Heisener Electronics
BOM

WNSC2D04650TJ

650 V|4A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE SIL CARBIDE 650V 4A 5DFN

Specifications

Brand
WeEn Semiconductors
Package
4-VSFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

31,605pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how WNSC2D04650TJ from WeEn Semiconductors fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerWeEn Semiconductors
Series-
Diode TypeSiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 4 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr20 µA @ 650 V
Capacitance @ Vr, F125pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / Case4-VSFN Exposed Pad
Supplier Device Package5-DFN (8x8)
Operating Temperature - Junction175°C

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