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1200V|182A|520W
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IGBT 1200V 182A 520W INT-A-PAK
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- INT-A-Pak
- Packaging
- —
- Weight
- —
Total Inventory
197pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how VS-GA100TS120UPBF from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| IGBT Type | - | |
| Configuration | Half Bridge | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 182A | |
| Power - Max | 520W | |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A | |
| Current - Collector Cutoff (Max) | 1mA | |
| Input Capacitance (Cies) @ Vce | 18.67nF @ 30V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | INT-A-Pak | |
| Supplier Device Package | INT-A-PAK |
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Datasheet & Documents
vs-ga100ts120upbf.pdf
PDF Document · 10 pages
