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3200V|600A
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DIODE GEN PURP 3.2KV 600A B8
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- B-8
- Packaging
- —
- Weight
- —
Total Inventory
216pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how VS-SD600R32PC from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 3200V | |
| Current - Average Rectified (Io) | 600A | |
| Voltage - Forward (Vf) (Max) @ If | 1.44V @ 1500A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 35mA @ 3200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Chassis, Stud Mount | |
| Package / Case | B-8 | |
| Supplier Device Package | B-8 | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Datasheet & Documents
vs-sd600n28pc.pdf
PDF Document · 8 pages
