页 539 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BYS459B-1500E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.5KV 6.5A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 6.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 250µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,360	1500V	6.5A	1.3V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	250µA @ 1500V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
BYD13GGP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,200	400V	1A	-	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
8EWF06STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,832	600V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-80PFR120W	Vishay Semiconductor Diodes Division	DIODE STD REC 80A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存3,136	1200V	80A	1.4V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 180°C
VS-1N3881	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 6A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 15µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存7,152	200V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	15µA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
AR4PJ-M3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 77pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存5,936	600V	2A (DC)	1.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 600V	77pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
RU 1C	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 3V @ 250mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存2,944	1000V	200mA	3V @ 250mA	Small Signal =< 200mA (Io), Any Speed	400ns	10µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
SF31G A0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存7,392	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYW55-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	封装: SOD-57, Axial	库存3,328	800V	2A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 800V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SS2P3LHM3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-220AA	库存36,000	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	130pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
BYG21KHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存5,360	800V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SFT12G R0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存7,728	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
V35PWM15HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 35A 150V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 150V Capacitance @ Vr, F: 1620pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,984	150V	35A	1.4V @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	1620pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
SDUR3030W	SMC Diode Solutions	DIODE GEN PURP 300V 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-247-2	库存7,956	300V	30A	1.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	5µA @ 300V	-	Through Hole	TO-247-2	TO-247AC	-55°C ~ 150°C
RS07B-GS08	Vishay Semiconductor Diodes Division	DIODE SW 100V DO-219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存13,956	100V	500mA	1.15V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
CMDSH2-3 TR	Central Semiconductor Corp	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 15pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	封装: SC-76, SOD-323	库存346,980	30V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	15pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
BAT54LP-7	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 125°C	封装: 2-UFDFN	库存144,000	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	2-UFDFN	X1-DFN1006-2	-65°C ~ 125°C
SCS320AMC	Rohm Semiconductor	DIODE SIL CARB 650V 20A TO220FM Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max)	封装: -	库存1,494	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
HER302G-TP	Micro Commercial Co	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SMD18PLHE3-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 80 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	80 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 80 V	30pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
SMD14PE-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 1A SOD323HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	SOD-323HE	-55°C ~ 150°C
1N5819UR-1-TR	Microchip Technology	DIODE SCHOTTKY 45V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB (MELF, LL41)	-65°C ~ 125°C
GI752	NTE Electronics, Inc	DIODE GEN PURP 200V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	6A	900 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 200 V	150pF @ 4V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
BY135	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-41, Axial Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C	封装: -	Request a Quote	150 V	1A	1.3 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 150 V	-	Through Hole	DO-204AC, DO-41, Axial	DO-204AC (DO-41)	-50°C ~ 175°C
SR5010-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 100 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	封装: -	库存3,597	100 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
BYC30-1200PQ	WeEn Semiconductors	DIODE GEN PURP 1.2KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
S8MS-M3-H	Vishay	8A, 1000V, STD RECT , SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1000 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 1000 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
VS-E7FX0212HM3-I	Vishay	FREDS - SMF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 3 µA @ 1.2 kV Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	2A	2.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	3 µA @ 1.2 kV	-	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
FFSH40120A-F155	onsemi	1200V 40A SIC SBD Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 61A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 2250pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存2,505	1200 V	61A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2250pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
1N249	Microchip Technology	DIODE GEN PURP 100V 10A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	100 V	10A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	10 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C

BYS459B-1500E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 6.5A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 6.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 250µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,360

1500V

6.5A

1.3V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

250µA @ 1500V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

BYD13GGP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,200

400V

1A

-

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

8EWF06STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,832

600V

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

100µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

VS-80PFR120W

Vishay Semiconductor Diodes Division

DIODE STD REC 80A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存3,136

1200V

80A

1.4V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-55°C ~ 180°C

VS-1N3881

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存7,152

200V

6A

1.4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

15µA @ 200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

AR4PJ-M3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 77pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存5,936

600V

2A (DC)

1.6V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 600V

77pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

RU 1C

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 3V @ 250mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存2,944

1000V

200mA

3V @ 250mA

Small Signal =< 200mA (Io), Any Speed

400ns

10µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

SF31G A0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存7,392

50V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYW55-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

封装: SOD-57, Axial

库存3,328

800V

2A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 800V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SS2P3LHM3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-220AA

库存36,000

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

130pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

BYG21KHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存5,360

800V

1.5A

1.6V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

1µA @ 800V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SFT12G R0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存7,728

100V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

20pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

V35PWM15HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 150V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 150V
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,984

150V

35A

1.4V @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 150V

1620pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 175°C

SDUR3030W

SMC Diode Solutions

DIODE GEN PURP 300V 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-247-2

库存7,956

300V

30A

1.3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

5µA @ 300V

-

Through Hole

TO-247-2

TO-247AC

-55°C ~ 150°C

RS07B-GS08

Vishay Semiconductor Diodes Division

DIODE SW 100V DO-219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存13,956

100V

500mA

1.15V @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 100V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

CMDSH2-3 TR

Central Semiconductor Corp

DIODE SCHOTTKY 30V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 15pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

封装: SC-76, SOD-323

库存346,980

30V

200mA

550mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

15pF @ 10V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

BAT54LP-7

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C

封装: 2-UFDFN

库存144,000

30V

200mA (DC)

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

2-UFDFN

X1-DFN1006-2

-65°C ~ 125°C

SCS320AMC

Rohm Semiconductor

DIODE SIL CARB 650V 20A TO220FM

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)

封装: -

库存1,494

650 V

20A

1.5 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 650 V

1000pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

TO-220FM

175°C (Max)

HER302G-TP

Micro Commercial Co

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 100 V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SMD18PLHE3-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

80 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 80 V

30pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 125°C

SMD14PE-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 1A SOD323HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

SOD-323HE

-55°C ~ 150°C

1N5819UR-1-TR

Microchip Technology

DIODE SCHOTTKY 45V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

45 V

1A

490 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 45 V

70pF @ 5V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB (MELF, LL41)

-65°C ~ 125°C

GI752

NTE Electronics, Inc

DIODE GEN PURP 200V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

6A

900 mV @ 6 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

5 µA @ 200 V

150pF @ 4V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

BY135

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

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150 V

1A

1.3 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 150 V

-

Through Hole

DO-204AC, DO-41, Axial

DO-204AC (DO-41)

-50°C ~ 175°C

SR5010-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

库存3,597

100 V

5A

850 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 100 V

200pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

BYC30-1200PQ

WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: -

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1200 V

30A

3.3 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

65 ns

250 µA @ 1200 V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

S8MS-M3-H

Vishay

8A, 1000V, STD RECT , SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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1000 V

1.6A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

3.6 µs

10 µA @ 1000 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

VS-E7FX0212HM3-I

Vishay

FREDS - SMF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 3 µA @ 1.2 kV
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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1200 V

2A

2.5 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

3 µA @ 1.2 kV

-

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

FFSH40120A-F155

onsemi

1200V 40A SIC SBD

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 61A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: 2250pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存2,505

1200 V

61A

1.75 V @ 40 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

2250pF @ 1V, 100kHz

Through Hole

TO-247-2

-55°C ~ 175°C

1N249

Microchip Technology

DIODE GEN PURP 100V 10A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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100 V

10A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

10 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C