Heisener Electronics
BOM

ZXMHC6A07N8TC

60V|1.39A, 1.28A|870mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N/2P-CH 60V 8-SOIC

Specifications

Brand
Diodes Incorporated
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

15,938pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ZXMHC6A07N8TC from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N and 2 P-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.39A, 1.28A
Rds On (Max) @ Id, Vgs250mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V
Power - Max870mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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Datasheet & Documents

zxmhc6a07n8tc.pdf

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