Heisener Electronics
BOM

ZXMN2A01FTA

20V|1.9A (Ta)|625mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 20V 1.9A SOT23-3

Specifications

Brand
Diodes Incorporated
Package
SOT-23-3
Packaging
—
Weight
—

Total Inventory

183,899pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ZXMN2A01FTA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs120mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds303pF @ 15V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

zxmn2a01ftc.pdf

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