页 550 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IRD3CH11DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,888	-	-	-	-	-	-	-	-	-	-	-
VS-8EWF12STRPBF	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存24,000	1200V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	100µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-VSKE270-12	Vishay Semiconductor Diodes Division	DIODE MODULE 1.2KV MAGN-A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 270A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: MAGN-A-PAK (3) Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -	封装: MAGN-A-PAK (3)	库存6,560	1200V	270A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis Mount	MAGN-A-PAK (3)	MAGN-A-PAK?	-
GPP100MS-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 10A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	封装: P600, Axial	库存6,752	1000V	10A	1.05V @ 10A	Standard Recovery >500ns, > 200mA (Io)	5.5µs	5µA @ 1000V	110pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-55°C ~ 175°C
1N4944GPHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,264	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MURB820TRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,640	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
MA2S11100L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA SSMINI2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SSMini2-F1 Operating Temperature - Junction: 150°C (Max)	封装: SC-79, SOD-523	库存248,400	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SSMini2-F1	150°C (Max)
GKR240/12	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 320A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-205AB, DO-9, Stud	库存6,800	1200V	320A	1.4V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	60mA @ 1200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
VFT2080S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 80V ITO-220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3	库存7,776	80V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 80V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SE70PJHM3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存7,040	600V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 600V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SK515BHM4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存3,552	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SJPA-D3	Sanken	DIODE SCHOTTKY 30V 1A SJP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 125°C	封装: 2-SMD, J-Lead	库存4,400	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	Surface Mount	2-SMD, J-Lead	SJP	-40°C ~ 125°C
B160AE-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存7,632	60V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	45pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
BAS20W RVG	TSC America Inc.	DIODE, SWITCHING & ARRAY, 0.2A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-70, SOT-323	库存6,608	150V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
SR106HR1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存6,928	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CDBC3150-HF	Comchip Technology	DIODE SCHOTTKY 150V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 870mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 150V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -50°C ~ 175°C	封装: DO-214AB, SMC	库存5,744	150V	3A	870mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-50°C ~ 175°C
SMD210PL-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 2A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 210pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	封装: SOD-123F	库存3,184	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	210pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
1SS416,L3M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA FSC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max)	封装: 2-SMD, Flat Lead	库存204,474	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
SF56G-TP	Micro Commercial Co	DIODE GEN PURP 400V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	400 V	5A	1.27 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
1N3619	Solid State Inc.	DIODE GEN PURP 300V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	300 V	16A	1.2 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	1.75 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
ES8DC-HF	Comchip Technology	DIODE GEN PURP 200V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	8A	980 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	90pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RURU10040	Harris Corporation	DIODE AVALANCHE 400V 100A TO218 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 500 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-218-1 Supplier Device Package: TO-218 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	100A	1.6 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 400 V	-	Chassis Mount	TO-218-1	TO-218	-65°C ~ 175°C
RS3K	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存8,670	800 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 800 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ST1B	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
HS15JLW	Taiwan Semiconductor Corporation	75NS, 1.5A, 600V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存60,000	600 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
JAN1N6941UTK3AS	Microchip Technology	DIODE SCHOTTKY 30V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 30 V Capacitance @ Vr, F: 7500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	30 V	150A	500 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	7500pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 175°C
RFS30TZ6SGC13	Rohm Semiconductor	DIODE GEN PURP 650V 30A TO247GE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247GE Operating Temperature - Junction: 175°C	封装: -	库存1,755	650 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 650 V	-	Through Hole	TO-247-2	TO-247GE	175°C
MBRB1060-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	60 V	10A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
1N5819-TR-1	Microchip Technology	DIODE SCHOTTKY 45V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO041, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO041, Axial	DO-41	-65°C ~ 125°C
1N4448_S00Z	onsemi	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-55°C ~ 175°C

IRD3CH11DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,888

-

VS-8EWF12STRPBF

Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存24,000

1200V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

270ns

100µA @ 1200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

VS-VSKE270-12

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV MAGN-A-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 270A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: MAGN-A-PAK (3)
Supplier Device Package: MAGN-A-PAK?
Operating Temperature - Junction: -

封装: MAGN-A-PAK (3)

库存6,560

1200V

270A

-

Standard Recovery >500ns, > 200mA (Io)

-

Chassis Mount

MAGN-A-PAK (3)

MAGN-A-PAK?

-

GPP100MS-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C

封装: P600, Axial

库存6,752

1000V

10A

1.05V @ 10A

Standard Recovery >500ns, > 200mA (Io)

5.5µs

5µA @ 1000V

110pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-55°C ~ 175°C

1N4944GPHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,264

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MURB820TRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,640

200V

8A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

MA2S11100L

Panasonic Electronic Components

DIODE GEN PURP 80V 100MA SSMINI2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F1
Operating Temperature - Junction: 150°C (Max)

封装: SC-79, SOD-523

库存248,400

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SSMini2-F1

150°C (Max)

GKR240/12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 320A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 320A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-205AB, DO-9, Stud

库存6,800

1200V

320A

1.4V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

60mA @ 1200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

VFT2080S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 80V ITO-220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3

库存7,776

80V

20A

920mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 80V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

SE70PJHM3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.9A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存7,040

600V

2.9A

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 600V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SK515BHM4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存3,552

150V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SJPA-D3

Sanken

DIODE SCHOTTKY 30V 1A SJP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 125°C

封装: 2-SMD, J-Lead

库存4,400

30V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 30V

-

Surface Mount

2-SMD, J-Lead

SJP

-40°C ~ 125°C

B160AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存7,632

60V

1A

650mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

45pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

BAS20W RVG

TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.2A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-70, SOT-323

库存6,608

150V

200mA

1.25V @ 100mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 150V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 150°C

SR106HR1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存6,928

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

CDBC3150-HF

Comchip Technology

DIODE SCHOTTKY 150V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 870mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 150V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -50°C ~ 175°C

封装: DO-214AB, SMC

库存5,744

150V

3A

870mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 150V

250pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-50°C ~ 175°C

SMD210PL-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 2A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 210pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

封装: SOD-123F

库存3,184

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

210pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

1SS416,L3M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA FSC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)

封装: 2-SMD, Flat Lead

库存204,474

30V

100mA

500mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

15pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

fSC

125°C (Max)

SF56G-TP

Micro Commercial Co

DIODE GEN PURP 400V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

400 V

5A

1.27 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

1N3619

Solid State Inc.

DIODE GEN PURP 300V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

300 V

16A

1.2 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

1.75 µA @ 300 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

ES8DC-HF

Comchip Technology

DIODE GEN PURP 200V 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

8A

980 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

90pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

RURU10040

Harris Corporation

DIODE AVALANCHE 400V 100A TO218

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: TO-218-1
Supplier Device Package: TO-218
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

100A

1.6 V @ 100 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

500 µA @ 400 V

-

Chassis Mount

TO-218-1

TO-218

-65°C ~ 175°C

RS3K

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存8,670

800 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

10 µA @ 800 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

ST1B

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

HS15JLW

Taiwan Semiconductor Corporation

75NS, 1.5A, 600V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存60,000

600 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 600 V

9pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 150°C

JAN1N6941UTK3AS

Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

30 V

150A

500 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 30 V

7500pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 175°C

RFS30TZ6SGC13

Rohm Semiconductor

DIODE GEN PURP 650V 30A TO247GE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247GE
Operating Temperature - Junction: 175°C

封装: -

库存1,755

650 V

30A

2.3 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 650 V

-

Through Hole

TO-247-2

TO-247GE

175°C

MBRB1060-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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60 V

10A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 150°C

1N5819-TR-1

Microchip Technology

DIODE SCHOTTKY 45V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO041, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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45 V

1A

490 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 45 V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO041, Axial

DO-41

-65°C ~ 125°C

1N4448_S00Z

onsemi

DIODE GEN PURP 100V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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100 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-55°C ~ 175°C