Heisener Electronics
BOM

ZXMC3A17DN8TA

30V|4.1A, 3.4A|1.25W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 30V 8SOIC

Specifications

Brand
Diodes Incorporated
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

4,492pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ZXMC3A17DN8TA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.1A, 3.4A
Rds On (Max) @ Id, Vgs50mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Datasheet & Documents

zxmc3a17dn8tc.pdf

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