC @ 4.5V	180pF @ 10V	1.13W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
DMN5L06VK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存6,741,552	Logic Level Gate	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2710UDWQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 0.8A SOT363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	20V	800mA (Ta)	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V	42pF @ 16V	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
LM2724MX-NOPB	National Semiconductor	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCH6630-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
KGF6N05D-400	Renesas Electronics Corporation	MOSFET 2N-CH 5.5V 12A 20WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-UFLGA, CSP Supplier Device Package: 20-WLCSP (2.48x1.17)	封装: -	Request a Quote	-	5.5V	12A (Ta)	3mOhm @ 6A, 4.5V	900mV @ 250µA	4nC @ 3.5V	630pF @ 5.5V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	20-UFLGA, CSP	20-WLCSP (2.48x1.17)
AONY36356	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 17.5A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: -	库存8,601	-	30V	17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)	6.1mOhm @ 20A, 10V	2.1V @ 250µA	20nC @ 10V	920pF @ 15V	2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
NVMFD5C446NLT1G	onsemi	MOSFET 2N-CH 40V 25A/145A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Power - Max: 3.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存3,033	-	40V	25A (Ta), 145A (Tc)	2.65mOhm @ 20A, 10V	2.2V @ 90µA	25nC @ 4.5V	3170pF @ 25V	3.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMTH10H038SPDW-13	Diodes Incorporated	MOSFET 2N-CH 100V 25A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V Power - Max: 2.7W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封装: -	Request a Quote	-	100V	25A (Tc)	33mOhm @ 10A, 10V	4V @ 250µA	8nC @ 10V	544pF @ 50V	2.7W (Ta), 39W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
PJX8802_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.7A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存11,787	-	20V	700mA (Ta)	150mOhm @ 700mA, 4.5V	1V @ 250µA	1.6nC @ 4.5V	92pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
CBB032M12FM3T	Wolfspeed, Inc.	SIC 4N-CH 1200V 39A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.9V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存150	-	1200V (1.2kV)	39A (Tj)	44mOhm @ 30A, 15V	3.9V @ 11mA	118nC @ 15V	3500pF @ 1000V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
BUK9MRR-65PKK-518	Nexperia USA Inc.	MOSFET 2N-CH 65V 4.8A 20SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 60.7mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 25V Power - Max: 3.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	封装: -	Request a Quote	Logic Level Gate	65V	4.8A (Tc)	60.7mOhm @ 3A, 10V	2V @ 1mA	8.8nC @ 5V	712pF @ 25V	3.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
UPA1759G-E1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 60V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	封装: -	Request a Quote	Logic Level Gate	60V	5A	150mOhm @ 2.5A, 10V	2.5V @ 1mA	8nC @ 10V	190pF @ 10V	2W	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
MSCSM120AM08CT3AG	Microchip Technology	SIC 2N-CH 1200V 337A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V Power - Max: 1.409kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1200V (1.2kV)	337A (Tc)	7.8mOhm @ 160A, 20V	2.8V @ 4mA	928nC @ 20V	12.08pF @ 1000V	1.409kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
DMTH45M5SPDW-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V Power - Max: 3.3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封装: -	库存6,570	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	3.5V @ 250µA	13.2nC @ 10V	1083pF @ 20V	3.3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)

IRF6156

Infineon Technologies

MOSFET 2N-CH 20V 6.5A FLIP-FET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-FlipFet?
Supplier Device Package: 6-FlipFet?

封装: 6-FlipFet?

库存33,840

Logic Level Gate

20V

6.5A

40 mOhm @ 6.5A, 4.5V

1.2V @ 250µA

18nC @ 5V

950pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-FlipFet?

SI4947ADY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,312

Logic Level Gate

30V

3A

80 mOhm @ 3.9A, 10V

1V @ 250µA (Min)

8nC @ 5V

-

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6928DQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存219,360

Logic Level Gate

30V

4A

35 mOhm @ 4A, 10V

1V @ 250µA

14nC @ 5V

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

GWM160-0055P3

IXYS

MOSFET 6N-CH 55V 160A ISODIL

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 160A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?

封装: ISOPLUS-DIL?

库存4,944

Standard

55V

160A

3 mOhm @ 100A, 10V

4V @ 1mA

90nC @ 10V

-

-40°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL?

FDQ7698S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/15A 14SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1324pF @ 15V
Power - Max: 1.1W, 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width) 11 Leads, Fused Leads
Supplier Device Package: 14-SO

封装: 14-SOIC (0.154", 3.90mm Width) 11 Leads, Fused Leads

库存7,104

Logic Level Gate

30V

12A, 15A

7.5 mOhm @ 15A, 10V

3V @ 250µA

17nC @ 5V

1324pF @ 15V

1.1W, 1.3W

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width) 11 Leads, Fused Leads

14-SO

APTM120A15FG

Microsemi Corporation

MOSFET 2N-CH 1200V 60A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存7,808

Standard

1200V (1.2kV)

60A

175 mOhm @ 30A, 10V

5V @ 10mA

748nC @ 10V

20600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC60DSKM70T1G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存3,840

Super Junction

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

700pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

ALD114804SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
Vgs(th) (Max) @ Id: 360mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存7,152

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 3.6V

360mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

EFC2J017NUZTDG

ON Semiconductor

MOSFET 2N-CH 6WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)

封装: 6-XFBGA, WLCSP

库存7,904

Logic Level Gate, 2.5V Drive

-

1.3V @ 1mA

95nC @ 4.5V

-

2.5W

150°C (TJ)

Surface Mount

6-XFBGA, WLCSP

6-WLCSP (1.77x3.05)

AON6980

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 18A/27A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A, 27A
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Power - Max: 3.5W, 4.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerVDFN

库存2,288

Logic Level Gate

30V

18A, 27A

6.8 mOhm @ 20A, 10V

2.2V @ 250µA

22nC @ 10V

1095pF @ 15V

3.5W, 4.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

BSS8402DWQ-7

Diodes Incorporated

MOSFET N/P-CH 60V/50V

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存4,752

Logic Level Gate

60V, 50V

115mA, 130mA

13.5 Ohm @ 500mA, 10V

2.5V @ 250µA

-

50pF @ 25V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PMGD175XNEAX

Nexperia USA Inc.

MOSFET ARRAY 2N-CH 30V SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存5,984

Standard

30V

900mA (Ta)

252 mOhm @ 900mA, 4.5V

1.25V @ 250µA

1.65nC @ 4.5V

81pF @ 15V

390mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC4050SSD-13

Diodes Incorporated

MOSFET N/P-CH 40V 5.3A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存149,700

Logic Level Gate

40V

5.3A

45 mOhm @ 3A, 10V

1.8V @ 250µA

37.56nC @ 10V

1790.8pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS3992

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 4.5A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,136

Standard

100V

4.5A

62 mOhm @ 4.5A, 10V

4V @ 250µA

15nC @ 10V

750pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BUK9K25-40EX

Nexperia USA Inc.

MOSFET 2N-CH 40V 18.2A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存22,866

Logic Level Gate

40V

18.2A

24 mOhm @ 5A, 10V

2.1V @ 1mA

6.3nC @ 5V

701pF @ 25V

32W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

NTHD4508NT1G

ON Semiconductor

MOSFET 2N-CH 20V 3A CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Power - Max: 1.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存595,740

Logic Level Gate

20V

3A

75 mOhm @ 3.1A, 4.5V

1.2V @ 250µA

4nC @ 4.5V

180pF @ 10V

1.13W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

DMN5L06VK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存6,741,552

Logic Level Gate

50V

280mA

2 Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN2710UDWQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Power - Max: 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

20V

800mA (Ta)

450mOhm @ 600mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V

42pF @ 16V

360mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

LM2724MX-NOPB

National Semiconductor

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MCH6630-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

KGF6N05D-400

Renesas Electronics Corporation

MOSFET 2N-CH 5.5V 12A 20WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 5.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-UFLGA, CSP
Supplier Device Package: 20-WLCSP (2.48x1.17)

封装: -

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-

5.5V

12A (Ta)

3mOhm @ 6A, 4.5V

900mV @ 250µA

4nC @ 3.5V

630pF @ 5.5V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

20-UFLGA, CSP

20-WLCSP (2.48x1.17)

AONY36356

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17.5A/32A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: -

库存8,601

-

30V

17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)

6.1mOhm @ 20A, 10V

2.1V @ 250µA

20nC @ 10V

920pF @ 15V

2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

NVMFD5C446NLT1G

onsemi

MOSFET 2N-CH 40V 25A/145A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Power - Max: 3.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存3,033

-

40V

25A (Ta), 145A (Tc)

2.65mOhm @ 20A, 10V

2.2V @ 90µA

25nC @ 4.5V

3170pF @ 25V

3.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

DMTH10H038SPDW-13

Diodes Incorporated

MOSFET 2N-CH 100V 25A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
Power - Max: 2.7W (Ta), 39W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封装: -

Request a Quote

-

100V

25A (Tc)

33mOhm @ 10A, 10V

4V @ 250µA

8nC @ 10V

544pF @ 50V

2.7W (Ta), 39W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

PJX8802_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.7A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存11,787

-

20V

700mA (Ta)

150mOhm @ 700mA, 4.5V

1V @ 250µA

1.6nC @ 4.5V

92pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

CBB032M12FM3T

Wolfspeed, Inc.

SIC 4N-CH 1200V 39A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存150

-

1200V (1.2kV)

39A (Tj)

44mOhm @ 30A, 15V

3.9V @ 11mA

118nC @ 15V

3500pF @ 1000V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

BUK9MRR-65PKK-518

Nexperia USA Inc.

MOSFET 2N-CH 65V 4.8A 20SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 60.7mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 25V
Power - Max: 3.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

封装: -

Request a Quote

Logic Level Gate

65V

4.8A (Tc)

60.7mOhm @ 3A, 10V

2V @ 1mA

8.8nC @ 5V

712pF @ 25V

3.2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO

UPA1759G-E1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 60V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP

封装: -

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Logic Level Gate

60V

5A

150mOhm @ 2.5A, 10V

2.5V @ 1mA

8nC @ 10V

190pF @ 10V

2W

-

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-PSOP

MSCSM120AM08CT3AG

Microchip Technology

SIC 2N-CH 1200V 337A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Power - Max: 1.409kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

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-

1200V (1.2kV)

337A (Tc)

7.8mOhm @ 160A, 20V

2.8V @ 4mA

928nC @ 20V

12.08pF @ 1000V

1.409kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

DMTH45M5SPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Power - Max: 3.3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封装: -

库存6,570

-

40V

79A (Tc)

5.5mOhm @ 25A, 10V

3.5V @ 250µA

13.2nC @ 10V

1083pF @ 20V

3.3W (Ta), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)