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零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSR6V600D1-13	Diodes Incorporated	DIODE GEN PURP 600V 6A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3 Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,392	600V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3	-65°C ~ 175°C
UH1DHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AC, SMA	库存3,376	200V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
EGP50GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存3,184	400V	5A	1.25V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	75pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
MBR340RL	ON Semiconductor	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AA, DO-27, Axial	库存4,992	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 40V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
JANTX1N6643	Microsemi Corporation	DIODE GEN PURP 125V 300MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 50nA @ 20V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: 05 Plastic Package Operating Temperature - Junction: -65°C ~ 175°C	封装: Axial	库存3,408	125V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	50nA @ 20V	5pF @ 0V, 1MHz	Through Hole	Axial	05 Plastic Package	-65°C ~ 175°C
SDT8A120P5Q-13	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,336	-	-	-	-	-	-	-	-	-	-	-
AU2PD-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.6A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 42pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存7,392	200V	1.6A (DC)	1.9V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 200V	42pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
MBR8H100MFST1G	ON Semiconductor	DIODE SCHOTTKY 100V 8A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	封装: 8-PowerTDFN, 5 Leads	库存7,840	100V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
SS3P4-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-220AA	库存2,928	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	130pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SK315TR	SMC Diode Solutions	DIODE SCHOTTKY 150V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 890mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: 100pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存7,008	150V	3A	890mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 150V	100pF @ 5V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
BAQ34-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 60V 200MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1nA @ 30V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AC, MINI-MELF, SOD-80	库存3,040	60V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1nA @ 30V	3pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	-65°C ~ 175°C
SS110LSHRVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123H	库存5,184	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
VSB1545-M3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 15A P600 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: 1290pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C	封装: P600, Axial	库存3,232	45V	15A	590mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	1290pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-40°C ~ 150°C
MBRH20045	GeneSiC Semiconductor	DIODE MODULE 45V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	封装: D-67	库存4,448	45V	200A	650mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRM140T3G	ON Semiconductor	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存8,937,612	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
CMOD2004-TR-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 240V 200MA SOD523 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 240 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	库存127,446	240 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 240 V	5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
S34120	Microchip Technology	DIODE GEN PURP 1.2KV 45A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1200 V	45A	1.15 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
EAL1G	Diotec Semiconductor	IC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 3 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 175°C	封装: -	Request a Quote	400 V	1A	1.35 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 µA @ 400 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 175°C
VSSAF3M63-M3-I	Vishay	3A, 60V SLIMSMA TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.6A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 60 V Capacitance @ Vr, F: 575pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	60 V	2.6A	620 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 60 V	575pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 175°C
BAS16LS-QYL	Nexperia USA Inc.	DIODE GP 100V 215MA DFN1006BD-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2 Operating Temperature - Junction: 150°C	封装: -	库存84,657	100 V	215mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 80 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-882	DFN1006BD-2	150°C
ACFRA101-HF	Comchip Technology	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UJ3D06520TS	Qorvo	DIODE SIL CARB 650V 20A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 654pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存18,333	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	654pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SD103AW-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 5 µA @ 30 V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 30 V	28pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
VS-8ETH03STRR-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 300V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	300 V	8A	1.25 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 300 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
CGRC305-G	Comchip Technology	DIODE GEN PURP 600V 3A DO214AB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: 150°C	封装: -	Request a Quote	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	150°C
SDS065J006E3-ISARH	Luminus Devices Inc.	DIODE 650V-6A TO263-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 310pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-2L	-55°C ~ 175°C
SD101BWSHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 15MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 200 nA @ 40 V Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存18,000	50 V	15mA	950 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 40 V	2.1pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
1N4148W-EVL	Venkel	Rectifier,SOD-123,75V,200mA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	-	-55°C ~ 150°C
JANTX1N5614-TR	Semtech Corporation	DIODE AVALANCHE 200V 2A AXIAL Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 200 V Capacitance @ Vr, F: 23pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	2A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	23pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
SIDC03D60C8F1SA1	Infineon Technologies	DIODE GEN PURP 600V 10A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	600 V	10A	1.95 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C

DSR6V600D1-13

Diodes Incorporated

DIODE GEN PURP 600V 6A TO252-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,392

600V

6A

3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

30pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-3

-65°C ~ 175°C

UH1DHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AC, SMA

库存3,376

200V

1A

1.05V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

EGP50GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存3,184

400V

5A

1.25V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

75pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

MBR340RL

ON Semiconductor

DIODE SCHOTTKY 40V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AA, DO-27, Axial

库存4,992

40V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 40V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

JANTX1N6643

Microsemi Corporation

DIODE GEN PURP 125V 300MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 50nA @ 20V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: 05 Plastic Package
Operating Temperature - Junction: -65°C ~ 175°C

封装: Axial

库存3,408

125V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

50nA @ 20V

5pF @ 0V, 1MHz

Through Hole

Axial

05 Plastic Package

-65°C ~ 175°C

SDT8A120P5Q-13

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,336

-

AU2PD-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存7,392

200V

1.6A (DC)

1.9V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 200V

42pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

MBR8H100MFST1G

ON Semiconductor

DIODE SCHOTTKY 100V 8A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

封装: 8-PowerTDFN, 5 Leads

库存7,840

100V

8A

900mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 100V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

SS3P4-M3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-220AA

库存2,928

40V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

130pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

SK315TR

SMC Diode Solutions

DIODE SCHOTTKY 150V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Capacitance @ Vr, F: 100pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存7,008

150V

3A

890mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 150V

100pF @ 5V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

BAQ34-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 200MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1nA @ 30V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AC, MINI-MELF, SOD-80

库存3,040

60V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

1nA @ 30V

3pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

-65°C ~ 175°C

SS110LSHRVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123H

库存5,184

100V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

80pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

VSB1545-M3/54

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 15A P600

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C

封装: P600, Axial

库存3,232

45V

15A

590mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 45V

1290pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-40°C ~ 150°C

MBRH20045

GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

封装: D-67

库存4,448

45V

200A

650mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis Mount

D-67

-

MBRM140T3G

ON Semiconductor

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存8,937,612

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

CMOD2004-TR-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 240V 200MA SOD523

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 240 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

库存127,446

240 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 240 V

5pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-65°C ~ 150°C

S34120

Microchip Technology

DIODE GEN PURP 1.2KV 45A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

1200 V

45A

1.15 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

EAL1G

Diotec Semiconductor

IC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

Request a Quote

400 V

1A

1.35 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

3 µA @ 400 V

-

Surface Mount

DO-213AA

DO-213AA, MINI-MELF

-50°C ~ 175°C

VSSAF3M63-M3-I

Vishay

3A, 60V SLIMSMA TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2.6A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 60 V
Capacitance @ Vr, F: 575pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

60 V

2.6A

620 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 60 V

575pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 175°C

BAS16LS-QYL

Nexperia USA Inc.

DIODE GP 100V 215MA DFN1006BD-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006BD-2
Operating Temperature - Junction: 150°C

封装: -

库存84,657

100 V

215mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 80 V

1.5pF @ 0V, 1MHz

Surface Mount

SOD-882

DFN1006BD-2

150°C

ACFRA101-HF

Comchip Technology

DIODE GEN PURP 50V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

UJ3D06520TS

Qorvo

DIODE SIL CARB 650V 20A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存18,333

650 V

20A

1.7 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

120 µA @ 650 V

654pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

SD103AW-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

350mA

600 mV @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

5 µA @ 30 V

28pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

VS-8ETH03STRR-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

300 V

8A

1.25 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

20 µA @ 300 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

CGRC305-G

Comchip Technology

DIODE GEN PURP 600V 3A DO214AB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

600 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

150°C

SDS065J006E3-ISARH

Luminus Devices Inc.

DIODE 650V-6A TO263-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

20A

1.5 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 650 V

310pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263-2L

-55°C ~ 175°C

SD101BWSHE3-TP

Micro Commercial Co

DIODE SCHOTTKY 50V 15MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 15mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存18,000

50 V

15mA

950 mV @ 15 mA

Small Signal =< 200mA (Io), Any Speed

1 ns

200 nA @ 40 V

2.1pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 125°C

1N4148W-EVL

Venkel

Rectifier,SOD-123,75V,200mA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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75 V

200mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

2.5 µA @ 75 V

1.5pF @ 0V, 1MHz

Surface Mount

SOD-123

-

-55°C ~ 150°C

JANTX1N5614-TR

Semtech Corporation

DIODE AVALANCHE 200V 2A AXIAL

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Capacitance @ Vr, F: 23pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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200 V

2A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 200 V

23pF @ 5V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

SIDC03D60C8F1SA1

Infineon Technologies

DIODE GEN PURP 600V 10A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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600 V

10A

1.95 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C