页 1661 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-VSKE270-08	Vishay Semiconductor Diodes Division	DIODE MODULE 800V MAGN-A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 270A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: MAGN-A-PAK (3) Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -	封装: MAGN-A-PAK (3)	库存4,080	800V	270A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis Mount	MAGN-A-PAK (3)	MAGN-A-PAK?	-
BYT12PI-1000RG	STMicroelectronics	DIODE GEN PURP 1KV 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 155ns Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: TO220AC Isolated Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-2 Isolated Tab	库存5,504	1000V	12A	1.9V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	155ns	50µA @ 1000V	-	Through Hole	TO-220-2 Isolated Tab	TO220AC Isolated	-40°C ~ 150°C
R6021022PSYA	Powerex Inc.	DIODE GEN PURP 1KV 220A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 220A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	封装: DO-205AB, DO-9, Stud	库存2,448	1000V	220A	2.75V @ 800A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50mA @ 1000V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
1N5186US	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: B, Axial	库存5,296	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	2µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
UGF8BT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack, Isolated Tab	库存5,584	100V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
SS15P3S-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 15A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 570mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: 200°C (Max)	封装: TO-277, 3-PowerDFN	库存2,032	30V	15A	570mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	200°C (Max)
STPS2L60UF	STMicroelectronics	DIODE SCHOTTKY 60V 2A SMBFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBflat Operating Temperature - Junction: 150°C (Max)	封装: DO-221AA, SMB Flat Leads	库存13,320	60V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBflat	150°C (Max)
VSSA210-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 1.7A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-214AC, SMA	库存7,696	100V	1.7A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	175pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
ESH1D-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AC, SMA	库存304,800	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S2DHR5G	TSC America Inc.	DIODE, 2A, 200V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存3,840	200V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UF1D A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存7,120	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SFT15G R0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存2,000	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N5418C.TR	Semtech Corporation	DIODE GEN PURP 400V 4.5A AXIAL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,408	-	-	-	-	-	-	-	-	-	-	-
VS-10ETS08PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-2	库存21,816	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
VS-2EFH02-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-219AB	库存6,384	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 200V	-	Surface Mount	DO-219AB	DO-219AB (SMF)	-65°C ~ 175°C
CGRM4004-HF	Comchip Technology	DIODE GEN PURP 400V 1A SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: Mini SMA/SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123T	库存6,496	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	SOD-123T	Mini SMA/SOD-123	-55°C ~ 150°C
NRVBM140T1G	ON Semiconductor	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存17,880	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
SBR05U20LP-7	Diodes Incorporated	DIODE SBR 20V 500MA 2DFN Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	封装: 2-UFDFN	库存2,560,680	20V	500mA	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 20V	-	Surface Mount	2-UFDFN	X1-DFN1006-2	-65°C ~ 150°C
CDBQR0230R	Comchip Technology	DIODE SCHOTTKY 30V 200MA 0402 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402/SOD-923F Operating Temperature - Junction: 125°C (Max)	封装: 0402 (1005 Metric)	库存158,172	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	0402 (1005 Metric)	0402/SOD-923F	125°C (Max)
1N5408-T	Diodes Incorporated	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AD, Axial	库存14,400	1000V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
B340-13-F	Diodes Incorporated	DIODE SCHOTTKY 40V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AB, SMC	库存2,727,180	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
NTE6046	NTE Electronics, Inc	DIODE GEN PURP 1KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封装: -	Request a Quote	1000 V	85A	1.75 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	100 µA @ 1000 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-40°C ~ 125°C
SS34C-HF	Comchip Technology	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	450pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5310	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S3GC-HF	Comchip Technology	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
GSD2004W-HE3_A-08	Vishay	SWITCHING DIODE GENPURP SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 240 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	240 V	300mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 240 V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
ACGRTS4007-HF	Comchip Technology	DIODE GP 1KV 1A TS/SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: TS/SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存106,641	1000 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	TS/SOD-123FL	-55°C ~ 150°C
C6D50065H	Wolfspeed, Inc.	SIC, SCHOTTKY DIODE, 50A, 650V, Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 136A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存2,085	650 V	136A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	-	100 µA @ 650 V	2819pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
1N5811U4	Microchip Technology	DIODE GEN PURP 150V 6A U4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 525 µs Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	150 V	6A	925 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	525 µs	5 µA @ 150 V	-	Surface Mount	3-SMD, No Lead	U4	-65°C ~ 175°C
CRSH30-4	Central Semiconductor Corp	DIODE SCHOTTKY 40V 30A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 40 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -	封装: -	Request a Quote	40 V	30A	630 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 40 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-

VS-VSKE270-08

Vishay Semiconductor Diodes Division

DIODE MODULE 800V MAGN-A-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 270A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: MAGN-A-PAK (3)
Supplier Device Package: MAGN-A-PAK?
Operating Temperature - Junction: -

封装: MAGN-A-PAK (3)

库存4,080

800V

270A

-

Standard Recovery >500ns, > 200mA (Io)

-

Chassis Mount

MAGN-A-PAK (3)

MAGN-A-PAK?

-

BYT12PI-1000RG

STMicroelectronics

DIODE GEN PURP 1KV 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 155ns
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: TO220AC Isolated
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-2 Isolated Tab

库存5,504

1000V

12A

1.9V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

155ns

50µA @ 1000V

-

Through Hole

TO-220-2 Isolated Tab

TO220AC Isolated

-40°C ~ 150°C

R6021022PSYA

Powerex Inc.

DIODE GEN PURP 1KV 220A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 220A
Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 50mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -45°C ~ 150°C

封装: DO-205AB, DO-9, Stud

库存2,448

1000V

220A

2.75V @ 800A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

50mA @ 1000V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-45°C ~ 150°C

1N5186US

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: B, Axial

库存5,296

100V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

2µA @ 100V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

UGF8BT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack, Isolated Tab

库存5,584

100V

8A

1V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 100V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

SS15P3S-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 15A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)

封装: TO-277, 3-PowerDFN

库存2,032

30V

15A

570mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

200°C (Max)

STPS2L60UF

STMicroelectronics

DIODE SCHOTTKY 60V 2A SMBFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)

封装: DO-221AA, SMB Flat Leads

库存13,320

60V

2A

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

DO-221AA, SMB Flat Leads

SMBflat

150°C (Max)

VSSA210-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.7A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-214AC, SMA

库存7,696

100V

1.7A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

175pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-40°C ~ 150°C

ESH1D-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AC, SMA

库存304,800

200V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

S2DHR5G

TSC America Inc.

DIODE, 2A, 200V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存3,840

200V

2A

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1µA @ 200V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

UF1D A0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存7,120

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SFT15G R0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存2,000

300V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

1N5418C.TR

Semtech Corporation

DIODE GEN PURP 400V 4.5A AXIAL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,408

-

VS-10ETS08PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-2

库存21,816

800V

10A

1.1V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

VS-2EFH02-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-219AB

库存6,384

200V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 200V

-

Surface Mount

DO-219AB

DO-219AB (SMF)

-65°C ~ 175°C

CGRM4004-HF

Comchip Technology

DIODE GEN PURP 400V 1A SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: Mini SMA/SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123T

库存6,496

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Surface Mount

SOD-123T

Mini SMA/SOD-123

-55°C ~ 150°C

NRVBM140T1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存17,880

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

SBR05U20LP-7

Diodes Incorporated

DIODE SBR 20V 500MA 2DFN

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

封装: 2-UFDFN

库存2,560,680

20V

500mA

500mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 20V

-

Surface Mount

2-UFDFN

X1-DFN1006-2

-65°C ~ 150°C

CDBQR0230R

Comchip Technology

DIODE SCHOTTKY 30V 200MA 0402

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402/SOD-923F
Operating Temperature - Junction: 125°C (Max)

封装: 0402 (1005 Metric)

库存158,172

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

0402 (1005 Metric)

0402/SOD-923F

125°C (Max)

1N5408-T

Diodes Incorporated

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

库存14,400

1000V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

25pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

B340-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AB, SMC

库存2,727,180

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 125°C

NTE6046

NTE Electronics, Inc

DIODE GEN PURP 1KV 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封装: -

Request a Quote

1000 V

85A

1.75 V @ 267 A

Standard Recovery >500ns, > 200mA (Io)

1 µs

100 µA @ 1000 V

-

Stud Mount

DO-203AA, DO-5, Stud

DO-5

-40°C ~ 125°C

SS34C-HF

Comchip Technology

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

450pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

S5310

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

S3GC-HF

Comchip Technology

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 400 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

GSD2004W-HE3_A-08

Vishay

SWITCHING DIODE GENPURP SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 240 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

240 V

300mA

1 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 240 V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C

ACGRTS4007-HF

Comchip Technology

DIODE GP 1KV 1A TS/SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: TS/SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存106,641

1000 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

6pF @ 4V, 1MHz

Surface Mount

SOD-123F

TS/SOD-123FL

-55°C ~ 150°C

C6D50065H

Wolfspeed, Inc.

SIC, SCHOTTKY DIODE, 50A, 650V,

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 136A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存2,085

650 V

136A

1.5 V @ 20 A

No Recovery Time > 500mA (Io)

-

100 µA @ 650 V

2819pF @ 0V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

1N5811U4

Microchip Technology

DIODE GEN PURP 150V 6A U4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

150 V

6A

925 mV @ 6 A

Standard Recovery >500ns, > 200mA (Io)

525 µs

5 µA @ 150 V

-

Surface Mount

3-SMD, No Lead

U4

-65°C ~ 175°C

CRSH30-4

Central Semiconductor Corp

DIODE SCHOTTKY 40V 30A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -

封装: -

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40 V

30A

630 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 mA @ 40 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

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