页 1504 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IRD3CH31DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,424	-	-	-	-	-	-	-	-	-	-	-
GP10M-5400M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,320	-	-	-	-	-	-	-	-	-	-	-
GP10T-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.3KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1300V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存7,440	1300V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1300V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
RS1PG-E3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-220AA	库存36,000	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SBL550	Diodes Incorporated	DIODE SCHOTTKY 50V 5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2	库存6,688	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
VS-T70HFL20S02	Vishay Semiconductor Diodes Division	DIODE MODULE 200V 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	封装: D-55 T-Module	库存4,752	200V	70A	-	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 200V	-	Chassis Mount	D-55 T-Module	D-55	-
FR12JR05	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存7,968	600V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
SBRT10M50SP5-13	Diodes Incorporated	DIODE SBR 50V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	封装: PowerDI? 5	库存3,664	50V	10A	470mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	150µA @ 50V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
V8P6-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 4.2A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 4.2A Voltage - Forward (Vf) (Max) @ If: 610mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存2,640	60V	4.2A	610mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 60V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
FR3DTA	SMC Diode Solutions	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AB, SMC	库存2,208	200V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 150°C
SS23L RFG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存5,392	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
TSP15U120S S1G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 15A, 12 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存3,600	120V	15A	750mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
US2BA	Fairchild/ON Semiconductor	DIODE GP 100V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存6,000	100V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
JANTXV1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: 35pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: A, Axial	库存7,212	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
NTE6104	NTE Electronics, Inc	DIODE GEN PURP 1.2KV 300A T-70 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 µs Current - Reverse Leakage @ Vr: 50 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: Stud Supplier Device Package: T-70 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1200 V	300A	2.15 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	9 µs	50 mA @ 1200 V	-	Stud Mount	Stud	T-70	-65°C ~ 200°C
JANTX1N6080-TR	Microchip Technology	DIODE GP REV 100V 2A G AXIAL Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: G, Axial Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C	封装: -	Request a Quote	100 V	2A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	-	Through Hole	G, Axial	G, Axial	-65°C ~ 155°C
PSDF0860L1_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存5,970	600 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	100 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
R704	Microchip Technology	DIODE GEN PURP 400V 15A TO204AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 1 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	400 V	15A	1.4 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	1 mA @ 400 V	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)	-65°C ~ 150°C
US3A	Diotec Semiconductor	ULTRAFAST SMC 50V 3A 50NS 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	50 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
JAN1N3649R	Microchip Technology	DIODE GEN PURP 800V DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	800 V	-	2.2 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
PNE20060EPEZ	Nexperia USA Inc.	DIODE GEN PURP 200V 6A CFP15B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	封装: -	库存29,460	200 V	6A	940 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 200 V	65pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
IDD09SG60CXTMA2	Infineon Technologies	DIODE SIL CARB 600V 9A TO252-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 80 µA @ 600 V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	9A	2.1 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 600 V	280pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
1N4532-TR	Microchip Technology	DIODE GEN PURP 50V 125MA DO34 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	50 V	125mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	30 ns	100 nA @ 50 V	-	Through Hole	DO-204AG, DO-34, Axial	DO-34	-55°C ~ 175°C
SBR8U60P5Q-13	Diodes Incorporated	DIODE SBR 60V 8A POWERDI5 T&R Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 330 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	60 V	8A	530 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	330 µA @ 60 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-55°C ~ 150°C
FR504GP-AP	Micro Commercial Co	DIODE GEN PURP 400V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 400 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
VS-E5TH1506-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 38 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存21,132	600 V	15A	1.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	38 ns	10 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
RS1FLM-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存80,880	1000 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	7pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
HER157GH	Taiwan Semiconductor Corporation	75NS, 1.5A, 800V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存10,500	800 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ER802_T0_00001	Panjit International Inc.	DIODE GEN PURP 200V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存1,317	200 V	8A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
NA03QSA045	KYOCERA AVX	DIODE SCHOTTKY 45V 3A NA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: NA (DO-221BC) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	45 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	NA (DO-221BC)	-40°C ~ 150°C

IRD3CH31DB6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,424

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GP10M-5400M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,320

-

GP10T-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1300V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存7,440

1300V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1300V

5pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

RS1PG-E3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-220AA

库存36,000

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

9pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

SBL550

Diodes Incorporated

DIODE SCHOTTKY 50V 5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2

库存6,688

50V

5A

700mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

VS-T70HFL20S02

Vishay Semiconductor Diodes Division

DIODE MODULE 200V 70A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

封装: D-55 T-Module

库存4,752

200V

70A

-

Fast Recovery =< 500ns, > 200mA (Io)

200ns

100µA @ 200V

-

Chassis Mount

D-55 T-Module

D-55

-

FR12JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存7,968

600V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

SBRT10M50SP5-13

Diodes Incorporated

DIODE SBR 50V 10A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

封装: PowerDI? 5

库存3,664

50V

10A

470mV @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

150µA @ 50V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

V8P6-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4.2A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 4.2A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存2,640

60V

4.2A

610mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 60V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

FR3DTA

SMC Diode Solutions

DIODE GEN PURP 200V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AB, SMC

库存2,208

200V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 150°C

SS23L RFG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存5,392

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

TSP15U120S S1G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 15A, 12

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存3,600

120V

15A

750mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

US2BA

Fairchild/ON Semiconductor

DIODE GP 100V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存6,000

100V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

JANTXV1N5617

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: A, Axial

库存7,212

400V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 400V

35pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

NTE6104

NTE Electronics, Inc

DIODE GEN PURP 1.2KV 300A T-70

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 1500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: Stud
Supplier Device Package: T-70
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

1200 V

300A

2.15 V @ 1500 A

Standard Recovery >500ns, > 200mA (Io)

9 µs

50 mA @ 1200 V

-

Stud Mount

Stud

T-70

-65°C ~ 200°C

JANTX1N6080-TR

Microchip Technology

DIODE GP REV 100V 2A G AXIAL

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: G, Axial
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C

封装: -

Request a Quote

100 V

2A

1.5 V @ 37.7 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 100 V

-

Through Hole

G, Axial

-65°C ~ 155°C

PSDF0860L1_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存5,970

600 V

8A

1.8 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

90 ns

100 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

R704

Microchip Technology

DIODE GEN PURP 400V 15A TO204AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 1 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

400 V

15A

1.4 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

1 mA @ 400 V

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

-65°C ~ 150°C

US3A

Diotec Semiconductor

ULTRAFAST SMC 50V 3A 50NS 150C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

50 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 50 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

JAN1N3649R

Microchip Technology

DIODE GEN PURP 800V DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

800 V

-

2.2 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

PNE20060EPEZ

Nexperia USA Inc.

DIODE GEN PURP 200V 6A CFP15B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

封装: -

库存29,460

200 V

6A

940 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 200 V

65pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C

IDD09SG60CXTMA2

Infineon Technologies

DIODE SIL CARB 600V 9A TO252-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

9A

2.1 V @ 9 A

No Recovery Time > 500mA (Io)

0 ns

80 µA @ 600 V

280pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

1N4532-TR

Microchip Technology

DIODE GEN PURP 50V 125MA DO34

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

50 V

125mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

30 ns

100 nA @ 50 V

-

Through Hole

DO-204AG, DO-34, Axial

DO-34

-55°C ~ 175°C

SBR8U60P5Q-13

Diodes Incorporated

DIODE SBR 60V 8A POWERDI5 T&R

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

60 V

8A

530 mV @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

330 µA @ 60 V

-

Surface Mount

PowerDI™ 5

-55°C ~ 150°C

FR504GP-AP

Micro Commercial Co

DIODE GEN PURP 400V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 400 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

VS-E5TH1506-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存21,132

600 V

15A

1.6 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

38 ns

10 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

RS1FLM-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存80,880

1000 V

1A

1.2 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

7pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

HER157GH

Taiwan Semiconductor Corporation

75NS, 1.5A, 800V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存10,500

800 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

ER802_T0_00001

Panjit International Inc.

DIODE GEN PURP 200V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存1,317

200 V

8A

950 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

NA03QSA045

KYOCERA AVX

DIODE SCHOTTKY 45V 3A NA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: NA (DO-221BC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

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45 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

-

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

NA (DO-221BC)

-40°C ~ 150°C