页 107 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL215CL6327HTSA1	Infineon Technologies	MOSFET N/P-CH 20V 1.5A TSOP-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封装: SOT-23-6 Thin, TSOT-23-6	库存4,752	Logic Level Gate	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.73nC @ 4.5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
IRF9956TR	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存105,600	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7379TR	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存292,884	Standard	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6544BDQ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 3.7A 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存9,180	Logic Level Gate	30V	3.7A, 3.8A	43 mOhm @ 3.8A, 10V	3V @ 250µA	15nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTLUD3191PZTAG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	封装: 6-UFDFN Exposed Pad	库存5,616	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
FDC6036P_F077	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 5A 6SSOT FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6	封装: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	库存6,288	Logic Level Gate	20V	5A	44 mOhm @ 5A, 4.5V	1.5V @ 250µA	14nC @ 4.5V	992pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6
APTC80DSK29T3G	Microsemi Corporation	MOSFET 2N-CH 800V 15A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Power - Max: 156W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存4,528	Standard	800V	15A	290 mOhm @ 7.5A, 10V	3.9V @ 1mA	90nC @ 10V	2254pF @ 25V	156W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
ZXMD63P03XTC	Diodes Incorporated	MOSFET 2P-CH 30V 8MSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存30,012	Logic Level Gate	30V	-	185 mOhm @ 1.2A, 10V	1V @ 250µA (Min)	7nC @ 10V	270pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
APTMC120AM09CT3AG	Microsemi Corporation	MOSFET 2N-CH 1200V 295A SP3F FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 295A Rds On (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存7,888	Standard	1200V (1.2kV)	295A	9 mOhm @ 200A, 20V	2.4V @ 40mA (Typ)	644nC @ 20V	11000pF @ 1000V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
TC8220K6-G	Microchip Technology	MOSFET 2N/2P-CH 200V 12VDFN FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)	封装: 12-VFDFN Exposed Pad	库存5,376	Standard	200V	-	6 Ohm @ 1A, 10V	2.4V @ 1mA	-	56pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VFDFN Exposed Pad	12-DFN (4x4)
DMNH4026SSD-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,200	Standard	-	7.5A (Ta)	24 mOhm @ 6A, 10V	3V @ 250µA	8.8nC @ 4.5V	1060pF @ 20V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4804CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存310,476	Standard	30V	8A	22 mOhm @ 7.5A, 10V	2.4V @ 250µA	23nC @ 10V	865pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60AM45BC1G	Microsemi Corporation	MOSFET 3N-CH 600V 49A SP1 FET Type: 3 N Channel (Phase Leg + Boost Chopper) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存3,488	Standard	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI7212DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存161,460	Logic Level Gate	30V	4.9A	36 mOhm @ 6.8A, 10V	1.6V @ 250µA	11nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
AO4838	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 11A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存24,462	Logic Level Gate	30V	11A	9.6 mOhm @ 11A, 10V	2.6V @ 250µA	22nC @ 10V	1300pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMHC3F381N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 30V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.98A, 3.36A Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存225,600	Logic Level Gate	30V	3.98A, 3.36A	33 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 10V	430pF @ 15V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8M21HZGTB	Rohm Semiconductor	MOSFET N/P-CH 45V 6A/4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存5,970	-	45V	6A (Ta), 4A (Ta)	25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V	2.5V @ 1mA	21.6nC @ 5V, 28nC @ 5V	1400pF @ 10V, 2400pF @10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SH8KC7TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 10.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存5,658	-	60V	10.5A (Ta)	12.4mOhm @ 10.5A, 10V	2.5V @ 1mA	22nC @ 10V	1400pF @ 30V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FS05MR12A6MA1BBPSA1	Infineon Technologies	SIC 1200V 200A AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	封装: -	库存30	-	1200V (1.2kV)	200A	-	-	-	-	-	-	Chassis Mount	Module	AG-HYBRIDD-2
DMN10H220LDV-13	Diodes Incorporated	MOSFET 2N-CH 100V PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Power - Max: 1.8W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	100V	10.5A (Tc)	222mOhm @ 2A, 10V	2.5V @ 250µA	6.7nC @ 10V	366pF @ 50V	1.8W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMT69M9LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 11A/44A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2212pF @ 30V Power - Max: 2.5W (Ta), 40.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封装: -	Request a Quote	-	60V	11A (Ta), 44A (Tc)	12.5mOhm @ 20A, 10V	2V @ 250µA	33.5nC @ 10V	2212pF @ 30V	2.5W (Ta), 40.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMN31D5UDW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	30V	430mA (Ta)	1.5Ohm @ 100mA, 4.5V	0.9V @ 250µA	0.3nC @ 4.5V	15.4pF @ 15V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MTB6N60ET4	onsemi	MOSFET N-CH 600V 6A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMNH4005SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CSD86336Q3D	Texas Instruments	MOSFET 2N-CH 25V 20A 8VSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	封装: -	Request a Quote	Logic Level Gate, 5V Drive	25V	20A (Ta)	9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	1.9V @ 250µA, 1.6V @ 250µA	3.8nC @ 45V, 7.4nC @ 45V	494pF @ 12.5V, 970pF @ 12.5V	6W	-55°C ~ 125°C	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
RF1S50N06SM9AS2551	Harris Corporation	MOSFET 60V 50A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FAM65CR51XZ2	onsemi	APM16-CDB SF3 650V 51MOHM ALN L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V Power - Max: 463W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SSIP Exposed Pad, Formed Leads Supplier Device Package: APMCD-B16	封装: -	Request a Quote	-	650V	64A (Tc)	51mOhm @ 20A, 10V	5V @ 3.3mA	123nC @ 10V	4864pF @ 400V	463W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	12-SSIP Exposed Pad, Formed Leads	APMCD-B16
TP44110HB	Tagore Technology	GANFET 2N-CH 650V 30QFN FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 400V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 30-PowerWFQFN Supplier Device Package: 30-QFN (8x10)	封装: -	库存180	-	650V	19A (Tc)	118mOhm @ 500mA, 6V	2.5V @ 11mA	3nC @ 6V	110pF @ 400V	-	-55°C ~ 150°C (TJ)	Surface Mount	30-PowerWFQFN	30-QFN (8x10)
DMT47M2LDV-7	Diodes Incorporated	MOSFET 2N-CH 40V 11.9A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Power - Max: 2.34W (Ta), 14.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	40V	11.9A (Ta), 30.2A (Tc)	10.8mOhm @ 20A, 10V	2.3V @ 250µA	14nC @ 10V	891pF @ 20V	2.34W (Ta), 14.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
BUK9K13-60RAX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存39,840	Logic Level Gate	60V	40A (Ta)	11.2mOhm @ 10A, 10V	2.1V @ 1mA	22.4nC @ 5V	2953pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

BSL215CL6327HTSA1

Infineon Technologies

MOSFET N/P-CH 20V 1.5A TSOP-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

库存4,752

Logic Level Gate

20V

1.5A

140 mOhm @ 1.5A, 4.5V

1.2V @ 3.7µA

0.73nC @ 4.5V

143pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

IRF9956TR

Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存105,600

Logic Level Gate

30V

3.5A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7379TR

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存292,884

Standard

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6544BDQ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存9,180

Logic Level Gate

30V

3.7A, 3.8A

43 mOhm @ 3.8A, 10V

3V @ 250µA

15nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTLUD3191PZTAG

ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

封装: 6-UFDFN Exposed Pad

库存5,616

Logic Level Gate

20V

1.1A

250 mOhm @ 1.5A, 4.5V

1V @ 250µA

3.5nC @ 4.5V

160pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

FDC6036P_F077

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 5A 6SSOT

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6

封装: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

库存6,288

Logic Level Gate

20V

5A

44 mOhm @ 5A, 4.5V

1.5V @ 250µA

14nC @ 4.5V

992pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6

APTC80DSK29T3G

Microsemi Corporation

MOSFET 2N-CH 800V 15A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Power - Max: 156W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存4,528

Standard

800V

15A

290 mOhm @ 7.5A, 10V

3.9V @ 1mA

90nC @ 10V

2254pF @ 25V

156W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

ZXMD63P03XTC

Diodes Incorporated

MOSFET 2P-CH 30V 8MSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存30,012

Logic Level Gate

30V

-

185 mOhm @ 1.2A, 10V

1V @ 250µA (Min)

7nC @ 10V

270pF @ 25V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

APTMC120AM09CT3AG

Microsemi Corporation

MOSFET 2N-CH 1200V 295A SP3F

FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 295A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存7,888

Standard

1200V (1.2kV)

295A

9 mOhm @ 200A, 20V

2.4V @ 40mA (Typ)

644nC @ 20V

11000pF @ 1000V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

TC8220K6-G

Microchip Technology

MOSFET 2N/2P-CH 200V 12VDFN

FET Type: 2 N and 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x4)

封装: 12-VFDFN Exposed Pad

库存5,376

Standard

200V

-

6 Ohm @ 1A, 10V

2.4V @ 1mA

-

56pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

12-VFDFN Exposed Pad

12-DFN (4x4)

DMNH4026SSD-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,200

Standard

-

7.5A (Ta)

24 mOhm @ 6A, 10V

3V @ 250µA

8.8nC @ 4.5V

1060pF @ 20V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4804CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存310,476

Standard

30V

8A

22 mOhm @ 7.5A, 10V

2.4V @ 250µA

23nC @ 10V

865pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60AM45BC1G

Microsemi Corporation

MOSFET 3N-CH 600V 49A SP1

FET Type: 3 N Channel (Phase Leg + Boost Chopper)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存3,488

Standard

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SI7212DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存161,460

Logic Level Gate

30V

4.9A

36 mOhm @ 6.8A, 10V

1.6V @ 250µA

11nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

AO4838

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存24,462

Logic Level Gate

30V

11A

9.6 mOhm @ 11A, 10V

2.6V @ 250µA

22nC @ 10V

1300pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ZXMHC3F381N8TC

Diodes Incorporated

MOSFET 2N/2P-CH 30V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.98A, 3.36A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存225,600

Logic Level Gate

30V

3.98A, 3.36A

33 mOhm @ 5A, 10V

3V @ 250µA

9nC @ 10V

430pF @ 15V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8M21HZGTB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存5,970

-

45V

6A (Ta), 4A (Ta)

25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V

2.5V @ 1mA

21.6nC @ 5V, 28nC @ 5V

1400pF @ 10V, 2400pF @10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SH8KC7TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 10.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存5,658

-

60V

10.5A (Ta)

12.4mOhm @ 10.5A, 10V

2.5V @ 1mA

22nC @ 10V

1400pF @ 30V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FS05MR12A6MA1BBPSA1

Infineon Technologies

SIC 1200V 200A AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

封装: -

库存30

-

1200V (1.2kV)

200A

-

Chassis Mount

Module

AG-HYBRIDD-2

DMN10H220LDV-13

Diodes Incorporated

MOSFET 2N-CH 100V PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Power - Max: 1.8W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

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-

100V

10.5A (Tc)

222mOhm @ 2A, 10V

2.5V @ 250µA

6.7nC @ 10V

366pF @ 50V

1.8W (Ta), 40W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMT69M9LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 11A/44A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2212pF @ 30V
Power - Max: 2.5W (Ta), 40.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封装: -

Request a Quote

-

60V

11A (Ta), 44A (Tc)

12.5mOhm @ 20A, 10V

2V @ 250µA

33.5nC @ 10V

2212pF @ 30V

2.5W (Ta), 40.3W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMN31D5UDW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

30V

430mA (Ta)

1.5Ohm @ 100mA, 4.5V

0.9V @ 250µA

0.3nC @ 4.5V

15.4pF @ 15V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MTB6N60ET4

onsemi

MOSFET N-CH 600V 6A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

DMNH4005SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CSD86336Q3D

Texas Instruments

MOSFET 2N-CH 25V 20A 8VSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
Power - Max: 6W
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

封装: -

Request a Quote

Logic Level Gate, 5V Drive

25V

20A (Ta)

9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

1.9V @ 250µA, 1.6V @ 250µA

3.8nC @ 45V, 7.4nC @ 45V

494pF @ 12.5V, 970pF @ 12.5V

6W

-55°C ~ 125°C

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

RF1S50N06SM9AS2551

Harris Corporation

MOSFET 60V 50A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

FAM65CR51XZ2

onsemi

APM16-CDB SF3 650V 51MOHM ALN L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Power - Max: 463W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Supplier Device Package: APMCD-B16

封装: -

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-

650V

64A (Tc)

51mOhm @ 20A, 10V

5V @ 3.3mA

123nC @ 10V

4864pF @ 400V

463W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

12-SSIP Exposed Pad, Formed Leads

APMCD-B16

TP44110HB

Tagore Technology

GANFET 2N-CH 650V 30QFN

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 400V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 30-PowerWFQFN
Supplier Device Package: 30-QFN (8x10)

封装: -

库存180

-

650V

19A (Tc)

118mOhm @ 500mA, 6V

2.5V @ 11mA

3nC @ 6V

110pF @ 400V

-

-55°C ~ 150°C (TJ)

Surface Mount

30-PowerWFQFN

30-QFN (8x10)

DMT47M2LDV-7

Diodes Incorporated

MOSFET 2N-CH 40V 11.9A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Power - Max: 2.34W (Ta), 14.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

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-

40V

11.9A (Ta), 30.2A (Tc)

10.8mOhm @ 20A, 10V

2.3V @ 250µA

14nC @ 10V

891pF @ 20V

2.34W (Ta), 14.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

BUK9K13-60RAX

Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存39,840

Logic Level Gate

60V

40A (Ta)

11.2mOhm @ 10A, 10V

2.1V @ 1mA

22.4nC @ 5V

2953pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D