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1800 V|10815A
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DIODE GEN PURP 1.8KV 10815A W112
Specifications
- Brand
- IXYS
- Package
- DO-200AE
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how W108CED180 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1800 V | |
| Current - Average Rectified (Io) | 10815A | |
| Voltage - Forward (Vf) (Max) @ If | - | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | - | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | DO-200AE | |
| Supplier Device Package | W112 | |
| Operating Temperature - Junction | - |
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