页 651 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SB150-B	Diodes Incorporated	DIODE SCHOTTKY 50V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存4,656	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
HS247180R	Microsemi Corporation	DIODE MODULE 180V 240A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 180V Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封装: HALF-PAK	库存7,632	180V	240A	860mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 180V	6000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
MR751RL	ON Semiconductor	DIODE GP 100V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存2,192	100V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 100V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
R6202430XXOO	Powerex Inc.	DIODE MODULE 2.4KV 300A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 6µs Current - Reverse Leakage @ Vr: 50mA @ 2400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	封装: DO-200AA, A-PUK	库存3,328	2400V	300A	1.7V @ 800A	Standard Recovery >500ns, > 200mA (Io)	6µs	50mA @ 2400V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
R6220655ESOO	Powerex Inc.	DIODE MODULE 600V 550A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 550A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -	封装: DO-200AA, A-PUK	库存3,504	600V	550A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 600V	-	Chassis Mount	DO-200AA, A-PUK	-	-
1N5623	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: A, Axial	库存3,360	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
VS-30ETH06-N3	Vishay Semiconductor Diodes Division	DIODE FRED 30A 600V TO-220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2	库存3,424	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	31ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
GP2D010A065C	Global Power Technologies Group	SIC SCHOTTKY RECTIFIER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 650V Capacitance @ Vr, F: 527pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,200	650V	30A (DC)	1.65V @ 10A	No Recovery Time > 500mA (Io)	-	100µA @ 650V	527pF @ 1V, 1MHz	Through Hole	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
S1FLB-GS18	Vishay Semiconductor Diodes Division	DIODE SW 100V DO-219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,576	100V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SS1H10LS RVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123H	库存5,200	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
VS-70HFLR100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存7,056	1000V	70A	1.85V @ 219.8A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
JANTX1N3595US	Microsemi Corporation	DIODE GEN PURP 200A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, B	库存6,112	-	200A (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
VS-70HFL100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存6,420	1000V	70A	1.85V @ 219.8A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
DB2U30800L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA USSMINI Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.3ns Current - Reverse Leakage @ Vr: 120µA @ 30V Capacitance @ Vr, F: 2.9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: USSMINI2-F2-B Operating Temperature - Junction: 125°C (Max)	封装: SOD-923	库存103,356	30V	100mA	420mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.3ns	120µA @ 30V	2.9pF @ 10V, 1MHz	Surface Mount	SOD-923	USSMINI2-F2-B	125°C (Max)
STTH6006W	STMicroelectronics	DIODE GEN PURP 600V 60A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max)	封装: DO-247-2 (Straight Leads)	库存117,864	600V	60A	1.85V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	50µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
FR1B	SMC Diode Solutions	DIODE GEN PURP 100V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-50°C ~ 150°C
TSD3JFSH	Taiwan Semiconductor Corporation	3A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	18pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-40°C ~ 175°C
BD890YS_L2_00001	Panjit International Inc.	DIODE SCHOTTKY 90V 8A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	90 V	8A	800 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 90 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-65°C ~ 175°C
1N2278R	Solid State Inc.	DIODE GEN PURP REV 600V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	600 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
MUR160A	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 27pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存15,000	600 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	27pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
VS-8ESU06HM3-H	Vishay	FREDS - SMPC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	8A	1.36 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	5 µA @ 600 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
ST8100S	SMC Diode Solutions	100V, 8A, TO-277B, ULTRA LOW VF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 100 V Capacitance @ Vr, F: 542pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存30,000	100 V	8A	680 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 100 V	542pF @ 5V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
PS415014	Powerex Inc.	DIODE GP 5KV 1800A POW-R-BLOK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000 V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 µs Current - Reverse Leakage @ Vr: 400 mA @ 5000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: POW-R-BLOK™ Module Supplier Device Package: POW-R-BLOK™ Module Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	5000 V	1800A	-	Standard Recovery >500ns, > 200mA (Io)	30 µs	400 mA @ 5000 V	-	Chassis Mount	POW-R-BLOK™ Module	POW-R-BLOK™ Module	-40°C ~ 150°C
PNU65010EP-QX	Nexperia USA Inc.	PNU65010EP-Q/SOD128/FLATPOWER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Current - Reverse Leakage @ Vr: 1 µA @ 650 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	封装: -	库存8,889	650 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	1 µA @ 650 V	11pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
PG1510_R2_00001	Panjit International Inc.	DIODE GEN PURP 1KV 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1000 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SDS065J050H3-ISATH	Luminus Devices Inc.	DIODE 650V-50A TO247-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 114A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 2970pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	114A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	2970pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2L	-55°C ~ 175°C
RB078RSM15STFTL1	Rohm Semiconductor	150V 5A, TO-277GE, ULTRA LOW IR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	封装: -	库存11,835	150 V	5A	870 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.1 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
BAS316-DG-B4X	Nexperia USA Inc.	DIODE GEN PURP 100V 250MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	封装: -	Request a Quote	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 80 V	1.5pF @ 0V, 1MHz	Surface Mount	-	-	150°C (Max)
BAS70L-QYL	Nexperia USA Inc.	DIODE SCHOTTKY 70V 70MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 70 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C	封装: -	库存24,525	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 70 V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	DFN1006-2	150°C
S306100F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

SB150-B

Diodes Incorporated

DIODE SCHOTTKY 50V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存4,656

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

HS247180R

Microsemi Corporation

DIODE MODULE 180V 240A HALF-PAK

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8mA @ 180V
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封装: HALF-PAK

库存7,632

180V

240A

860mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

8mA @ 180V

6000pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

MR751RL

ON Semiconductor

DIODE GP 100V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存2,192

100V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 100V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

R6202430XXOO

Powerex Inc.

DIODE MODULE 2.4KV 300A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6µs
Current - Reverse Leakage @ Vr: 50mA @ 2400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

封装: DO-200AA, A-PUK

库存3,328

2400V

300A

1.7V @ 800A

Standard Recovery >500ns, > 200mA (Io)

6µs

50mA @ 2400V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

R6220655ESOO

Powerex Inc.

DIODE MODULE 600V 550A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 550A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -

封装: DO-200AA, A-PUK

库存3,504

600V

550A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 600V

-

Chassis Mount

DO-200AA, A-PUK

-

1N5623

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: A, Axial

库存3,360

1000V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

500nA @ 1000V

15pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

VS-30ETH06-N3

Vishay Semiconductor Diodes Division

DIODE FRED 30A 600V TO-220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2

库存3,424

600V

30A

2.6V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

31ns

50µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

GP2D010A065C

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: 527pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,200

650V

30A (DC)

1.65V @ 10A

No Recovery Time > 500mA (Io)

-

100µA @ 650V

527pF @ 1V, 1MHz

Through Hole

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-55°C ~ 175°C

S1FLB-GS18

Vishay Semiconductor Diodes Division

DIODE SW 100V DO-219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,576

100V

700mA

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

10µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

SS1H10LS RVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123H

库存5,200

100V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 100V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

VS-70HFLR100S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存7,056

1000V

70A

1.85V @ 219.8A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

100µA @ 1000V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

JANTX1N3595US

Microsemi Corporation

DIODE GEN PURP 200A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, B

库存6,112

-

200A (DC)

1V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

3µs

1nA @ 125V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

VS-70HFL100S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存6,420

1000V

70A

1.85V @ 219.8A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

100µA @ 1000V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

DB2U30800L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA USSMINI

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.3ns
Current - Reverse Leakage @ Vr: 120µA @ 30V
Capacitance @ Vr, F: 2.9pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: USSMINI2-F2-B
Operating Temperature - Junction: 125°C (Max)

封装: SOD-923

库存103,356

30V

100mA

420mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.3ns

120µA @ 30V

2.9pF @ 10V, 1MHz

Surface Mount

SOD-923

USSMINI2-F2-B

125°C (Max)

STTH6006W

STMicroelectronics

DIODE GEN PURP 600V 60A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)

封装: DO-247-2 (Straight Leads)

库存117,864

600V

60A

1.85V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

50µA @ 600V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

175°C (Max)

FR1B

SMC Diode Solutions

DIODE GEN PURP 100V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-50°C ~ 150°C

TSD3JFSH

Taiwan Semiconductor Corporation

3A, 600V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

600 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 600 V

18pF @ 4V, 1MHz

Surface Mount

SOD-128

-40°C ~ 175°C

BD890YS_L2_00001

Panjit International Inc.

DIODE SCHOTTKY 90V 8A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

90 V

8A

800 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 90 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-65°C ~ 175°C

1N2278R

Solid State Inc.

DIODE GEN PURP REV 600V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

600 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

MUR160A

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存15,000

600 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

27pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 175°C

VS-8ESU06HM3-H

Vishay

FREDS - SMPC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

8A

1.36 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

5 µA @ 600 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

ST8100S

SMC Diode Solutions

100V, 8A, TO-277B, ULTRA LOW VF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Capacitance @ Vr, F: 542pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存30,000

100 V

8A

680 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 100 V

542pF @ 5V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277B

-55°C ~ 150°C

PS415014

Powerex Inc.

DIODE GP 5KV 1800A POW-R-BLOK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5000 V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 µs
Current - Reverse Leakage @ Vr: 400 mA @ 5000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: POW-R-BLOK™ Module
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

5000 V

1800A

-

Standard Recovery >500ns, > 200mA (Io)

30 µs

400 mA @ 5000 V

-

Chassis Mount

POW-R-BLOK™ Module

-40°C ~ 150°C

PNU65010EP-QX

Nexperia USA Inc.

PNU65010EP-Q/SOD128/FLATPOWER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Current - Reverse Leakage @ Vr: 1 µA @ 650 V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C

封装: -

库存8,889

650 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

85 ns

1 µA @ 650 V

11pF @ 4V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C

PG1510_R2_00001

Panjit International Inc.

DIODE GEN PURP 1KV 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

1000 V

1.5A

1.1 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 1000 V

25pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

SDS065J050H3-ISATH

Luminus Devices Inc.

DIODE 650V-50A TO247-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 114A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Capacitance @ Vr, F: 2970pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

114A

1.5 V @ 50 A

No Recovery Time > 500mA (Io)

0 ns

120 µA @ 650 V

2970pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247-2L

-55°C ~ 175°C

RB078RSM15STFTL1

Rohm Semiconductor

150V 5A, TO-277GE, ULTRA LOW IR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

封装: -

库存11,835

150 V

5A

870 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.1 µA @ 150 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

BAS316-DG-B4X

Nexperia USA Inc.

DIODE GEN PURP 100V 250MA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

封装: -

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100 V

250mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 80 V

1.5pF @ 0V, 1MHz

Surface Mount

-

150°C (Max)

BAS70L-QYL

Nexperia USA Inc.

DIODE SCHOTTKY 70V 70MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 70mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: 150°C

封装: -

库存24,525

70 V

70mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 70 V

2pF @ 0V, 1MHz

Surface Mount

SOD-882

DFN1006-2

150°C

S306100F

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-