页 274 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR490E	ON Semiconductor	DIODE GEN PURP 900V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 900V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AA, DO-27, Axial	库存6,048	900V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	25µA @ 900V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
DL4004-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-213AB, MELF	库存4,480	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
R7012803XXUA	Powerex Inc.	DIODE GEN PURP 2.8KV 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 2800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-200AA, A-PUK	库存3,968	2800V	300A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 2800V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
S400KR	GeneSiC Semiconductor	DIODE GEN REV 800V 400A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AB, DO-9, Stud	库存5,728	800V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
VS-1N3671A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AA, DO-4, Stud	库存6,416	800V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	800µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
USB260-M3/5BT	Vishay Semiconductor Diodes Division	DIODE 2A 600V 30NS DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存3,568	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
GP10B-4002-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	封装: DO-204AL, DO-41, Axial	库存5,648	100V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
SS115L MHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,992	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1GL MTG	TSC America Inc.	DIODE, 1A, 400V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-219AB	库存4,416	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RB520S-30 RSG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 125°C	封装: SC-79, SOD-523	库存3,632	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 125°C
EGP30K	Fairchild/ON Semiconductor	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AD, Axial	库存5,600	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	75pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
1PS74SB23,165	Nexperia USA Inc.	DIODE SCHOTTKY 25V 1A 6TSOP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 25V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP Operating Temperature - Junction: 125°C (Max)	封装: SC-74, SOT-457	库存4,160	25V	1A (DC)	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 25V	100pF @ 4V, 1MHz	Surface Mount	SC-74, SOT-457	6-TSOP	125°C (Max)
FFSD1065B	onsemi	DIODE SIL CARB 650V 13.5A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 13.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 424pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存12,522	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C
TRS4E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 4A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 55 µA @ 650 V Capacitance @ Vr, F: 263pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	封装: -	库存1,155	650 V	4A	1.35 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	263pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
1N486A	Microchip Technology	ZENER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CS2M-E3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1000 V	2A	1.2 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2.1 µs	5 µA @ 1000 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RHRP890	Harris Corporation	DIODE AVALANCHE 900V 8A TO220AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 900 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Current - Reverse Leakage @ Vr: 100 µA @ 900 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	900 V	8A	3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	100 µA @ 900 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
S3G-AU_R1_000A1	Panjit International Inc.	DIODE GEN PURP 400V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 53pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	53pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
PU2DLW	Taiwan Semiconductor Corporation	25NS, 2A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 33pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存60,000	200 V	2A	930 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	33pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
SDS065J004D3-ISARH	Luminus Devices Inc.	DIODE 650V-4A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 12 µA @ 650 V Capacitance @ Vr, F: 213pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	14A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	12 µA @ 650 V	213pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2L	-55°C ~ 175°C
PCFFS2065AF	onsemi	DIODE SIL CARBIDE 650V 20A DIE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	650 V	20A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	-	Surface Mount	Die	Die	175°C (Max)
PU6JB	Taiwan Semiconductor Corporation	25NS, 6A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存36,000	600 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 600 V	48pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
DSC06065D1	Diodes Incorporated	DIODE SIL CARBIDE 650V 6A TO252 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 226pF @ 100mV, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	226pF @ 100mV, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (Type WX)	-55°C ~ 175°C
NRVUS2JA	onsemi	DIODE GEN PURP 600V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N3903R	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 63 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	400 V	20A	1.4 V @ 63 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	50 µA @ 400 V	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
TSF20H100C-S	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	10A	790 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
1N60A	NTE Electronics, Inc	DIODE GEN PURP 30V 150MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 65 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 85°C	封装: -	Request a Quote	30 V	150mA	1 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	65 µA @ 10 V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 85°C
R38100	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
TRS2E65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 2A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	650 V	2A	1.6 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	8.7pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
USD535	Microchip Technology	DIODE SCHOTTKY 35V 75A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 35 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	35 V	75A	680 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 35 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	175°C (Max)

MUR490E

ON Semiconductor

DIODE GEN PURP 900V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AA, DO-27, Axial

库存6,048

900V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

25µA @ 900V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

DL4004-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-213AB, MELF

库存4,480

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

-

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 150°C

R7012803XXUA

Powerex Inc.

DIODE GEN PURP 2.8KV 300A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2800V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 2800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-200AA, A-PUK

库存3,968

2800V

300A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 2800V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 200°C

S400KR

GeneSiC Semiconductor

DIODE GEN REV 800V 400A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AB, DO-9, Stud

库存5,728

800V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

VS-1N3671A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AA, DO-4, Stud

库存6,416

800V

12A

1.35V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

800µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 200°C

USB260-M3/5BT

Vishay Semiconductor Diodes Division

DIODE 2A 600V 30NS DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存3,568

600V

2A

1.6V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 600V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

GP10B-4002-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

封装: DO-204AL, DO-41, Axial

库存5,648

100V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

SS115L MHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,992

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

S1GL MTG

TSC America Inc.

DIODE, 1A, 400V, SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-219AB

库存4,416

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 400V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

RB520S-30 RSG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C

封装: SC-79, SOD-523

库存3,632

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

SC-79, SOD-523

SOD-523F

-55°C ~ 125°C

EGP30K

Fairchild/ON Semiconductor

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

库存5,600

800V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

75pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

1PS74SB23,165

Nexperia USA Inc.

DIODE SCHOTTKY 25V 1A 6TSOP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 25V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Operating Temperature - Junction: 125°C (Max)

封装: SC-74, SOT-457

库存4,160

25V

1A (DC)

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 25V

100pF @ 4V, 1MHz

Surface Mount

SC-74, SOT-457

6-TSOP

125°C (Max)

FFSD1065B

onsemi

DIODE SIL CARB 650V 13.5A DPAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 13.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 424pF @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存12,522

650 V

13.5A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

424pF @ 1V, 100kHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 175°C

TRS4E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 4A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

封装: -

库存1,155

650 V

4A

1.35 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

55 µA @ 650 V

263pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C

1N486A

Microchip Technology

ZENER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

CS2M-E3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.1 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

1000 V

2A

1.2 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

2.1 µs

5 µA @ 1000 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RHRP890

Harris Corporation

DIODE AVALANCHE 900V 8A TO220AC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 900 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Current - Reverse Leakage @ Vr: 100 µA @ 900 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

900 V

8A

3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

65 ns

100 µA @ 900 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

S3G-AU_R1_000A1

Panjit International Inc.

DIODE GEN PURP 400V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 53pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

53pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

PU2DLW

Taiwan Semiconductor Corporation

25NS, 2A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存60,000

200 V

2A

930 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

33pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 175°C

SDS065J004D3-ISARH

Luminus Devices Inc.

DIODE 650V-4A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 14A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

14A

1.5 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

12 µA @ 650 V

213pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252-2L

-55°C ~ 175°C

PCFFS2065AF

onsemi

DIODE SIL CARBIDE 650V 20A DIE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)

封装: -

Request a Quote

650 V

20A

1.75 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

-

Surface Mount

Die

175°C (Max)

PU6JB

Taiwan Semiconductor Corporation

25NS, 6A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存36,000

600 V

6A

1.7 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 600 V

48pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

DSC06065D1

Diodes Incorporated

DIODE SIL CARBIDE 650V 6A TO252

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 226pF @ 100mV, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

226pF @ 100mV, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (Type WX)

-55°C ~ 175°C

NRVUS2JA

onsemi

DIODE GEN PURP 600V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

600 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 600 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N3903R

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 63 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

400 V

20A

1.4 V @ 63 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

50 µA @ 400 V

150pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

TSF20H100C-S

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 10A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

10A

790 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 100 V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

1N60A

NTE Electronics, Inc

DIODE GEN PURP 30V 150MA DO7

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 65 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 85°C

封装: -

Request a Quote

30 V

150mA

1 V @ 5 mA

Small Signal =< 200mA (Io), Any Speed

-

65 µA @ 10 V

-

Through Hole

DO-204AA, DO-7, Axial

DO-7

-65°C ~ 85°C

R38100

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

TRS2E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 2A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)

封装: -

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650 V

2A

1.6 V @ 2 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 650 V

8.7pF @ 650V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C (Max)

USD535

Microchip Technology

DIODE SCHOTTKY 35V 75A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 35 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)

封装: -

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35 V

75A

680 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

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20 mA @ 35 V

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Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

175°C (Max)