Heisener Electronics
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ZXMN2A02X8TC

20V|6.2A (Ta)|1.1W (Ta)
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MOSFET N-CH 20V 6.2A 8-MSOP

Specifications

Brand
Diodes Incorporated
Package
8-MSOP
Packaging
—
Weight
—

Total Inventory

136pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ZXMN2A02X8TC from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MSOP
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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Datasheet & Documents

zxmn2a02x8tc.pdf

PDF Document · 7 pages

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