Heisener Electronics
BOM

VWM200-01P

100V|210A|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 6N-CH 100V 210A V2

Specifications

Brand
IXYS
Package
V2-PAK
Packaging
—
Weight
—

Total Inventory

148pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how VWM200-01P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C210A
Rds On (Max) @ Id, Vgs5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseV2-PAK
Supplier Device PackageV2-PAK

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Datasheet & Documents

vwm200-01p.pdf

PDF Document · 2 pages

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