页 35 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CR5F-020 BK	Central Semiconductor Corp	DIODE GEN PURP 200V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AD, Axial	库存4,096	200V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
VS-8EWF04SPBF	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,552	400V	8A	1.2V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 400V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-65°C ~ 175°C
MBRB750HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,720	50V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
S70MR	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存7,984	1000V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
JAN1N4150UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AA	库存7,136	50V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N6676	Microsemi Corporation	DIODE SCHOTTKY 30V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-204AH, DO-35, Axial	库存2,608	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	50pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
XBS203V17R-G	Torex Semiconductor Ltd	DIODE SCHOTTKY 30V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 390mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: 125°C (Max)	封装: DO-214AC, SMA	库存204,000	30V	2A	390mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	3mA @ 30V	280pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	125°C (Max)
SS5P3-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 30V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存6,016	30V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 30V	280pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
AP01CWK	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存6,352	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	100µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
SR305 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存5,728	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CD214A-R11600	Bourns Inc.	DIODE GEN PURP 1.6KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AC, SMA	库存3,408	1600V	1A	1.25V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
RB160MM-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 125°C (Max)	封装: SOD-123F	库存3,792	30V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	Surface Mount	SOD-123F	PMDU	125°C (Max)
CD1408-R11000	Bourns Inc.	DIODE GEN PURP 1KV 1A 1408 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 1408 Operating Temperature - Junction: -65°C ~ 175°C	封装: Chip, Concave Terminals	库存3,824	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C
1N5819-G	Comchip Technology	DIODE SCHOTTKY 40V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存45,342	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N3622	Solid State Inc.	DIODE GEN PURP 600V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	600 V	16A	1.2 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
PCFG75N60SMW	onsemi	DIODE SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HS2GFSH	Taiwan Semiconductor Corporation	50NS, 2A, 400V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存42,000	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	25pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
IDC40D120T6MX1SA4	Infineon Technologies	DIODE GP 1.2KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	1200 V	75A	2.05 V @ 75 A	Standard Recovery >500ns, > 200mA (Io)	-	14 µA @ 1200 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
NRVBS215FA	onsemi	DIODE SCHOTTKY 150V 2A SOD123FA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 13 ns Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存9,873	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	13 ns	100 µA @ 150 V	48pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
SN1K	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 800V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 2 µA @ 800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	800 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	2 µA @ 800 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
CMR3-02-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
VS-E5TX1512THN3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 77.5 ns Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	15A	3.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	77.5 ns	50 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
HS3F-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	300 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
JANHCA1N5822	Microchip Technology	DIODE SCHOTTKY 40V 3A B AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 125°C
CDS6857-1-TR	Microchip Technology	SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UES1105E3	Microchip Technology	DIODE GEN PURP 300V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	-	Through Hole	Axial	A, Axial	-55°C ~ 150°C
S8K-M3-I	Vishay	8A, 800V, STD RECT, SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 800 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RFN5BGE6STL	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO252GE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C	封装: -	库存7,440	600 V	5A	1.55 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252GE	150°C
S2A_R1_00001	Panjit International Inc.	DIODE GEN PURP 50V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存2,040	50 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 50 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
SK210A	SMC Diode Solutions	DIODE SCHOTTKY 100V SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 240pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存6,690	100 V	-	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	240pF @ 5V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C

CR5F-020 BK

Central Semiconductor Corp

DIODE GEN PURP 200V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

库存4,096

200V

5A

1.3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

VS-8EWF04SPBF

Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,552

400V

8A

1.2V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 400V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-65°C ~ 175°C

MBRB750HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,720

50V

7.5A

750mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

S70MR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存7,984

1000V

70A

1.1V @ 70A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 180°C

JAN1N4150UR-1

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AA

库存7,136

50V

200mA (DC)

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Surface Mount

DO-213AA

-65°C ~ 175°C

1N6676

Microsemi Corporation

DIODE SCHOTTKY 30V 200MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-204AH, DO-35, Axial

库存2,608

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 30V

50pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

XBS203V17R-G

Torex Semiconductor Ltd

DIODE SCHOTTKY 30V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 390mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: 125°C (Max)

封装: DO-214AC, SMA

库存204,000

30V

2A

390mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

3mA @ 30V

280pF @ 1V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

125°C (Max)

SS5P3-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 30V
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存6,016

30V

5A

520mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 30V

280pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

AP01CWK

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存6,352

1000V

200mA

4V @ 200mA

Small Signal =< 200mA (Io), Any Speed

200ns

100µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

SR305 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存5,728

50V

3A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

CD214A-R11600

Bourns Inc.

DIODE GEN PURP 1.6KV 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AC, SMA

库存3,408

1600V

1A

1.25V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1600V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 175°C

RB160MM-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 125°C (Max)

封装: SOD-123F

库存3,792

30V

1A

480mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

-

Surface Mount

SOD-123F

PMDU

125°C (Max)

CD1408-R11000

Bourns Inc.

DIODE GEN PURP 1KV 1A 1408

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: 1408
Operating Temperature - Junction: -65°C ~ 175°C

封装: Chip, Concave Terminals

库存3,824

1000V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

1µA @ 1000V

12pF @ 4V, 1MHz

Surface Mount

Chip, Concave Terminals

1408

-65°C ~ 175°C

1N5819-G

Comchip Technology

DIODE SCHOTTKY 40V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存45,342

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

1N3622

Solid State Inc.

DIODE GEN PURP 600V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

600 V

16A

1.2 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

1 mA @ 600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

PCFG75N60SMW

onsemi

DIODE SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

HS2GFSH

Taiwan Semiconductor Corporation

50NS, 2A, 400V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存42,000

400 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 400 V

25pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

IDC40D120T6MX1SA4

Infineon Technologies

DIODE GP 1.2KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

1200 V

75A

2.05 V @ 75 A

Standard Recovery >500ns, > 200mA (Io)

-

14 µA @ 1200 V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

NRVBS215FA

onsemi

DIODE SCHOTTKY 150V 2A SOD123FA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13 ns
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存9,873

150 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

13 ns

100 µA @ 150 V

48pF @ 4V, 1MHz

Surface Mount

SOD-123W

SOD-123FA

-55°C ~ 150°C

SN1K

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 800V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

800 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

2 µA @ 800 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 175°C

CMR3-02-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

VS-E5TX1512THN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 77.5 ns
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

15A

3.3 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

77.5 ns

50 µA @ 1200 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

HS3F-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

300 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

80pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

JANHCA1N5822

Microchip Technology

DIODE SCHOTTKY 40V 3A B AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Through Hole

B, Axial

-65°C ~ 125°C

CDS6857-1-TR

Microchip Technology

SMALL-SIGNAL SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

UES1105E3

Microchip Technology

DIODE GEN PURP 300V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

300 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

-

Through Hole

Axial

A, Axial

-55°C ~ 150°C

S8K-M3-I

Vishay

8A, 800V, STD RECT, SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6 µs
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

1.6A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

3.6 µs

10 µA @ 800 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

RFN5BGE6STL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252GE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C

封装: -

库存7,440

600 V

5A

1.55 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252GE

150°C

S2A_R1_00001

Panjit International Inc.

DIODE GEN PURP 50V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存2,040

50 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 50 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

SK210A

SMC Diode Solutions

DIODE SCHOTTKY 100V SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: 240pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存6,690

100 V

-

850 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

240pF @ 5V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C