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30V|600mA|2W
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MOSFET 4P-CH 30V 0.6A 14DIP
Specifications
- Brand
- Vishay Siliconix
- Package
- -
- Packaging
- —
- Weight
- —
Total Inventory
320pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how VQ2001P from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| FET Type | 4 P-Channel | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 600mA | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 12V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 15V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | - | |
| Package / Case | - | |
| Supplier Device Package | - |
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Datasheet & Documents
vq2001p-2.pdf
PDF Document · 5 pages
