页 553 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BY252GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO201AD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存6,336	-	-	-	-	-	-	-	-	-	-	-
SS3P4LHM3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存6,064	40V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 40V	280pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
GP20JHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存3,488	600V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 600V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
APT15D30KG	Microsemi Corporation	DIODE GEN PURP 300V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 150µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存3,376	300V	15A	1.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	150µA @ 300V	-	Through Hole	TO-220-2	TO-220-2	-55°C ~ 150°C
30BQ040TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存760,932	40V	3A	530mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
1N4003/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存6,448	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
VS-125NQ015PBF	Vishay Semiconductor Diodes Division	DIODE MODULE 15V 125A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 430mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 15V Capacitance @ Vr, F: 7700pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	封装: D-67 HALF-PAK	库存5,984	15V	120A	430mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	40mA @ 15V	7700pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
VS-80PF140	Vishay Semiconductor Diodes Division	DIODE STD REC 80A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存5,840	1400V	80A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 150°C
VS-50WQ04FNTRHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 40V Capacitance @ Vr, F: 405pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,672	40V	5.5A	510mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 40V	405pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
HER303GA-G	Comchip Technology	DIODE GEN PURP 200V 3A DO201AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存4,144	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-55°C ~ 150°C
UG06B R0G	TSC America Inc.	DIODE, ULTRA FAST, 0.6A, 100V, 1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存5,968	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
STPS160UY	STMicroelectronics	DIODE SCHOTTKY 60V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 670mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-214AA, SMB	库存148,080	60V	1A	670mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	4µA @ 60V	-	Surface Mount	DO-214AA, SMB	SMB	-40°C ~ 150°C
RHRG30120	Fairchild/ON Semiconductor	DIODE GEN PURP 1.2KV 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-247-2	库存173,400	1200V	30A	3.2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
BYC30W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max)	封装: TO-247-2	库存26,256	600V	30A	2.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
EGP50C-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存453,600	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	95pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
SCS215KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 15A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 300µA @ 1200V Capacitance @ Vr, F: 790pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: TO-220-2	库存4,992	1200V	15A (DC)	1.6V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 1200V	790pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
JANTX1N4148UR-1	Aeroflex Metelics, Division of MACOM	DIODE SW 75V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AA	库存44,532	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
VS-20ETS12THM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 20A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封装: -	库存4,494	1200 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
1SS119-04TJ-E-Q	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAT46WH-QX	Nexperia USA Inc.	BAT46WH-Q/SOD123F/TO-236AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 850 mV @ 250 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.9 ns Current - Reverse Leakage @ Vr: 9 µA @ 100 V Capacitance @ Vr, F: 39pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C	封装: -	Request a Quote	100 V	250mA	850 mV @ 250 mA	Fast Recovery =< 500ns, > 200mA (Io)	5.9 ns	9 µA @ 100 V	39pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C
FR104A-G	Comchip Technology	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	25pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
S15MCH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 15A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 93pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存8,400	1000 V	15A	1.1 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
CN5179-BK-TIN-LEAD	Central Semiconductor Corp	DIODE GEN PURP 20V DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 3.7 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	20 V	-	3.7 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 20 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N3140R	Solid State Inc.	DIODE GEN PURP REV 100V 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	100 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
1N3492R	Microchip Technology	DIODE GEN PURP REV 100V 35A DO21 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Press Fit Package / Case: DO-208AA Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	100 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Press Fit	DO-208AA	DO-21	-65°C ~ 175°C
CMMR1U-06-TR-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C	封装: -	库存60,360	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
SMPA845L-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 320pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Supplier Device Package: SMPA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	320pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads	SMPA	-55°C ~ 150°C
CS2K-E3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 800V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	2A	1.2 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2.1 µs	5 µA @ 800 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
GP10-4002-E3-54	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	封装: -	Request a Quote	100 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
VS-8ETH06SHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	22 ns	50 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C

BY252GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO201AD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存6,336

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SS3P4LHM3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 40V
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存6,064

40V

3A

470mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 40V

280pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

GP20JHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存3,488

600V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 600V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

APT15D30KG

Microsemi Corporation

DIODE GEN PURP 300V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 150µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存3,376

300V

15A

1.4V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

32ns

150µA @ 300V

-

Through Hole

TO-220-2

-55°C ~ 150°C

30BQ040TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存760,932

40V

3A

530mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

1N4003/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存6,448

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

VS-125NQ015PBF

Vishay Semiconductor Diodes Division

DIODE MODULE 15V 125A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 15V
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

封装: D-67 HALF-PAK

库存5,984

15V

120A

430mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

40mA @ 15V

7700pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

D-67

-

VS-80PF140

Vishay Semiconductor Diodes Division

DIODE STD REC 80A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存5,840

1400V

80A

1.46V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-55°C ~ 150°C

VS-50WQ04FNTRHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 40V
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,672

40V

5.5A

510mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 40V

405pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

HER303GA-G

Comchip Technology

DIODE GEN PURP 200V 3A DO201AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存4,144

200V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

-55°C ~ 150°C

UG06B R0G

TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 100V, 1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存5,968

100V

600mA

950mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

15ns

5µA @ 100V

9pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

STPS160UY

STMicroelectronics

DIODE SCHOTTKY 60V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-214AA, SMB

库存148,080

60V

1A

670mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

4µA @ 60V

-

Surface Mount

DO-214AA, SMB

SMB

-40°C ~ 150°C

RHRG30120

Fairchild/ON Semiconductor

DIODE GEN PURP 1.2KV 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-247-2

库存173,400

1200V

30A

3.2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

250µA @ 1200V

-

Through Hole

TO-247-2

-65°C ~ 175°C

BYC30W-600PQ

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)

封装: TO-247-2

库存26,256

600V

30A

2.75V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

22ns

10µA @ 600V

-

Through Hole

TO-247-2

175°C (Max)

EGP50C-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存453,600

150V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

95pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

SCS215KGC

Rohm Semiconductor

DIODE SCHOTTKY 1.2KV 15A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Capacitance @ Vr, F: 790pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: TO-220-2

库存4,992

1200V

15A (DC)

1.6V @ 15A

No Recovery Time > 500mA (Io)

0ns

300µA @ 1200V

790pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

JANTX1N4148UR-1

Aeroflex Metelics, Division of MACOM

DIODE SW 75V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AA

库存44,532

75V

200mA

1.2V @ 50mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 75V

-

Surface Mount

DO-213AA

-65°C ~ 175°C

VS-20ETS12THM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 20A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

库存4,494

1200 V

20A

1.1 V @ 20 A

Standard Recovery >500ns, > 200mA (Io)

-

100 µA @ 1200 V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

1SS119-04TJ-E-Q

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

BAT46WH-QX

Nexperia USA Inc.

BAT46WH-Q/SOD123F/TO-236AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 250 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.9 ns
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Capacitance @ Vr, F: 39pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

100 V

250mA

850 mV @ 250 mA

Fast Recovery =< 500ns, > 200mA (Io)

5.9 ns

9 µA @ 100 V

39pF @ 0V, 1MHz

Surface Mount

SOD-123F

150°C

FR104A-G

Comchip Technology

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

25pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

S15MCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 15A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存8,400

1000 V

15A

1.1 V @ 15 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 1000 V

93pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

CN5179-BK-TIN-LEAD

Central Semiconductor Corp

DIODE GEN PURP 20V DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 3.7 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

20 V

-

3.7 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 20 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

1N3140R

Solid State Inc.

DIODE GEN PURP REV 100V 100A DO8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

100 V

100A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

1N3492R

Microchip Technology

DIODE GEN PURP REV 100V 35A DO21

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Press Fit
Package / Case: DO-208AA
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

100 V

35A

1.1 V @ 35 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Press Fit

DO-208AA

DO-21

-65°C ~ 175°C

CMMR1U-06-TR-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 600V 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

库存60,360

600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 600 V

9pF @ 4V, 1MHz

Surface Mount

SOD-123F

-65°C ~ 150°C

SMPA845L-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 320pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads
Supplier Device Package: SMPA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

8A

550 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

320pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads

SMPA

-55°C ~ 150°C

CS2K-E3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.1 µs
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

2A

1.2 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

2.1 µs

5 µA @ 800 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

GP10-4002-E3-54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

封装: -

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100 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

VS-8ETH06SHM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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600 V

8A

2.4 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

22 ns

50 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 175°C