页 245 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSB0.5A20	Microsemi Corporation	DIODE SCHOTTKY 20V 500MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-204AH, DO-35, Axial	库存5,232	20V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	60pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
1N6080US	Microsemi Corporation	DIODE GEN PURP 100V 2A G-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, G Supplier Device Package: G-MELF (D-5C) Operating Temperature - Junction: -65°C ~ 155°C	封装: SQ-MELF, G	库存2,800	100V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	-	Surface Mount	SQ-MELF, G	G-MELF (D-5C)	-65°C ~ 155°C
SL22HE3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存4,784	20V	2A	440mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
S3AB-13	Diodes Incorporated	DIODE GEN PURP 50V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存66,000	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
VS-10ETF06-M3	Vishay Semiconductor Diodes Division	DIODE RECT 600V 10A TO-220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-2	库存4,896	600V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
MUR8L60 C0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 600V, 65N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存7,264	600V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
UG58G A0G	TSC America Inc.	DIODE, ULTRA FAST, 5A, 600V, 20N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存2,384	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR201G A0G	TSC America Inc.	DIODE, FAST, 2A, 50V, 150NS, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存5,712	50V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
UG2JAHR3G	TSC America Inc.	DIODE, SUPER FAST, 2A, 600V, 40N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 2µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存4,352	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	2µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
C3D1P7060Q	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1.7A 10PQFN Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.7A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerTQFN Supplier Device Package: 10-Power QFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 160°C	封装: 10-PowerTQFN	库存2,176	600V	1.7A (DC)	1.7V @ 1.7A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	100pF @ 0V, 1MHz	Surface Mount	10-PowerTQFN	10-Power QFN (3.3x3.3)	-55°C ~ 160°C
RF505TF6S	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	封装: TO-220-2 Full Pack, Isolated Tab	库存22,884	600V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220NFM	150°C (Max)
VS-20TQ045SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 20A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存15,324	45V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7mA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
PDR3G-13	Diodes Incorporated	DIODE GEN PURP 400V 3A POWERDI5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	封装: PowerDI? 5	库存106,140	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	10µA @ 400V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
MURA115T3G	ON Semiconductor	DIODE GEN PURP 150V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AC, SMA	库存1,578,492	150V	2A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
P600G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	封装: P600, Axial	库存21,546	400V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 400V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
CDBC560-HF	Comchip Technology	DIODE SCHOTTKY 60V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -50°C ~ 150°C	封装: DO-214AB, SMC	库存194,100	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	380pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-50°C ~ 150°C
1N5401-TP	Micro Commercial Co	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存28,722	100V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER3L06G	Taiwan Semiconductor Corporation	75NS, 3A, 600V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 54pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	54pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ACDBQC0240LR-HF	Comchip Technology	AUTOMOTIVE DIODE SCHOTTKY 40V 0. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 0402C/SOD-923F Operating Temperature - Junction: -40°C ~ 125°C	封装: -	Request a Quote	40 V	200mA	580 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	25pF @ 1V, 1MHz	Surface Mount	0402 (1006 Metric)	0402C/SOD-923F	-40°C ~ 125°C
NTE5849	NTE Electronics, Inc	DIODE GEN PURP 1KV 3A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1000 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
PMEG3005EB-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 500MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 24pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	30 V	500mA	500 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	24pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C
SE8D20J-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 2A SLIMSMAW Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存41,910	600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-55°C ~ 175°C
MBR1545PS-TP	Micro Commercial Co	DIODE SCHOTTKY 45V 15A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	15A	550 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	-55°C ~ 150°C
SBRS5641NT3G	onsemi	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -	封装: -	Request a Quote	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	DO-214AA, SMB	SMB	-
S12GC	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存8,235	400 V	12A	-	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS12LH	Taiwan Semiconductor Corporation	1A, 20V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 20 V	-	Surface Mount	SOD-123	Sub SMA	-55°C ~ 125°C
10MQ100N-S	SMC Diode Solutions	100V, 1A, SMA, DIODE SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 36pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存59,970	100 V	1.5A	850 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	36pF @ 5V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
BAS40LP-7B	Diodes Incorporated	DIODE SCHOTTKY 40V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 30 V Capacitance @ Vr, F: 2.3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 30 V	2.3pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	X1-DFN1006-2	-55°C ~ 150°C
1N6858UR-1	Microchip Technology	SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	75mA	650 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	4.5pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
S2KB-HF	Comchip Technology	DIODE GP 800V 2A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C

DSB0.5A20

Microsemi Corporation

DIODE SCHOTTKY 20V 500MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 20V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-204AH, DO-35, Axial

库存5,232

20V

500mA

650mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 20V

60pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

1N6080US

Microsemi Corporation

DIODE GEN PURP 100V 2A G-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, G
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C

封装: SQ-MELF, G

库存2,800

100V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 100V

-

Surface Mount

SQ-MELF, G

G-MELF (D-5C)

-65°C ~ 155°C

SL22HE3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存4,784

20V

2A

440mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

S3AB-13

Diodes Incorporated

DIODE GEN PURP 50V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存66,000

50V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

VS-10ETF06-M3

Vishay Semiconductor Diodes Division

DIODE RECT 600V 10A TO-220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-2

库存4,896

600V

10A

1.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

100µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

MUR8L60 C0G

TSC America Inc.

DIODE, SUPER FAST, 8A, 600V, 65N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存7,264

600V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

5µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

UG58G A0G

TSC America Inc.

DIODE, ULTRA FAST, 5A, 600V, 20N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存2,384

600V

5A

2.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

30µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

FR201G A0G

TSC America Inc.

DIODE, FAST, 2A, 50V, 150NS, DO-

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存5,712

50V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

10pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

UG2JAHR3G

TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 40N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 2µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存4,352

600V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

2µA @ 600V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

C3D1P7060Q

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1.7A 10PQFN

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 100pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 10-PowerTQFN
Supplier Device Package: 10-Power QFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 160°C

封装: 10-PowerTQFN

库存2,176

600V

1.7A (DC)

1.7V @ 1.7A

No Recovery Time > 500mA (Io)

0ns

50µA @ 600V

100pF @ 0V, 1MHz

Surface Mount

10-PowerTQFN

10-Power QFN (3.3x3.3)

-55°C ~ 160°C

RF505TF6S

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

封装: TO-220-2 Full Pack, Isolated Tab

库存22,884

600V

5A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220NFM

150°C (Max)

VS-20TQ045SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.7mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存15,324

45V

20A

570mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.7mA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

PDR3G-13

Diodes Incorporated

DIODE GEN PURP 400V 3A POWERDI5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

封装: PowerDI? 5

库存106,140

400V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

3µs

10µA @ 400V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

MURA115T3G

ON Semiconductor

DIODE GEN PURP 150V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AC, SMA

库存1,578,492

150V

2A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 150V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

P600G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

封装: P600, Axial

库存21,546

400V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 400V

150pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

CDBC560-HF

Comchip Technology

DIODE SCHOTTKY 60V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 380pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-214AB, SMC

库存194,100

60V

5A

750mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

380pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-50°C ~ 150°C

1N5401-TP

Micro Commercial Co

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存28,722

100V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

HER3L06G

Taiwan Semiconductor Corporation

75NS, 3A, 600V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

600 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 600 V

54pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

ACDBQC0240LR-HF

Comchip Technology

AUTOMOTIVE DIODE SCHOTTKY 40V 0.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 0402C/SOD-923F
Operating Temperature - Junction: -40°C ~ 125°C

封装: -

Request a Quote

40 V

200mA

580 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 40 V

25pF @ 1V, 1MHz

Surface Mount

0402 (1006 Metric)

0402C/SOD-923F

-40°C ~ 125°C

NTE5849

NTE Electronics, Inc

DIODE GEN PURP 1KV 3A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

1000 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

PMEG3005EB-QX

Nexperia USA Inc.

DIODE SCHOTTKY 30V 500MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: 24pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

30 V

500mA

500 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 30 V

24pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C

SE8D20J-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 2A SLIMSMAW

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存41,910

600 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 600 V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-55°C ~ 175°C

MBR1545PS-TP

Micro Commercial Co

DIODE SCHOTTKY 45V 15A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

15A

550 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

-55°C ~ 150°C

SBRS5641NT3G

onsemi

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -

封装: -

Request a Quote

40 V

1A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

DO-214AA, SMB

SMB

-

S12GC

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存8,235

400 V

12A

-

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

78pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SS12LH

Taiwan Semiconductor Corporation

1A, 20V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

20 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 20 V

-

Surface Mount

SOD-123

Sub SMA

-55°C ~ 125°C

10MQ100N-S

SMC Diode Solutions

100V, 1A, SMA, DIODE SCHOTTKY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 36pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存59,970

100 V

1.5A

850 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

36pF @ 5V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

BAS40LP-7B

Diodes Incorporated

DIODE SCHOTTKY 40V 200MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Capacitance @ Vr, F: 2.3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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40 V

200mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

200 nA @ 30 V

2.3pF @ 0V, 1MHz

Surface Mount

0402 (1006 Metric)

X1-DFN1006-2

-55°C ~ 150°C

1N6858UR-1

Microchip Technology

SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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50 V

75mA

650 mV @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

4.5pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

S2KB-HF

Comchip Technology

DIODE GP 800V 2A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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800 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C