页 1658 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N6392
Microsemi Corporation

DIODE SCHOTTKY 45V 54A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 54A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-203AB, DO-5, Stud
库存6,640
45V
54A
680mV @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
3000pF @ 5V, 1MHz
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-55°C ~ 175°C
SD103C-A-F
Diodes Incorporated

DIODE SCHOTTKY 20V 350MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 10V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 125°C (Max)
封装: DO-204AH, DO-35, Axial
库存5,920
20V
350mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 10V
50pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
D6020L55
Littelfuse Inc.

DIODE GEN PURP 600V 12.7A TO220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 12.7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab, Formed Leads
  • Supplier Device Package: TO-220 Isolated Tab
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: TO-220-3 Isolated Tab, Formed Leads
库存3,536
600V
12.7A
1.6V @ 12.7A
Standard Recovery >500ns, > 200mA (Io)
4µs
10µA @ 600V
-
Through Hole
TO-220-3 Isolated Tab, Formed Leads
TO-220 Isolated Tab
-40°C ~ 125°C
RS3J-13
Diodes Incorporated

DIODE GEN PURP 600V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AB, SMC
库存5,152
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 150°C
hot MA3X152K0L
Panasonic Electronic Components

DIODE GEN PURP 80V 100MA MINI3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-236-3, SC-59, SOT-23-3
库存214,512
80V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
3ns
100nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
150°C (Max)
VS-95SQ015
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 9A DO204AR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 310mV @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7mA @ 15V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 100°C
封装: DO-204AR, Axial
库存4,032
15V
9A
310mV @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
-
7mA @ 15V
-
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 100°C
SET010211
Semtech Corporation

DIODE GEN PURP 150V 15A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: Module
库存3,792
150V
15A
1.1V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
-
Chassis, Stud Mount
Module
-
-55°C ~ 150°C
LS411460
Powerex Inc.

DIODE MODULE 1.4KV 600A POWRBLOK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK? Module
  • Supplier Device Package: POW-R-BLOK? Module
  • Operating Temperature - Junction: -
封装: POW-R-BLOK? Module
库存4,208
1400V
600A
1.19V @ 1800A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 1400V
-
Chassis Mount
POW-R-BLOK? Module
POW-R-BLOK? Module
-
CDLL6760
Microsemi Corporation

DIODE SCHOTTKY 80V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-213AB, MELF
库存5,440
80V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 80V
-
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 125°C
CMR1U-04 BK
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AA, SMB
库存3,952
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
hot STPS2L30UF
STMicroelectronics

DIODE SCHOTTKY 30V 2A SMBFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat
  • Operating Temperature - Junction: 150°C (Max)
封装: DO-221AA, SMB Flat Leads
库存39,432
30V
2A
450mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat
150°C (Max)
SR005HA0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存5,968
50V
500mA
700mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
BAL99-G3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 250MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 70V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-236-3, SC-59, SOT-23-3
库存2,128
70V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
2.5µA @ 70V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
2833880
Phoenix Contact

DIODE MODULE W/VARISTOR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Pluggable into DIN Rail Base
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封装: Module
库存4,160
-
-
-
-
-
-
-
Pluggable into DIN Rail Base
Module
Module
-
hot GL34J-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-213AA (Glass)
库存60,000
600V
500mA
1.3V @ 500mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
NXPSC06650Q
WeEn Semiconductors

DIODE SCHOTTKY 650V 6A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 650V
  • Capacitance @ Vr, F: 190pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
封装: TO-220-2
库存51,468
650V
6A
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 650V
190pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
SBAS16XV2T1G
ON Semiconductor

DIODE GEN PURP 75V 200MA SOD523

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: SC-79, SOD-523
库存85,542
75V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 150°C
VSKY05201006-G4-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY CLP1006-G4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75µA @ 20V
  • Capacitance @ Vr, F: 150pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: CLP1006-2L
  • Operating Temperature - Junction: 150°C (Max)
封装: 0402 (1006 Metric)
库存76,284
20V
500mA
430mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
75µA @ 20V
150pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
CLP1006-2L
150°C (Max)
SCS206AJHRTLL
Rohm Semiconductor

DIODE SIL CARB 650V 6A TO263AB

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 600 V
  • Capacitance @ Vr, F: 219pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 175°C (Max)
封装: -
库存8,328
650 V
6A
1.55 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 600 V
219pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
175°C (Max)
S1JH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存40,800
600 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
1 µA @ 600 V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
SD2114S020S3R0
KYOCERA AVX

SCHOTTKY DIODES

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
Request a Quote
20 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
-
Surface Mount
1206 (3216 Metric)
1206
-55°C ~ 125°C
W2624NC240
IXYS

DIODE GEN PURP 2.4KV 2624A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 2624A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -
封装: -
Request a Quote
2400 V
2624A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AC, K-PUK
W5
-
DSC06A065
Diodes Incorporated

SILICON CARBIDE RECTIFIER TO220A

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 650 V
  • Capacitance @ Vr, F: 272pF @ 100mV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存138
650 V
6A
1.5 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 650 V
272pF @ 100mV, 1MHz
Through Hole
TO-220-2
TO220AC (Type WX)
-55°C ~ 175°C
1N4255SM
Microchip Technology

DIODE GP 2KV 250MA S SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 100 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, S
  • Supplier Device Package: S, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
2000 V
250mA
3.5 V @ 100 mA
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 2000 V
-
Surface Mount
SQ-MELF, S
S, SQ-MELF
-65°C ~ 175°C
1SS405
Diotec Semiconductor

IC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 20 V
  • Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
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20 V
50mA
550 mV @ 50 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500 nA @ 20 V
3.9pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 125°C
SURD109-4T4
onsemi

REC DPAK SPECIAL ULTFST

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
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-
-
-
-
-
-
-
-
-
-
-
RFN3BM6SFHTL
Rohm Semiconductor

DIODE GEN PURP 600V 3A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存7,488
600 V
3A
1.55 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)
S4210IL
Microchip Technology

DIODE GEN PURP 100V 125A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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100 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
SF58G-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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600 V
5A
1.75 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
NC1D120C20KTNG
NextGen Components

SiC Schottky 1200V 20A TO247- 2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 1371pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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1200 V
20A
1.6 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
1371pF @ 0V, 1MHz
Through Hole
TO-247-2
TO-247-2L
-55°C ~ 175°C