Heisener Electronics
BOM

WNSCM80120RQ

1200 V|45A (Ta)|270W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

WNSCM80120R/TO247-4L/STANDARD MA

Specifications

Brand
WeEn Semiconductors
Package
TO-247-4L
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how WNSCM80120RQ from WeEn Semiconductors fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerWeEn Semiconductors
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs59 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 1000 V
FET Feature-
Power Dissipation (Max)270W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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