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30V|2.9A, 2.1A|1.7W
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MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-WDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
4,940pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ZXMC3AMCTA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A | |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V | |
| Power - Max | 1.7W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-WDFN Exposed Pad | |
| Supplier Device Package | 8-DFN (3x2) |
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Datasheet & Documents
zxmc3amcta.pdf
PDF Document · 11 pages
