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60V|4.3A|1.25W
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MOSFET 2N-CH 60V 4.3A 8-SOIC
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-SOIC (0.154", 3.90mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
2,539pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ZXMN6A09DN8TA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 4.3A | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 8.2A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 24.2nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1407pF @ 40V | |
| Power - Max | 1.25W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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Datasheet & Documents
zxmn6a09dn8ta.pdf
PDF Document · 8 pages
