页 1502 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4003 TR	Central Semiconductor Corp	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,312	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
GP30DLHE3/72	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AD, Axial	库存2,320	200V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
SRP100K-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 125°C	封装: DO-204AL, DO-41, Axial	库存4,128	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 800V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 125°C
STTA306B-TR	STMicroelectronics	DIODE GEN PURP 600V 3A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 125°C (Max)	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存24,000	600V	3A	1.85V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	125°C (Max)
PS410825	Powerex Inc.	DIODE MODULE 800V 2500A POWRBLOK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2500A Voltage - Forward (Vf) (Max) @ If: 1V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 22µs Current - Reverse Leakage @ Vr: 200mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: POW-R-BLOK? Module Supplier Device Package: POW-R-BLOK? Module Operating Temperature - Junction: -	封装: POW-R-BLOK? Module	库存2,144	800V	2500A	1V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	22µs	200mA @ 800V	-	Chassis Mount	POW-R-BLOK? Module	POW-R-BLOK? Module	-
S3HVM10	Semtech Corporation	DIODE GEN PURP 10KV 1.2A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 10000V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 11.5V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 1µA @ 10000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: Module	库存4,064	10000V	1.2A	11.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	2.5µs	1µA @ 10000V	-	Chassis, Stud Mount	Module	-	-55°C ~ 150°C
A197M	Powerex Inc.	DIODE GEN PURP 600V 250A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-205AB, DO-9, Stud	库存2,736	600V	250A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	-	-40°C ~ 150°C
HSM5100JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AB, SMC	库存6,352	100V	5A	800mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
VBT3045BP-M3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 45V TO-263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,088	45V	30A (DC)	700mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
VIT760-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 7.5A 60V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存5,536	60V	7.5A	800mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 60V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-55°C ~ 150°C
VS-30BQ015HM3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 350mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 15V Capacitance @ Vr, F: 1120pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AB, SMC	库存7,680	15V	3A	350mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 15V	1120pF @ 5V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
RSFMLHRVG	TSC America Inc.	DIODE, FAST, 0.5A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存2,960	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
PD3S0230-7	Diodes Incorporated	DIODE SCHOTTKY 30V POWERDI323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10.7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: PowerDI? 323 Supplier Device Package: PowerDI? 323 Operating Temperature - Junction: -65°C ~ 125°C	封装: PowerDI? 323	库存636,348	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10.7pF @ 1V, 1MHz	Surface Mount	PowerDI? 323	PowerDI? 323	-65°C ~ 125°C
CDBA260-HF	Comchip Technology	DIODE SCHOTTKY 60V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	封装: DO-214AC, SMA	库存49,314	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
V2F22HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 2A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 200 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	200 V	2A	870 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 200 V	160pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
S1MWFM-7	Diodes Incorporated	DIODE GEN PURP 1KV 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存6,708	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 µA @ 1000 V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
S8KS-M3-I	Vishay	8A, 800V, STD RECT, SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 800 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
W1411LC320	IXYS	DIODE GEN PURP 3.2KV 1411A W4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3200 V Current - Average Rectified (Io): 1411A Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 3200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: W4 Operating Temperature - Junction: -55°C ~ 160°C	封装: -	Request a Quote	3200 V	1411A	2 V @ 2870 A	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 3200 V	-	Clamp On	DO-200AB, B-PUK	W4	-55°C ~ 160°C
S5MB_R1_00601	Panjit International Inc.	SURFACE GENERAL PURPOSE RECTIFIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1 kV Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存9,600	1000 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1 kV	35pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
B5819WSL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323FL Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	40 V	1A	600 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 40 V	120pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323FL	-65°C ~ 125°C
UES1003-TR	Microchip Technology	DIODE GEN PURP 150V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	150 V	1A	975 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	-	-	Through Hole	A, Axial	A, Axial	-55°C ~ 175°C
V12P6HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	库存17,580	60 V	12A	610 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.9 mA @ 60 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
US2MFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	1000 V	2A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	28pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-50°C ~ 150°C
VS-8ETH03SHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 300V 8A TO262AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	300 V	8A	1.25 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 300 V	-	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262AA	-55°C ~ 175°C
BAX12-BK	Central Semiconductor Corp	DIODE AVALANCHE 90V 400MA DO35 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 90 V Capacitance @ Vr, F: 35pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	90 V	400mA	1.25 V @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 90 V	35pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
US3GB-HF	Comchip Technology	DIODE GP 400V 3A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
SDS120J002C3-ISATH	Luminus Devices Inc.	DIODE 1200V-2A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 11A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 8 µA @ 1.2 kV Capacitance @ Vr, F: 165pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	11A	1.5 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 1.2 kV	165pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
BAT54T-7-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 10V, 1MHz	Surface Mount	SOT-523	SOT-523	-65°C ~ 150°C
SK15BH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BAS21QAZ	Nexperia USA Inc.	DIODE GP 250V 330MA DFN1010D-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 330mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max)	封装: -	库存43,596	250 V	330mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	2pF @ 0V, 1MHz	Surface Mount	3-XDFN Exposed Pad	DFN1010D-3	150°C (Max)

1N4003 TR

Central Semiconductor Corp

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,312

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

GP30DLHE3/72

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AD, Axial

库存2,320

200V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 200V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

SRP100K-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C

封装: DO-204AL, DO-41, Axial

库存4,128

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 800V

12pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 125°C

STTA306B-TR

STMicroelectronics

DIODE GEN PURP 600V 3A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 125°C (Max)

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存24,000

600V

3A

1.85V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

125°C (Max)

PS410825

Powerex Inc.

DIODE MODULE 800V 2500A POWRBLOK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 2500A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22µs
Current - Reverse Leakage @ Vr: 200mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: POW-R-BLOK? Module
Supplier Device Package: POW-R-BLOK? Module
Operating Temperature - Junction: -

封装: POW-R-BLOK? Module

库存2,144

800V

2500A

1V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

22µs

200mA @ 800V

-

Chassis Mount

POW-R-BLOK? Module

-

S3HVM10

Semtech Corporation

DIODE GEN PURP 10KV 1.2A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 10000V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 11.5V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 1µA @ 10000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: Module

库存4,064

10000V

1.2A

11.5V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

2.5µs

1µA @ 10000V

-

Chassis, Stud Mount

Module

-

-55°C ~ 150°C

A197M

Powerex Inc.

DIODE GEN PURP 600V 250A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-205AB, DO-9, Stud

库存2,736

600V

250A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

-

-40°C ~ 150°C

HSM5100JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 100V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AB, SMC

库存6,352

100V

5A

800mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

VBT3045BP-M3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 45V TO-263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,088

45V

30A (DC)

700mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

VIT760-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 7.5A 60V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存5,536

60V

7.5A

800mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 60V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-55°C ~ 150°C

VS-30BQ015HM3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 350mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 15V
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AB, SMC

库存7,680

15V

3A

350mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

4mA @ 15V

1120pF @ 5V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

RSFMLHRVG

TSC America Inc.

DIODE, FAST, 0.5A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存2,960

-

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

PD3S0230-7

Diodes Incorporated

DIODE SCHOTTKY 30V POWERDI323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10.7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: PowerDI? 323
Supplier Device Package: PowerDI? 323
Operating Temperature - Junction: -65°C ~ 125°C

封装: PowerDI? 323

库存636,348

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10.7pF @ 1V, 1MHz

Surface Mount

PowerDI? 323

-65°C ~ 125°C

CDBA260-HF

Comchip Technology

DIODE SCHOTTKY 60V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-214AC, SMA

库存49,314

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 150°C

V2F22HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 2A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

200 V

2A

870 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

60 µA @ 200 V

160pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-40°C ~ 175°C

S1MWFM-7

Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存6,708

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

3 µs

5 µA @ 1000 V

4pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

S8KS-M3-I

Vishay

8A, 800V, STD RECT, SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6 µs
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

1.6A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

3.6 µs

10 µA @ 800 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

W1411LC320

IXYS

DIODE GEN PURP 3.2KV 1411A W4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3200 V
Current - Average Rectified (Io): 1411A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 3200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C

封装: -

Request a Quote

3200 V

1411A

2 V @ 2870 A

Standard Recovery >500ns, > 200mA (Io)

-

30 mA @ 3200 V

-

Clamp On

DO-200AB, B-PUK

W4

-55°C ~ 160°C

S5MB_R1_00601

Panjit International Inc.

SURFACE GENERAL PURPOSE RECTIFIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存9,600

1000 V

5A

1.15 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1 kV

35pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

B5819WSL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323FL
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

40 V

1A

600 mV @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 40 V

120pF @ 4V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323FL

-65°C ~ 125°C

UES1003-TR

Microchip Technology

DIODE GEN PURP 150V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

150 V

1A

975 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

-

Through Hole

A, Axial

-55°C ~ 175°C

V12P6HM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

库存17,580

60 V

12A

610 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.9 mA @ 60 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

US2MFL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

1000 V

2A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

28pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SMA-FL)

-50°C ~ 150°C

VS-8ETH03SHM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 8A TO262AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

300 V

8A

1.25 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

20 µA @ 300 V

-

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262AA

-55°C ~ 175°C

BAX12-BK

Central Semiconductor Corp

DIODE AVALANCHE 90V 400MA DO35

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

90 V

400mA

1.25 V @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 90 V

35pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 200°C

US3GB-HF

Comchip Technology

DIODE GP 400V 3A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

-

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

SDS120J002C3-ISATH

Luminus Devices Inc.

DIODE 1200V-2A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 11A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 8 µA @ 1.2 kV
Capacitance @ Vr, F: 165pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

11A

1.5 V @ 2 A

No Recovery Time > 500mA (Io)

0 ns

8 µA @ 1.2 kV

165pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C

BAT54T-7-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 10V, 1MHz

Surface Mount

SOT-523

-65°C ~ 150°C

SK15BH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

1A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BAS21QAZ

Nexperia USA Inc.

DIODE GP 250V 330MA DFN1010D-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250 V
Current - Average Rectified (Io): 330mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: 150°C (Max)

封装: -

库存43,596

250 V

330mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

2pF @ 0V, 1MHz

Surface Mount

3-XDFN Exposed Pad

DFN1010D-3

150°C (Max)