图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4
|
封装: 4-PowerTSFN |
库存7,568 |
|
650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,640 |
|
45V | 20A | 540mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 1900pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存6,976 |
|
100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AC
|
封装: DO-204AC, DO-15, Axial |
库存6,480 |
|
100V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 750ns | 10µA @ 100V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
||
STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD
|
封装: DO-201AD, Axial |
库存518,256 |
|
200V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
||
Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE 2200V 2040A
|
封装: - |
库存7,968 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
TSC America Inc. |
DIODE, SUPER FAST, 20A, 150V, 35
|
封装: TO-220-3 |
库存4,784 |
|
150V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, TRENCH, 15A, 50
|
封装: TO-277, 3-PowerDFN |
库存7,904 |
|
50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD
|
封装: DO-201AD, Axial |
库存3,520 |
|
50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213
|
封装: DO-213AA (Glass) |
库存2,864 |
|
100V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE RECT 3A 400V 50NS DO-214AA
|
封装: DO-214AA, SMB |
库存3,936 |
|
400V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 800V,
|
封装: DO-204AL, DO-41, Axial |
库存6,544 |
|
800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存6,720 |
|
600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 1A, 300V, 35N
|
封装: DO-219AB |
库存2,320 |
|
300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 8pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO247
|
封装: TO-247-2 |
库存5,968 |
|
1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
||
STMicroelectronics |
DIODE GEN PURP 200V 1A DO41
|
封装: DO-204AL, DO-41, Axial |
库存50,766 |
|
200V | 1A | 970mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 1µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
||
SMC Diode Solutions |
DIODE GEN PURP 1KV 3A SMB
|
封装: DO-214AA, SMB |
库存205,368 |
|
1000V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 175°C |
||
STMicroelectronics |
DIODE SCHOTTKY 150V 2A SMA
|
封装: DO-214AC, SMA |
库存3,376,116 |
|
150V | 2A | 820mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5µA @ 150V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | 175°C (Max) |
||
SMC Diode Solutions |
DIODE GEN PURP 200V 1A SMA
|
封装: - |
Request a Quote |
|
200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 5 µA @ 200 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB
|
封装: - |
Request a Quote |
|
1200 V | 25A | 1.14 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -40°C ~ 175°C |
||
Good-Ark Semiconductor |
DIODE, SCHOTTKY, 100MA, 30V, DFN
|
封装: - |
库存60,000 |
|
30 V | 100mA | 600 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 µA @ 30 V | - | Surface Mount | 0201 (0603 Metric) | DFN0603 | 125°C |
||
Microchip Technology |
STD RECTIFIER
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Diotec Semiconductor |
DIODE SCHOTTKY 30V 20A TO263AB
|
封装: - |
Request a Quote |
|
30 V | 20A | 580 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -50°C ~ 150°C |
||
Rohm Semiconductor |
DIODE GEN PURP 650V 60A TO247GE
|
封装: - |
库存1,698 |
|
650 V | 60A | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 650 V | - | Through Hole | TO-247-2 | TO-247GE | 175°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC
|
封装: - |
库存45,000 |
|
400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Infineon Technologies |
INDUSTRY 14
|
封装: - |
库存720 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 400V 3A DFN3820A
|
封装: - |
库存42,900 |
|
400 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 400 V | 19pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -55°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
35NS, 10A, 200V, SUPER FAST RECO
|
封装: - |
Request a Quote |
|
200 V | 10A | 950 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Microchip Technology |
STANDARD RECTIFIER
|
封装: - |
Request a Quote |
|
400 V | 16A | 1.3 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 60V 15A TO277
|
封装: - |
Request a Quote |
|
60 V | 15A | 590 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C |