页 311 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
V8P10HE3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 680mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存3,616	100V	8A	680mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	70µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
VS-305U250	Vishay Semiconductor Diodes Division	MOD DIODE 2500V 300A DO-205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-205AB, DO-9, Stud	库存7,856	2500V	300A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
FR85DR05	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 85A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存6,416	200V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
S70Y	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存4,112	1600V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
MUR440 B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 4A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-201AD, Axial	库存4,272	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
RG 2	Sanken	DIODE GEN PURP 400V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 500µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存6,704	400V	1.2A	1.8V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	500µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
RK 34V	Sanken	DIODE SCHOTTKY 40V 2.5A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存6,448	40V	2.5A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Through Hole	Axial	-	-40°C ~ 150°C
SF44G R0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存5,984	200V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
NRVUA110VT3G	ON Semiconductor	DIODE ULT FAST 1A 100V SMA2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AC, SMA	库存7,216	100V	2A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 100V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
SFT15GHA0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存3,216	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS29L RVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存7,920	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1B-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存5,664	100V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
STPS5045SG-TR	STMicroelectronics	DIODE SCHOTTKY 45V 50A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 610mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 360µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 200°C (Max)	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存21,660	45V	50A	610mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	360µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	200°C (Max)
STPS3L40UF	STMicroelectronics	DIODE SCHOTTKY 40V 3A SMBFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBflat Operating Temperature - Junction: 150°C (Max)	封装: DO-221AA, SMB Flat Leads	库存6,176	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBflat	150°C (Max)
JANS1N6761-1	Microchip Technology	DIODE SCHOTTKY 100V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO041, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	100 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO041, Axial	DO-41	-65°C ~ 150°C
NTE5925	NTE Electronics, Inc	DIODE GEN PURP 600V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 63 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	20A	1.23 V @ 63 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
1N5393GP-TP	Micro Commercial Co	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	1.5A	1.4 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
S5DLHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	5A	1.15 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 200 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
TRS6A65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARBIDE 650V 6A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 650 V Capacitance @ Vr, F: 22pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: 175°C (Max)	封装: -	库存147	650 V	6A	1.6 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	22pF @ 650V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F-2L	175°C (Max)
UFR3010R	Microchip Technology	DIODE GEN PURP 100V 30A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 140pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	100 V	30A	975 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	140pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	175°C (Max)
GI754	NTE Electronics, Inc	DIODE GEN PURP 400V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	6A	900 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 400 V	150pF @ 4V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
BA159G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存30,000	1000 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CR70U-040	Central Semiconductor Corp	DIODE GEN PURP 400V 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 25 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	70A	1.3 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 175°C
S3D06065L	SMC Diode Solutions	DIODE SCHOTTKY 650V 24A 5DFN Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 24A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 650 V Capacitance @ Vr, F: 382pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存1,092	650 V	24A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 650 V	382pF @ 0V, 1MHz	Surface Mount	4-VSFN Exposed Pad	5-DFN (8x8)	-55°C ~ 175°C
SMBT1191LT1	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VS-MBRB1045TRRHM3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	10A	840 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	600pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
TSS83L45	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存205,836	45 V	3A	560 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	220pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
VS-HFA08TB60-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存9,222	600 V	8A	2.1 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
1N5623-TR	Microchip Technology	DIODE GEN PURP 1KV 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 500 nA @ 1 V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1 V	15pF @ 12V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
SVT20100U_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 20A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	20A	660 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C

V8P10HE3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存3,616

100V

8A

680mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

70µA @ 100V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

VS-305U250

Vishay Semiconductor Diodes Division

MOD DIODE 2500V 300A DO-205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-205AB, DO-9, Stud

库存7,856

2500V

300A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

FR85DR05

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 85A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存6,416

200V

85A

1.4V @ 85A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

S70Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存4,112

1600V

70A

1.1V @ 70A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

MUR440 B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 4A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-201AD, Axial

库存4,272

400V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 175°C

RG 2

Sanken

DIODE GEN PURP 400V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 500µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存6,704

400V

1.2A

1.8V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

500µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

RK 34V

Sanken

DIODE SCHOTTKY 40V 2.5A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存6,448

40V

2.5A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Through Hole

Axial

-

-40°C ~ 150°C

SF44G R0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 200V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存5,984

200V

4A

1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

NRVUA110VT3G

ON Semiconductor

DIODE ULT FAST 1A 100V SMA2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AC, SMA

库存7,216

100V

2A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 100V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

SFT15GHA0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存3,216

300V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SS29L RVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存7,920

90V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

ES1B-E3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存5,664

100V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 100V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

STPS5045SG-TR

STMicroelectronics

DIODE SCHOTTKY 45V 50A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 360µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 200°C (Max)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存21,660

45V

50A

610mV @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

-

360µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

200°C (Max)

STPS3L40UF

STMicroelectronics

DIODE SCHOTTKY 40V 3A SMBFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)

封装: DO-221AA, SMB Flat Leads

库存6,176

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

DO-221AA, SMB Flat Leads

SMBflat

150°C (Max)

JANS1N6761-1

Microchip Technology

DIODE SCHOTTKY 100V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO041, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

100 V

1A

690 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO041, Axial

DO-41

-65°C ~ 150°C

NTE5925

NTE Electronics, Inc

DIODE GEN PURP 600V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 63 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

20A

1.23 V @ 63 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

1N5393GP-TP

Micro Commercial Co

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

1.5A

1.4 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

S5DLHE3-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

5A

1.15 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 200 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

TRS6A65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARBIDE 650V 6A TO220F

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)

封装: -

库存147

650 V

6A

1.6 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 650 V

22pF @ 650V, 1MHz

Through Hole

TO-220-2 Full Pack

TO-220F-2L

175°C (Max)

UFR3010R

Microchip Technology

DIODE GEN PURP 100V 30A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: 175°C (Max)

封装: -

Request a Quote

100 V

30A

975 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

-

140pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

175°C (Max)

GI754

NTE Electronics, Inc

DIODE GEN PURP 400V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

6A

900 mV @ 6 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

5 µA @ 400 V

150pF @ 4V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

BA159G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存30,000

1000 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

CR70U-040

Central Semiconductor Corp

DIODE GEN PURP 400V 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

70A

1.3 V @ 70 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

25 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 175°C

S3D06065L

SMC Diode Solutions

DIODE SCHOTTKY 650V 24A 5DFN

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 24A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 µA @ 650 V
Capacitance @ Vr, F: 382pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存1,092

650 V

24A

1.7 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

3 µA @ 650 V

382pF @ 0V, 1MHz

Surface Mount

4-VSFN Exposed Pad

5-DFN (8x8)

-55°C ~ 175°C

SMBT1191LT1

onsemi

SS SOT23 GP XSTR SPCL TR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

VS-MBRB1045TRRHM3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

10A

840 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

600pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

TSS83L45

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 3A SOD128

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存205,836

45 V

3A

560 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

220pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

VS-HFA08TB60-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存9,222

600 V

8A

2.1 V @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

55 ns

5 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

1N5623-TR

Microchip Technology

DIODE GEN PURP 1KV 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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1000 V

1A

1.6 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

500 nA @ 1 V

15pF @ 12V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

SVT20100U_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 20A TO277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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100 V

20A

660 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-55°C ~ 150°C