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100V|140mA (Ta)|625mW (Ta)
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MOSFET P-CH 100V 0.14A TO92-3
Specifications
- Brand
- Diodes Incorporated
- Package
- TO-92-3
- Packaging
- —
- Weight
- —
Total Inventory
2,038pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ZVP3310A from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 140mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 150mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 625mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-92-3 | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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Datasheet & Documents
zvp3310astz.pdf
PDF Document · 3 pages
