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30V|2.9A|1.13W
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MOSFET 2N-CH 30V 2.9A 8MLP
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-VDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
115pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ZXMN3AM832TA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.9A | |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V | |
| Power - Max | 1.13W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Supplier Device Package | 8-MLP (3x2) |
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Datasheet & Documents
zxmn3am832ta.pdf
PDF Document · 7 pages
