页 285 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DGS10-025A	IXYS	DIODE SCHOTTKY 250V 12A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.3mA @ 250V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存2,352	250V	12A	1.5V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.3mA @ 250V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
121NQ035	Vishay Semiconductor Diodes Division	DIODE MODULE 35V 120A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 35V Capacitance @ Vr, F: 5200pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	封装: D-67 HALF-PAK	库存6,368	35V	120A	650mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 35V	5200pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
S300E	GeneSiC Semiconductor	DIODE GEN PURP 300V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AB, DO-9, Stud	库存4,672	300V	300A	1.2V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
VS-T110HF80	Vishay Semiconductor Diodes Division	DIODE MODULE 800V 110A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	封装: D-55 T-Module	库存2,336	800V	110A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 800V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-85HFLR100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存6,944	1000V	85A	1.75V @ 266.9A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
1N5194UR	Microsemi Corporation	DIODE GEN PURP 70V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 70V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AA (Glass)	库存6,080	70V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 70V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
VS-12TQ035-N3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15A 35V TO-220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存3,184	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	900pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR2050CTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 20A 50V TO220AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,952	-	-	-	-	-	-	-	-	-	-	-
BYWF29-200HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2 Full Pack, Isolated Tab	库存4,704	200V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
CDBQR43	Comchip Technology	DIODE SCHOTTKY 30V 200MA 0402 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402/SOD-923F Operating Temperature - Junction: 125°C (Max)	封装: 0402 (1005 Metric)	库存4,608	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	0402 (1005 Metric)	0402/SOD-923F	125°C (Max)
SRT12HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 125°C	封装: T-18, Axial	库存4,064	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
1N4001GHR0G	TSC America Inc.	DIODE, 1A, 50V, AEC-Q101, DO-204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,584	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GL41G-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AB, MELF (Glass)	库存36,000	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
MUR480-TP	Micro Commercial Co	DIODE GEN PURP 800V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存3,312	800V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS33	Fairchild/ON Semiconductor	DIODE SCHOTTKY 30V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存916,500	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
FSL24	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, LOW VF, 2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: eSGA (SOD-123FL) Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存11,748	40 V	2A	430 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	120pF @ 4V, 1MHz	Surface Mount	SOD-123F	eSGA (SOD-123FL)	-55°C ~ 125°C
MR504	Solid State Inc.	DIODE GEN PURP 400V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	3A	1.1 V @ 9.4 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	-	Through Hole	Axial	Axial	-65°C ~ 175°C
D711N65TXPSA1	Infineon Technologies	DIODE GEN PURP 6.5KV 1070A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6500 V Current - Average Rectified (Io): 1070A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 6500 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	封装: -	Request a Quote	6500 V	1070A	1.9 V @ 1200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 6500 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 160°C
CD214A-B340R	Bourns Inc.	DIODE SCHOTTKY 40V 3A 2SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存265,257	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	300pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-55°C ~ 125°C
IV1D12005O2	Inventchip	DIODE SIL CARB 1.2KV 17A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 17A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Capacitance @ Vr, F: 320pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存492	1200 V	17A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	320pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
VS-HFA25TB60SL-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 25A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	25A	2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	20 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SNSR20F30WCNXT5G	onsemi	0603 FC SCHOTTKY DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RFN1VWM2STFTR	Rohm Semiconductor	DIODE GEN PURP 200V 1A PMDE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	封装: -	库存5,163	200 V	1A	930 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
1N5402T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	3A	950 mV @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
TST10L200CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 10A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存6	200 V	10A	900 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
BAS40WS_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存26,820	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	5pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
ERT3DAF_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 3A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
P2500X	Diotec Semiconductor	DIODE P600 1800V 25A 175C Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1800 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1800 V	-	Through Hole	P600, Axial	P600	-55°C ~ 175°C
VS-8ETH06S-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存11,865	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
AS1A	Diodes Incorporated	DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.3 µs	5 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C

DGS10-025A

IXYS

DIODE SCHOTTKY 250V 12A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.3mA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存2,352

250V

12A

1.5V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.3mA @ 250V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

121NQ035

Vishay Semiconductor Diodes Division

DIODE MODULE 35V 120A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 35V
Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

封装: D-67 HALF-PAK

库存6,368

35V

120A

650mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 35V

5200pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

D-67

-

S300E

GeneSiC Semiconductor

DIODE GEN PURP 300V 300A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AB, DO-9, Stud

库存4,672

300V

300A

1.2V @ 300A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

VS-T110HF80

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 110A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

封装: D-55 T-Module

库存2,336

800V

110A

-

Standard Recovery >500ns, > 200mA (Io)

-

20mA @ 800V

-

Chassis Mount

D-55 T-Module

D-55

-

VS-85HFLR100S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 85A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存6,944

1000V

85A

1.75V @ 266.9A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

100µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

1N5194UR

Microsemi Corporation

DIODE GEN PURP 70V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25nA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AA (Glass)

库存6,080

70V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

25nA @ 70V

-

Surface Mount

DO-213AA (Glass)

DO-213AA

-65°C ~ 175°C

VS-12TQ035-N3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15A 35V TO-220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存3,184

35V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

900pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

MBR2050CTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 20A 50V TO220AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,952

-

BYWF29-200HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2 Full Pack, Isolated Tab

库存4,704

200V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

CDBQR43

Comchip Technology

DIODE SCHOTTKY 30V 200MA 0402

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402/SOD-923F
Operating Temperature - Junction: 125°C (Max)

封装: 0402 (1005 Metric)

库存4,608

30V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

10pF @ 1V, 1MHz

Surface Mount

0402 (1005 Metric)

0402/SOD-923F

125°C (Max)

SRT12HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 125°C

封装: T-18, Axial

库存4,064

20V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 125°C

1N4001GHR0G

TSC America Inc.

DIODE, 1A, 50V, AEC-Q101, DO-204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,584

50V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

GL41G-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

库存36,000

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

MUR480-TP

Micro Commercial Co

DIODE GEN PURP 800V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存3,312

800V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SS33

Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存916,500

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

FSL24

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, LOW VF, 2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: eSGA (SOD-123FL)
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存11,748

40 V

2A

430 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

120pF @ 4V, 1MHz

Surface Mount

SOD-123F

eSGA (SOD-123FL)

-55°C ~ 125°C

MR504

Solid State Inc.

DIODE GEN PURP 400V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

3A

1.1 V @ 9.4 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 400 V

-

Through Hole

Axial

-65°C ~ 175°C

D711N65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 1070A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 6500 V
Current - Average Rectified (Io): 1070A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

封装: -

Request a Quote

6500 V

1070A

1.9 V @ 1200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 6500 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 160°C

CD214A-B340R

Bourns Inc.

DIODE SCHOTTKY 40V 3A 2SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存265,257

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

300pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-55°C ~ 125°C

IV1D12005O2

Inventchip

DIODE SIL CARB 1.2KV 17A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 17A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Capacitance @ Vr, F: 320pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存492

1200 V

17A

1.8 V @ 5 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 1200 V

320pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

VS-HFA25TB60SL-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 25A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

600 V

25A

2 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

20 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

SNSR20F30WCNXT5G

onsemi

0603 FC SCHOTTKY DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

RFN1VWM2STFTR

Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

封装: -

库存5,163

200 V

1A

930 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 200 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

1N5402T-R

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

3A

950 mV @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

TST10L200CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 10A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存6

200 V

10A

900 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

BAS40WS_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存26,820

40 V

200mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

5pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 150°C

ERT3DAF_R1_00001

Panjit International Inc.

DIODE GEN PURP 200V 3A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 200 V

50pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

P2500X

Diotec Semiconductor

DIODE P600 1800V 25A 175C

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1800 V

25A

1.1 V @ 25 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 1800 V

-

Through Hole

P600, Axial

P600

-55°C ~ 175°C

VS-8ETH06S-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

库存11,865

600 V

8A

2.4 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

50 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

AS1A

Diodes Incorporated

DIODE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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50 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.3 µs

5 µA @ 600 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C