页 34 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRB16H50HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 730mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,184	50V	16A	730mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
RM50HG-12S	Powerex Inc.	DIODE GEN PURP 600V 50A TO264-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 4V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-264-3, TO-264AA	库存17,832	600V	50A	4V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 600V	-	Through Hole	TO-264-3, TO-264AA	-	-40°C ~ 150°C
15ETX06	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2	库存6,420	600V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
VS-71HFR140	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存3,120	1400V	70A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
MBR30100FCTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 30A 100V ITO220AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,968	-	-	-	-	-	-	-	-	-	-	-
UG8JHC0G	TSC America Inc.	DIODE, ULTRA FAST, 8A, 600V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存7,952	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SR810 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存7,360	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
31DF4 A0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-201AD, Axial	库存6,224	400V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
AS3PD-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2.1A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.1A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存4,368	200V	2.1A (DC)	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	10µA @ 200V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SF46G R0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存3,216	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MBR5H150VPB-G1	Diodes Incorporated	DIODE SCHOTTKY 150V 5A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: 175°C (Max)	封装: DO-201AA, DO-27, Axial	库存2,368	150V	5A	920mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	8µA @ 150V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	175°C (Max)
VS-3EJH02-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-221AC, SMA Flat Leads	库存7,424	200V	3A	930mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 200V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-65°C ~ 175°C
SK32BHM4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存5,968	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
BYM11-200HE3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AB, MELF (Glass)	库存4,416	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
FR151G B0G	TSC America Inc.	DIODE, FAST, 1.5A, 50V, 150NS, D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存2,288	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
MSASC150H45L	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	150A	600 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 150°C
HER207G-TP	Micro Commercial Co	DIODE GEN PURP 800V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	30pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
VS-C16CP07L-M3	Vishay General Semiconductor - Diodes Division	DIODE SIL CARB 650V 16A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 85 µA @ 650 V Capacitance @ Vr, F: 320pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	16A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	85 µA @ 650 V	320pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
FS1BFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
S4360	Microchip Technology	DIODE GEN PURP 600V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	600 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 600 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
ES8GC-HF	Comchip Technology	DIODE GEN PURP 400V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	90pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ER102_R2_00001	Panjit International Inc.	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存15,000	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
CD123D-B140R	Bourns Inc.	DIODE SCHOTTKY 40V 1A 123D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 123D Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存2,364	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	110pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	123D	-55°C ~ 125°C
JTXM19500-469-03	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NRVUD320W1T4G	onsemi	DIODE GEN PURP 200V 3A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-65°C ~ 175°C
1N1203A	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	300 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
ER301A_R2_00001	Panjit International Inc.	DIODE GEN PURP 150V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 150 V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MSASC150W45L-TR	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	150A	760 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 150°C
JANS1N6873UTK2	Microchip Technology	DIODE GEN PURP 400MA THINKEY2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	-	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
SBR10M100P5Q-13D	Diodes Incorporated	DIODE SBR 100V 10A POWERDI5 5K Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 245pF @ 4V Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	10A	880 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	2 µA @ 100 V	245pF @ 4V	Surface Mount	PowerDI™ 5	PowerDI™ 5	-55°C ~ 175°C

MBRB16H50HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,184

50V

16A

730mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

RM50HG-12S

Powerex Inc.

DIODE GEN PURP 600V 50A TO264-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 4V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-264-3, TO-264AA

库存17,832

600V

50A

4V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

100µA @ 600V

-

Through Hole

TO-264-3, TO-264AA

-

-40°C ~ 150°C

15ETX06

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2

库存6,420

600V

15A

3.2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

32ns

50µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

VS-71HFR140

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存3,120

1400V

70A

1.46V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

4.5mA @ 1400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 150°C

MBR30100FCTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 30A 100V ITO220AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,968

-

UG8JHC0G

TSC America Inc.

DIODE, ULTRA FAST, 8A, 600V, 25N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存7,952

600V

8A

2.9V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

30µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SR810 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存7,360

100V

8A

920mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

31DF4 A0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-201AD, Axial

库存6,224

400V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

20µA @ 400V

-

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

AS3PD-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.1A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.1A (DC)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存4,368

200V

2.1A (DC)

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

10µA @ 200V

37pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SF46G R0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存3,216

400V

4A

1.3V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

MBR5H150VPB-G1

Diodes Incorporated

DIODE SCHOTTKY 150V 5A DO27

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: 175°C (Max)

封装: DO-201AA, DO-27, Axial

库存2,368

150V

5A

920mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

8µA @ 150V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

175°C (Max)

VS-3EJH02-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-221AC, SMA Flat Leads

库存7,424

200V

3A

930mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 200V

-

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-65°C ~ 175°C

SK32BHM4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存5,968

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

BYM11-200HE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

库存4,416

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

FR151G B0G

TSC America Inc.

DIODE, FAST, 1.5A, 50V, 150NS, D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存2,288

50V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

MSASC150H45L

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

150A

600 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 mA @ 45 V

-

Surface Mount

ThinKey™3

-55°C ~ 150°C

HER207G-TP

Micro Commercial Co

DIODE GEN PURP 800V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

30pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

VS-C16CP07L-M3

Vishay General Semiconductor - Diodes Division

DIODE SIL CARB 650V 16A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

16A

1.7 V @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

85 µA @ 650 V

320pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

FS1BFL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 100 V

-

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SMA-FL)

-55°C ~ 150°C

S4360

Microchip Technology

DIODE GEN PURP 600V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

600 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 600 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

ES8GC-HF

Comchip Technology

DIODE GEN PURP 400V 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

90pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

ER102_R2_00001

Panjit International Inc.

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存15,000

200 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

CD123D-B140R

Bourns Inc.

DIODE SCHOTTKY 40V 1A 123D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: 123D
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存2,364

40 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

110pF @ 4V, 1MHz

Surface Mount

Chip, Concave Terminals

123D

-55°C ~ 125°C

JTXM19500-469-03

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

NRVUD320W1T4G

onsemi

DIODE GEN PURP 200V 3A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-65°C ~ 175°C

1N1203A

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

300 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 300 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

ER301A_R2_00001

Panjit International Inc.

DIODE GEN PURP 150V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

150 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 150 V

35pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

MSASC150W45L-TR

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

150A

760 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

-

Surface Mount

ThinKey™3

-55°C ~ 150°C

JANS1N6873UTK2

Microchip Technology

DIODE GEN PURP 400MA THINKEY2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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-

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

ThinKey™2

-65°C ~ 175°C

SBR10M100P5Q-13D

Diodes Incorporated

DIODE SBR 100V 10A POWERDI5 5K

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 245pF @ 4V
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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100 V

10A

880 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

18 ns

2 µA @ 100 V

245pF @ 4V

Surface Mount

PowerDI™ 5

-55°C ~ 175°C