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WNSC5D08650D6J

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Part Number

WNSC5D08650D6J

Manufacturer

WeEn Semiconductors

Description

DIODE SIL CARBIDE 650V 8A DPAK

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

WNSC5D08650D6J PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:0 pcs

运送服务：

WNSC5D08650D6J 规格

Capacitance @ Vr, F
267pF @ 1V, 1MHz
Current - Average Rectified (Io)
8A
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Diode Type
SiC (Silicon Carbide) Schottky
Manufacturer
WeEn Semiconductors
Mounting Type
Surface Mount
Operating Temperature - Junction
-55°C ~ 175°C
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Reverse Recovery Time (trr)
0 ns
Series
-
Speed
No Recovery Time > 500mA (Io)
Supplier Device Package
DPAK
Voltage - DC Reverse (Vr) (Max)
650 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A

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