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20V|5.9A|1.8W
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MOSFET 2N-CH 20V 5.9A 8SOIC
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-SOIC (0.154", 3.90mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
403pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ZXMN2A04DN8TC from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5.9A | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.9A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V | |
| Power - Max | 1.8W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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Datasheet & Documents
zxmn2a04dn8tc.pdf
PDF Document · 7 pages
