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20V|100mA|120mW
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MOSFET N/P-CH 20V 0.1A VMT6
Specifications
- Brand
- Rohm Semiconductor
- Package
- 6-SMD, Flat Leads
- Packaging
- —
- Weight
- —
Total Inventory
24,690pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how VT6M1T2CR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate, 1.2V Drive | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA | |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V | |
| Power - Max | 120mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD, Flat Leads | |
| Supplier Device Package | VMT6 |
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