Heisener Electronics
BOM

ZXMC3A18DN8TA

30V|5.8A, 4.8A|1.8W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 30V 8-SOIC

Specifications

Brand
Diodes Incorporated
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

417pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ZXMC3A18DN8TA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.8A, 4.8A
Rds On (Max) @ Id, Vgs25mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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Datasheet & Documents

zxmc3a18dn8ta.pdf

PDF Document · 12 pages

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